Infineon Technologies 트랜지스터-FET, MOSFET-단일

시리즈

재설정

FET 유형

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기술

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드레인-소스 전압 (Vdss)

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전류-25 ° C에서 연속 드레인 (Id)

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드라이브 전압 (최대 Rds On, 최소 Rds On)

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Rds On (최대) @ Id, Vgs

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Vgs (th) (최대) @ Id

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게이트 충전 (Qg) (최대) @ Vgs

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Vgs (최대)

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입력 커패시턴스 (Ciss) (최대) @ Vds

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FET 기능

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전력 손실 (최대)

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작동 온도

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장착 유형

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공급자 장치 패키지

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패키지 / 케이스

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필터보기

필터 재설정

필터 적용

카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일

제조업체Infineon Technologies

기록 6,749

페이지 220/225

부품 번호	제조업체	설명	재고 있음	시리즈	FET 유형	기술	드레인-소스 전압 (Vdss)	전류-25 ° C에서 연속 드레인 (Id)	드라이브 전압 (최대 Rds On, 최소 Rds On)	Rds On (최대) @ Id, Vgs	Vgs (th) (최대) @ Id	게이트 충전 (Qg) (최대) @ Vgs	Vgs (최대)	입력 커패시턴스 (Ciss) (최대) @ Vds	FET 기능	전력 손실 (최대)	작동 온도	장착 유형	공급자 장치 패키지	패키지 / 케이스
IPP80P04P405AKSA1	Infineon Technologies	MOSFET P-CH TO220-3	8,334	Automotive, AEC-Q101, OptiMOS™	P-Channel	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	5.2mOhm @ 80A, 10V	4V @ 250µA	151nC @ 10V	±20V	10300pF @ 25V	-	125W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
64-9149PBF	Infineon Technologies	MOSFET N-CH 60V DIRECTFETL8	5,598	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
64-9150PBF	Infineon Technologies	MOSFET N-CH 40V DIRECTFETL8	2,448	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
94-2355PBF	Infineon Technologies	MOSFET N-CH 100V TO-220AB	4,554	-	-	-	-	-	4V, 10V	-	-	-	±16V	-	-	-	-	-	-	-
94-2503PBF	Infineon Technologies	MOSFET N-CH 100V 57A D2PAK	5,418	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
94-4849PBF	Infineon Technologies	MOSFET P-CH 55V 11A DPAK	8,478	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC3306EB	Infineon Technologies	MOSFET N-CH 60V DIE ON WAFER	8,694	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC4010EB	Infineon Technologies	MOSFET N-CH 100V DIE ON WAFER	3,672	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC4115EB	Infineon Technologies	MOSFET N-CH 150V DIE ON WAFER	5,274	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC4310EF	Infineon Technologies	MOSFET N-CH 100V DIE ON FILM	5,166	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRLC4030EB	Infineon Technologies	MOSFET N-CH 100V DIE ON WAFER	3,580	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUIRFN7110TR	Infineon Technologies	MOSFET NCH 100V 58A PQFN	7,524	Automotive, AEC-Q101, HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	58A (Tc)	10V	14.5mOhm @ 35A, 10V	4V @ 100µA	74nC @ 10V	±20V	3050pF @ 25V	-	4.3W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
IRFH7182TRPBF	Infineon Technologies	MOSFET NCH 100V 23A PQFN	4,266	FASTIRFET™, HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	23A (Ta), 157A (Tc)	10V	3.9mOhm @ 50A, 10V	3.6V @ 250µA	74nC @ 10V	±20V	3120pF @ 50V	-	4W (Ta), 195W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
AUIRFP4310Z	Infineon Technologies	MOSFET NCH 100V 128A TO247AC	5,976	Automotive, AEC-Q101, HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	128A (Tc)	10V	6mOhm @ 77A, 10V	4V @ 150µA	188nC @ 10V	±20V	7120pF @ 50V	-	278W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
62-0095PBF	Infineon Technologies	MOSFET 2N-CH 20V 10A/12A 8-SOIC	4,482	-	N-Channel	MOSFET (Metal Oxide)	20V	10A (Ta), 12A (Tc)	10V	13.4mOhm @ 10A, 10V	2.55V @ 250µA	11nC @ 4.5V	-	900pF @ 10V	-	2W	-55°C ~ 150°C (TJ)	Surface Mount	-	-
62-0136PBF	Infineon Technologies	MOSFET N-CH 30V 19A 8-SOIC	2,466	-	N-Channel	MOSFET (Metal Oxide)	30V	19A (Ta)	10V	4.5mOhm @ 19A, 10V	2.25V @ 250µA	44nC @ 4.5V	±20V	3710pF @ 15V	-	2.5W	-55°C ~ 150°C (TA)	Surface Mount	-	-
IPD60R380E6BTMA1	Infineon Technologies	MOSFET NCH 600V 10.6A TO252	2,304	CoolMOS™	N-Channel	MOSFET (Metal Oxide)	600V	10.6A (Tc)	10V	380mOhm @ 3.8A, 10V	3.5V @ 300µA	32nC @ 10V	±20V	700pF @ 100V	Super Junction	83W (Tc)	-55°C ~ 155°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPU60R1K4C6BKMA1	Infineon Technologies	MOSFET NCH 600V 3.2A TO251	5,004	CoolMOS™	N-Channel	MOSFET (Metal Oxide)	600V	3.2A (Tc)	10V	1.4Ohm @ 1.1A, 10V	3.5V @ 90µA	9.4nC @ 10V	±20V	200pF @ 100V	Super Junction	28.4W (Tc)	-55°C ~ 155°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
IPD60R380E6ATMA2	Infineon Technologies	MOSFET NCH 600V 10.6A TO252	3,348	CoolMOS™	N-Channel	MOSFET (Metal Oxide)	600V	10.6A (Tc)	10V	380mOhm @ 3.8A, 10V	3.5V @ 300µA	32nC @ 10V	±20V	700pF @ 100V	Super Junction	83W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPU80R2K8CEAKMA1	Infineon Technologies	MOSFET N-CH 800V TO251-3	5,562	CoolMOS™	N-Channel	MOSFET (Metal Oxide)	800V	1.9A (Tc)	10V	2.8Ohm @ 1.1A, 10V	3.9V @ 120µA	12nC @ 10V	±20V	290pF @ 100V	-	42W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
IPU80R1K4CEAKMA1	Infineon Technologies	MOSFET N-CH 800V TO251-3	7,344	CoolMOS™	N-Channel	MOSFET (Metal Oxide)	800V	3.9A (Tc)	10V	1.4Ohm @ 2.3A, 10V	3.9V @ 240µA	23nC @ 10V	±20V	570pF @ 100V	-	63W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
64-0055PBF	Infineon Technologies	MOSFET N-CH TO-220AB	7,542	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	160A (Tc)	10V	4.2mOhm @ 75A, 10V	4V @ 150µA	120nC @ 10V	±20V	4520pF @ 50V	-	230W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	-	-
AUXMOS20956STR	Infineon Technologies	MOSFET N-CH 16SOIC	5,760	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUXS20956S	Infineon Technologies	MOSFET N-CH 16SOIC	6,624	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC3004EB	Infineon Technologies	MOSFET N-CH WAFER	8,982	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC3006EB	Infineon Technologies	MOSFET N-CH WAFER	8,712	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC3107EB	Infineon Technologies	MOSFET N-CH WAFER	4,572	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC3205ZEB	Infineon Technologies	MOSFET N-CH WAFER	2,538	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC3206EB	Infineon Technologies	MOSFET N-CH WAFER	3,168	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC3710ZEB	Infineon Technologies	MOSFET N-CH WAFER	4,086	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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Infineon Technologies 트랜지스터-FET, MOSFET-단일

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