Infineon Technologies 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Infineon Technologies
기록 6,749
페이지 214/225
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 560V 16A TO-220AB |
7,380 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 16A (Tc) | 10V | 280mOhm @ 10A, 10V | 3.9V @ 675µA | 66nC @ 10V | ±20V | 1600pF @ 25V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 40V 409A D2PAK |
8,136 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | ±20V | 14240pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK |
5,004 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 6V, 10V | 0.75mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | ±20V | 13975pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 40V 195A D2PAK |
3,436 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 1.6mOhm @ 100A, 10V | 3.9V @ 250µA | 324nC @ 10V | ±20V | 10820pF @ 25V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 800V 3.9A TO251-3 |
8,208 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3.9A (Tc) | 10V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23nC @ 10V | ±20V | 570pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 800V 1.9A TO251-3 |
6,318 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 1.9A (Tc) | 10V | 2.8Ohm @ 1.1A, 10V | 3.9V @ 120µA | 12nC @ 10V | ±20V | 290pF @ 100V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 800V 5.7A TO251-3 |
4,194 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 5.7A (Tc) | 10V | 950mOhm @ 3.6A, 10V | 3.9V @ 250µA | 31nC @ 10V | ±20V | 785pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 800V 1.9A TO252-3 |
3,528 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 1.9A (Tc) | 10V | 2.8Ohm @ 1.1A, 10V | 3.9V @ 120µA | 12nC @ 10V | ±20V | 290pF @ 100V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V 3.9A TO252-3 |
5,202 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3.9A (Tc) | 10V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23nC @ 10V | ±20V | 570pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V 5.7A TO252-3 |
3,528 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 5.7A (Tc) | 10V | 950mOhm @ 3.6A, 10V | 3.9V @ 250µA | 31nC @ 10V | ±20V | 785pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 70A PQFN 5X6 |
3,762 |
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FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 30A (Ta), 70A (Tc) | 4.5V, 10V | 2.4mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | ±20V | 2000pF @ 13V | - | 3.4W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 210A D2PAK |
4,860 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6540pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK |
4,122 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | 3V @ 250µA | 60nC @ 5V | ±16V | 2880pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 89A D2PAK |
7,668 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 87A (Tc) | 6V, 10V | 7.2mOhm @ 52A, 10V | 3.7V @ 100µA | 126nC @ 10V | ±20V | 4430pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 56A D2PAK |
2,970 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 56A (Tc) | 6V, 10V | 11.2mOhm @ 35A, 10V | 3.7V @ 100µA | 89nC @ 10V | ±20V | 3107pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 240A D2PAK |
3,580 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 240A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 428nC @ 10V | ±20V | 13970pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 75V 183A D2PAK |
7,308 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 197A (Tc) | 6V, 10V | 3.05mOhm @ 100A, 10V | 3.7V @ 150µA | 270nC @ 10V | ±20V | 10130pF @ 25V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 75V 183A D2PAK |
5,454 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 183A (Tc) | 6V, 10V | 3.5mOhm @ 100A, 10V | 3.7V @ 250µA | 270nC @ 10V | ±20V | 10150pF @ 25V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 104A D2PAK |
7,884 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 85A (Tc) | 6V, 10V | 6.7mOhm @ 51A, 10V | 3.7V @ 100µA | 130nC @ 10V | ±20V | 4440pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 76A D2PAK |
2,088 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 76A (Tc) | 6V, 10V | 8.4mOhm @ 46A, 10V | 3.7V @ 100µA | 109nC @ 10V | ±20V | 4020pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 44A 8PQFN |
8,964 |
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FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 44A (Ta), 260A (Tc) | 4.5V, 10V | 1.1mOhm @ 50A, 10V | 2.1V @ 100µA | 74nC @ 10V | ±20V | 4620pF @ 13V | - | 3.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 150V 86A D2PAK |
7,290 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 86A (Tc) | 10V | 14.7mOhm @ 34A, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 4460pF @ 50V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 30V 160A D2PAK |
6,210 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 160A (Tc) | 10V | 1.95mOhm @ 148A, 10V | 2.35V @ 150µA | 83nC @ 4.5V | ±20V | 8020pF @ 25V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 15A |
5,904 |
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FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Ta), 93A (Tc) | 10V | 6.5mOhm @ 56A, 10V | 3.6V @ 150µA | 54nC @ 10V | ±20V | 2160pF @ 50V | - | 2.8W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
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Infineon Technologies |
MOSFET N-CH 100V 18A |
3,472 |
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FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 18A (Ta), 105A (Tc) | 10V | 6mOhm @ 50A, 10V | 3.9V @ 150µA | 50nC @ 10V | ±20V | 2116pF @ 50V | - | 3.8W (Ta), 132W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 15A |
3,546 |
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FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Ta), 80A (Tc) | 10V | 8mOhm @ 48A, 10V | 3.6V @ 100µA | 39nC @ 10V | ±20V | 1685pF @ 50V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 800V TO-220-3 |
8,100 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 800V | 3.6A (Tc) | 10V | 950mOhm @ 3.6A, 10V | 3.9V @ 250µA | 31nC @ 10V | ±20V | 785pF @ 100V | - | 32W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 800V TO-220-3 |
7,254 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 800V | 6.8A (Tc) | - | 310mOhm @ 11A, 10V | 3.9V @ 1mA | 91nC @ 10V | - | 2320pF @ 100V | - | 35W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V TO-251-3 |
7,902 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 650V | 3.1A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | 225pF @ 100V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 600V TO-252-3 |
4,716 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 2.3A (Tc) | 10V | 2.1Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7nC @ 10V | ±20V | 140pF @ 100V | - | 22W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |