Infineon Technologies 정류기-싱글
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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
제조업체Infineon Technologies
기록 720
페이지 12/24
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
DIODE GEN PURP 4.2KV 4870A |
6,012 |
|
- | Standard | 4200V | 4870A | 1.27V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4200V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
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Infineon Technologies |
DIODE GEN PURP 4.5KV 1740A |
4,842 |
|
- | Standard | 4500V | 1740A | 4.3V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 4500V | - | Chassis Mount | DO-200AE | - | 0°C ~ 140°C |
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Infineon Technologies |
DIODE GEN PURP 4.5KV 1080A |
7,884 |
|
- | Standard | 4500V | 1080A | 3.5V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 140mA @ 4500V | - | Chassis Mount | DO-200AC, K-PUK | - | -40°C ~ 125°C |
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Infineon Technologies |
DIODE GEN PURP 6.8KV 4090A |
5,742 |
|
- | Standard | 6800V | 4090A | 1.7V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 6800V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
|
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Infineon Technologies |
DIODE GEN PURP 4.5KV 1710A |
4,446 |
|
- | Standard | 4500V | 1710A | 4.2V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 4500V | - | Chassis Mount | DO-200AE | - | 0°C ~ 140°C |
|
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Infineon Technologies |
DIODE GEN PURP 9KV 1790A |
3,582 |
|
- | Standard | 9000V | 1790A | 5.5V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 9000V | - | Chassis Mount | DO-200AE | - | 0°C ~ 140°C |
|
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|
Infineon Technologies |
DIODE GEN PURP 4.5KV 1630A |
4,968 |
|
- | Standard | 4500V | 1630A | 2.6V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4500V | - | Chassis Mount | DO-200AD | - | -40°C ~ 140°C |
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Infineon Technologies |
DIODE GEN PURP 6.8KV 3910A |
8,910 |
|
- | Standard | 6800V | 3910A | 1.7V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 6800V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
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Infineon Technologies |
DIODE GEN PURP 8.5KV 3040A |
6,822 |
|
- | Standard | 8500V | 3040A | - | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 8500V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
|
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Infineon Technologies |
DIODE GEN PURP 9KV 3040A |
5,256 |
|
- | Standard | 9000V | 3040A | - | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 9000V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
|
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Infineon Technologies |
HIGH POWER THYR / DIO |
2,142 |
|
- | Standard | 4200V | 4870A | - | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4200V | - | Chassis Mount | DO-200AE | BG-D12035K-1 | 160°C (Max) |
|
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|
Infineon Technologies |
DIODE GEN PURP 4.5KV 2380A |
5,148 |
|
- | Standard | 4500V | 2380A | 2.5V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 4500V | - | Chassis Mount | DO-200AE | - | 0°C ~ 140°C |
|
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Infineon Technologies |
DIODE GEN PURP 4.5KV 1530A |
7,902 |
|
- | Standard | 4500V | 1530A | 2.5V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 80mA @ 4500V | - | Chassis Mount | DO-200AC, K-PUK | - | -40°C ~ 140°C |
|
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Infineon Technologies |
DIODE GEN PURP 4.5KV 2210A |
4,734 |
|
- | Standard | 4500V | 2210A | 3.6V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 4500V | - | Chassis Mount | DO-200AE | - | 0°C ~ 140°C |
|
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Infineon Technologies |
DIODE GEN PURP 4.5KV 1630A |
5,454 |
|
- | Standard | 4500V | 1630A | 2.6V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4500V | - | Chassis Mount | DO-200AD | - | -40°C ~ 140°C |
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Infineon Technologies |
DIODE GEN PURP D10026K-1 |
5,094 |
|
- | Standard | - | 1720A | - | Standard Recovery >500ns, > 200mA (Io) | - | 200mA @ 4500V | - | Chassis Mount | DO-200AD | BG-D10026K-1 | -40°C ~ 140°C |
|
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Infineon Technologies |
DIODE GEN PURP D12026K-1 |
4,500 |
|
- | Standard | - | 2160A | - | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 9000V | - | Chassis Mount | DO-200AE | BG-D10026K-1 | 0°C ~ 140°C |
|
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Infineon Technologies |
DIODE GEN PURP 5KV 8010A |
4,194 |
|
- | Standard | 5000V | 8010A | 1.3V @ 6000A | Standard Recovery >500ns, > 200mA (Io) | - | 400mA @ 5000V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
|
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Infineon Technologies |
DIODE GEN PURP 400V 1A SOT89 |
7,128 |
|
- | Standard | 400V | 1A (DC) | 1.6V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1µs | 1µA @ 400V | 10pF @ 0V, 1MHz | Surface Mount | TO-243AA | PG-SOT89 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO220AB |
8,946 |
|
- | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 300pF @ 0V, 1MHz | Through Hole | TO-220-3 | P-TO220AB | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 4A TO220-2 |
2,484 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 4A (DC) | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 150pF @ 0V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO220-2 |
3,436 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 300pF @ 0V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 300V 10A TO220-2 |
3,402 |
|
CoolSiC™+ | Silicon Carbide Schottky | 300V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 300V | 600pF @ 0V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 12A TO220-2 |
8,028 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | 450pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 80V 200MA SC79-2 |
8,694 |
|
- | Standard | 80V | 200mA (DC) | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | 150°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 80V 200MA SCD80-2 |
5,166 |
|
- | Standard | 80V | 200mA (DC) | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SC-80 | SCD-80 | 150°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 80V 250MA SOT323 |
7,434 |
|
- | Standard | 80V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SC-70, SOT-323 | PG-SOT323-3 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 45V 750MA SC79-2 |
8,712 |
|
- | Schottky | 45V | 750mA (DC) | 600mV @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 45V | 10pF @ 10V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 45V 750MA SC79-2 |
6,786 |
|
- | Schottky | 45V | 750mA (DC) | 600mV @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 45V | 10pF @ 10V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 70V 70MA SCD80-2 |
6,462 |
|
- | Schottky | 70V | 70mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 100ps | 100nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | SC-80 | SCD-80 | -55°C ~ 125°C |