Global Power Technologies Group 정류기-싱글

시리즈

재설정

다이오드 유형

재설정

전압-DC 역방향 (Vr) (최대)

재설정

전류-평균 정류 (Io)

재설정

전압-순방향 (Vf) (최대) @ If

재설정

속도

재설정

역 복구 시간 (trr)

재설정

전류-역방향 누설 @ Vr

재설정

커패시턴스 @ Vr, F

재설정

장착 유형

재설정

패키지 / 케이스

재설정

공급자 장치 패키지

재설정

작동 온도-접합

재설정

필터보기

필터 재설정

필터 적용

카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글

제조업체Global Power Technologies Group

기록 65

페이지 2/3

부품 번호	제조업체	설명	재고 있음	시리즈	다이오드 유형	전압-DC 역방향 (Vr) (최대)	전류-평균 정류 (Io)	전압-순방향 (Vf) (최대) @ If	속도	역 복구 시간 (trr)	전류-역방향 누설 @ Vr	커패시턴스 @ Vr, F	장착 유형	패키지 / 케이스	공급자 장치 패키지	작동 온도-접합
GDP08S120A	Global Power Technologies Group	DIODE SCHOTTKY 1.2KV 8A TO220-2	5,472	Amp+™	Silicon Carbide Schottky	1200V	8A	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	477pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 135°C
GDP12S060A	Global Power Technologies Group	DIODE SCHOTTKY 600V 12A TO220-2	6,732	Amp+™	Silicon Carbide Schottky	600V	12A (DC)	1.7V @ 12A	No Recovery Time > 500mA (Io)	0ns	100µA @ 600V	487pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 135°C
GDP12S060D	Global Power Technologies Group	DIODE SCHOTTKY 600V 12A TO263-2	4,482	Amp+™	Silicon Carbide Schottky	600V	12A (DC)	1.7V @ 12A	No Recovery Time > 500mA (Io)	0ns	100µA @ 600V	487pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-2	-55°C ~ 135°C
GDP15S120A	Global Power Technologies Group	DIODE SCHOTTKY 1.2KV 15A TO220-2	2,034	Amp+™	Silicon Carbide Schottky	1200V	15A (DC)	1.7V @ 15A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	895pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 135°C
GDP15S120B	Global Power Technologies Group	DIODE SCHOTTKY 1200V 15A TO247-2	3,582	Amp+™	Silicon Carbide Schottky	1200V	15A (DC)	1.7V @ 15A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	895pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 135°C
GDP24P060B	Global Power Technologies Group	DIODE SCHOTTKY 600V 24A TO247-2	2,016	Amp+™	Silicon Carbide Schottky	600V	24A (DC)	1.7V @ 24A	No Recovery Time > 500mA (Io)	0ns	100µA @ 600V	973pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 135°C
GDP30P120B	Global Power Technologies Group	DIODE SCHOTTKY 1200V 81A TO247-2	8,622	Amp+™	Silicon Carbide Schottky	1200V	81A	1.7V @ 30A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	1790pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 135°C
GDP30S120B	Global Power Technologies Group	DIODE SCHOTTKY 1.2KV 30A TO247-2	7,002	Amp+™	Silicon Carbide Schottky	1200V	30A (DC)	1.7V @ 30A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	1790pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 135°C
GDP36Z060B	Global Power Technologies Group	DIODE SCHOTTKY 600V 36A TO247-2	4,482	Amp+™	Silicon Carbide Schottky	600V	36A (DC)	1.7V @ 36A	No Recovery Time > 500mA (Io)	0ns	100µA @ 600V	1460pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 135°C
GDP50P120B	Global Power Technologies Group	DIODE SCHOTTKY 1.2KV 50A TO247-2	7,146	Amp+™	Silicon Carbide Schottky	1200V	50A (DC)	1.7V @ 50A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	2984pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 135°C
GDP60Z120E	Global Power Technologies Group	DIODE SCHOTT 1.2KV 60A TO247-2	7,614	Amp+™	Silicon Carbide Schottky	1200V	60A (DC)	1.7V @ 60A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	3581pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 135°C
GP2D005A120A	Global Power Technologies Group	DIODE SCHOTTKY 1.2KV 5A TO220-2	5,706	Amp+™	Silicon Carbide Schottky	1200V	5A (DC)	1.8V @ 5A	No Recovery Time > 500mA (Io)	0ns	10µA @ 1200V	317pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
GP2D005A120C	Global Power Technologies Group	DIODE SCHOTTKY 1.2KV 5A DPAK-2	3,168	Amp+™	Silicon Carbide Schottky	1200V	5A	1.8V @ 5A	No Recovery Time > 500mA (Io)	0ns	10µA @ 1200V	317pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-2L (DPAK)	-55°C ~ 175°C
