Infineon Technologies 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Infineon Technologies
기록 6,749
페이지 67/225
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 750V 7.4A SOT223 |
7,668 |
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- | N-Channel | MOSFET (Metal Oxide) | 750V | 7.4A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 150µA | 14.9nC @ 10V | ±20V | 328pF @ 100V | - | 5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
TRANSISTOR P-CH BARE DIE |
3,762 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8PQFN |
3,762 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 9mOhm @ 20A, 10V | 2.35V @ 25µA | 15nC @ 10V | ±20V | 1180pF @ 10V | - | 2.7W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerTDFN |
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Infineon Technologies |
CONSUMER |
3,078 |
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Infineon Technologies |
MOSFET N-CH 30V 40A TDSON-8 |
3,780 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta), 40A (Tc) | 4.5V, 10V | 9.1mOhm @ 20A, 10V | 2V @ 250µA | 23nC @ 10V | ±20V | 1700pF @ 15V | - | 2.1W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 16A 8PQFN |
3,006 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 16A (Ta) | 4.5V, 10V | 7.7mOhm @ 20A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1040pF @ 10V | - | 3W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 1A SAWN ON FOIL |
5,940 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 1A (Tj) | 4.5V | 100mOhm @ 2A, 4.5V | 2.1V @ 12µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Infineon Technologies |
MOSFET N-CH 100V 1.4A 6TSOP |
6,804 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 1.4A (Ta) | 4.5V, 10V | 460mOhm @ 1.26A, 10V | 1.8V @ 100µA | 4nC @ 5V | ±20V | 152.7pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 100V 2A 6TSOP |
3,906 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 2A (Ta) | 10V | 230mOhm @ 2A, 10V | 4V @ 218µA | 9.3nC @ 10V | ±20V | 265pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 60V 2.9A SOT223 |
7,470 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 2.9A (Tj) | 10V | 120mOhm @ 2.9A, 10V | 4V @ 20µA | 9.3nC @ 7V | ±20V | 340pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET NCH 700V 5.4A TO251 |
3,490 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 700V | 5.4A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | 225pF @ 100V | Super Junction | 53W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO251 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
LV POWER MOS |
4,986 |
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Infineon Technologies |
MOSFET N-CHAN SAWED WAFER |
3,472 |
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- | N-Channel | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 30V 90A 5X6 PQFN |
8,874 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 90A (Tc) | 4.5V, 10V | 4.1mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | ±20V | 2380pF @ 10V | - | 3.6W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 2A SAWN ON FOIL |
4,212 |
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OptiMOS™ 3 | N-Channel | MOSFET (Metal Oxide) | 30V | - | 10V | 50mOhm @ 2A, 10V | 2.2V @ 250µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Infineon Technologies |
MOSFET N-CH 800V 1.5A DPAK |
6,462 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 1.5A (Tc) | 10V | 4.5Ohm @ 400mA, 10V | 3.5V @ 200µA | 4nC @ 10V | ±20V | 80pF @ 500V | Super Junction | 13W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 18A TDSON-8 |
3,834 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 5.3A (Ta), 18A (Tc) | 6V, 10V | 44mOhm @ 12A, 10V | 3.5V @ 12µA | 10.8nC @ 10V | ±20V | 810pF @ 50V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CHANNEL 30V 13A 8TDSON |
3,582 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 7mOhm @ 5A, 10V | 2V @ 250µA | 7nC @ 4.5V | ±20V | 890pF @ 15V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-25 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 600V 4.3A TO-251-3 |
7,668 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 4.3A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 130µA | 13nC @ 10V | ±20V | 280pF @ 100V | - | 61W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
CONSUMER |
5,886 |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
7,380 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 8.7mOhm @ 14A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1020pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 9.8A 8SOIC |
5,886 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 9.8A (Ta) | 4.5V, 10V | 17.5mOhm @ 9.8A, 10V | 2.4V @ 25µA | 41nC @ 10V | ±20V | 1270pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 16A 8PQFN |
3,454 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 6.6mOhm @ 20A, 10V | 2.35V @ 25µA | 20nC @ 10V | ±20V | 1450pF @ 25V | - | 2.7W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 650V TO-252 |
7,794 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.2A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 200µA | 15.3nC @ 10V | ±20V | 328pF @ 100V | Super Junction | 68W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 10A PQFN |
5,562 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 3.2A (Ta), 20A (Tc) | 10V | 115mOhm @ 6.3A, 10V | 4V @ 35µA | 26nC @ 10V | ±20V | 760pF @ 50V | - | 2.8W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3x3) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
3,294 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 4.3A (Tc) | 10V | 400mOhm @ 4.3A, 10V | 4V @ 166µA | 6.7nC @ 10V | ±20V | 260pF @ 30V | - | 19W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V SOT223-4 |
2,664 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 1.9A (Ta) | 10V | 250mOhm @ 1.9A, 10V | 4V @ 270µA | 10.8nC @ 10V | ±20V | 420pF @ 30V | - | 1.8W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
2,574 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 8.5mOhm @ 14A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1040pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
CONSUMER |
6,750 |
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Infineon Technologies |
CONSUMER |
8,550 |
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