GP2D005A170B	Global Power Technologies Group	DIODE SCHOTTKY 1700V 5A TO247-2	4,860	Amp+™	Silicon Carbide Schottky	1700V	5A (DC)	1.75V @ 5A	No Recovery Time > 500mA (Io)	0ns	10µA @ 1700V	406pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GP2D006A065A	Global Power Technologies Group	DIODE SCHOTTKY 650V 6A TO220-2	225	Amp+™	Silicon Carbide Schottky	650V	6A	1.65V @ 6A	No Recovery Time > 500mA (Io)	0ns	60µA @ 650V	316pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
GP2D006A065C	Global Power Technologies Group	DIODE SCHOTTKY 650V 6A TO252-2	8,460	Amp+™	Silicon Carbide Schottky	650V	6A (DC)	1.65V @ 6A	No Recovery Time > 500mA (Io)	0ns	60µA @ 650V	316pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-2L (DPAK)	-55°C ~ 175°C
GP2D010A120A	Global Power Technologies Group	DIODE SCHOTTKY 1.2KV 10A TO220-2	8,586	Amp+™	Silicon Carbide Schottky	1200V	10A	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	20µA @ 1200V	635pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
GP2D010A120B	Global Power Technologies Group	DIODE SCHOTTKY 1.2KV 10A TO247-2	5,976	Amp+™	Silicon Carbide Schottky	1200V	10A	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	20µA @ 1200V	635pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GP2D010A120C	Global Power Technologies Group	DIODE SCHOTTKY 1.2KV 10A TO252-2	4,824	Amp+™	Silicon Carbide Schottky	1200V	10A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	20µA @ 1200V	635pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-2L (DPAK)	-55°C ~ 175°C
GP2D010A170B	Global Power Technologies Group	DIODE SCHOTTKY 1.7KV 10A TO247-2	3,330	Amp+™	Silicon Carbide Schottky	1700V	10A	1.75V @ 10A	No Recovery Time > 500mA (Io)	0ns	20µA @ 1700V	812pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GP2D020A120B	Global Power Technologies Group	DIODE SCHOTTKY 1.2KV 20A TO247-2	231	Amp+™	Silicon Carbide Schottky	1200V	20A (DC)	1.8V @ 20A	No Recovery Time > 500mA (Io)	0ns	40µA @ 1200V	1270pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GP2D020A170B	Global Power Technologies Group	DIODE SCHOTTKY 1.7KV 20A TO247-2	7,938	Amp+™	Silicon Carbide Schottky	1700V	20A (DC)	1.75V @ 20A	No Recovery Time > 500mA (Io)	0ns	40µA @ 1700V	1624pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GP2D030A120B	Global Power Technologies Group	DIODE SCHOTTKY 1.2KV 30A TO247-2	5,724	Amp+™	Silicon Carbide Schottky	1200V	30A (DC)	1.8V @ 30A	No Recovery Time > 500mA (Io)	0ns	60µA @ 1200V	1905pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GP2D015A120B	Global Power Technologies Group	DIODE SCHOTTKY 1200V 15A TO247-2	5,742	Amp+™	Silicon Carbide Schottky	1200V	15A (DC)	1.8V @ 15A	No Recovery Time > 500mA (Io)	0ns	30µA @ 1200V	54pF @ 1200V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GP2D010A065A	Global Power Technologies Group	DIODE SCHOTTKY 650V 30A TO220-2	1,559	Amp+™	Silicon Carbide Schottky	650V	30A (DC)	1.65V @ 10A	No Recovery Time > 500mA (Io)	-	100µA @ 650V	527pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
GP2D010A065C	Global Power Technologies Group	DIODE SCHOTTKY 650V 30A TO252	3,726	Amp+™	Silicon Carbide Schottky	650V	30A (DC)	1.65V @ 10A	No Recovery Time > 500mA (Io)	-	100µA @ 650V	527pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	-55°C ~ 175°C
GP2D020A065B	Global Power Technologies Group	DIODE SCHOTTKY 650V 58A TO247-2	5,605	Amp+™	Silicon Carbide Schottky	650V	58A (DC)	1.65V @ 20A	No Recovery Time > 500mA (Io)	-	200µA @ 650V	1054pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GP2D060A120B	Global Power Technologies Group	DIODE SCHOTKY 1.2KV 182A TO247-2	8,406	Amp+™	Silicon Carbide Schottky	1200V	182A (DC)	1.8V @ 60A	No Recovery Time > 500mA (Io)	-	500µA @ 1200V	3809pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GP3D050A060B	Global Power Technologies Group	DIODE SCHOTTKY 600V 50A TO247-2	8,118	*	-	-	-	-	-	-	-	-	-	-	-	-
GP3D050A120B	Global Power Technologies Group	DIODE SCHOTTKY 1.2KV 50A TO247-2	5,292	*	-	-	-	-	-	-	-	-	-	-	-	-

«
‹
1
2 (current)
3
›
»

Send Message

Certifications

Global Power Technologies Group 정류기-싱글

자원

지원

Social Media

Need Help?
Send Message