Micron Technology Inc. 기억

시리즈

재설정

메모리 유형

재설정

메모리 포맷

재설정

기술

재설정

메모리 크기

재설정

메모리 인터페이스

재설정

시계 주파수

재설정

쓰기주기 시간-단어, 페이지

재설정

접근 시간

재설정

전압-공급

재설정

작동 온도

재설정

장착 유형

재설정

패키지 / 케이스

재설정

공급자 장치 패키지

재설정

필터보기

필터 재설정

필터 적용

카테고리반도체 / 메모리 IC / 기억

제조업체Micron Technology Inc.

기록 8,604

페이지 238/287

부품 번호	제조업체	설명	재고 있음	시리즈	메모리 유형	메모리 포맷	기술	메모리 크기	메모리 인터페이스	시계 주파수	쓰기주기 시간-단어, 페이지	접근 시간	전압-공급	작동 온도	장착 유형	패키지 / 케이스	공급자 장치 패키지
MT40A512M8RH-075E AIT:B TR	Micron Technology Inc.	IC DRAM 4G PARALLEL 78FBGA	4,842	-	Volatile	DRAM	SDRAM - DDR4	4Gb (512M x 8)	Parallel	1.33GHz	-	-	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (9x10.5)
MT41K1G16DGA-125:A TR	Micron Technology Inc.	IC DRAM 16G PARALLEL 96FBGA	8,136	-	Volatile	DRAM	SDRAM - DDR3L	16Gb (1G x 16)	Parallel	800MHz	-	13.75ns	1.283V ~ 1.45V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (9.5x14)
EDFP112A3PB-GD-F-D TR	Micron Technology Inc.	IC DRAM 24G PARALLEL 800MHZ	4,860	-	Volatile	DRAM	SDRAM - Mobile LPDDR3	24Gb (192M x 128)	Parallel	800MHz	-	-	1.14V ~ 1.95V	-30°C ~ 85°C (TA)	-	-	-
EDFP112A3PB-GD-F-R TR	Micron Technology Inc.	IC DRAM 24G PARALLEL 800MHZ	8,676	-	Volatile	DRAM	SDRAM - Mobile LPDDR3	24Gb (192M x 128)	Parallel	800MHz	-	-	1.14V ~ 1.95V	-30°C ~ 85°C (TA)	-	-	-
EDFP112A3PB-JD-F-D TR	Micron Technology Inc.	IC DRAM 24G PARALLEL 933MHZ	2,844	-	Volatile	DRAM	SDRAM - Mobile LPDDR3	24Gb (192M x 128)	Parallel	933MHz	-	-	1.14V ~ 1.95V	-30°C ~ 85°C (TA)	-	-	-
EDFP112A3PB-JD-F-R TR	Micron Technology Inc.	IC DRAM 24G PARALLEL 933MHZ	8,856	-	Volatile	DRAM	SDRAM - Mobile LPDDR3	24Gb (192M x 128)	Parallel	933MHz	-	-	1.14V ~ 1.95V	-30°C ~ 85°C (TA)	-	-	-
MTFC4GMDEA-4M IT TR	Micron Technology Inc.	IC FLASH 32G MMC 153VFBGA	3,366	e•MMC™	Non-Volatile	FLASH	FLASH - NAND	32Gb (4G x 8)	MMC	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	153-WFBGA	153-WFBGA (11.5x13)
EDFP112A3PB-GDTJ-F-R	Micron Technology Inc.	IC DRAM 24G PARALLEL 800MHZ	5,310	-	Volatile	DRAM	SDRAM - Mobile LPDDR3	24Gb (192M x 128)	Parallel	800MHz	-	-	1.14V ~ 1.95V	-30°C ~ 105°C (TC)	-	-	-
EDFP112A3PB-GD-F-D	Micron Technology Inc.	IC DRAM 24G PARALLEL 800MHZ	6,642	-	Volatile	DRAM	SDRAM - Mobile LPDDR3	24Gb (192M x 128)	Parallel	800MHz	-	-	1.14V ~ 1.95V	-30°C ~ 85°C (TA)	-	-	-
EDFP112A3PB-GD-F-R	Micron Technology Inc.	IC DRAM 24G PARALLEL 800MHZ	8,766	-	Volatile	DRAM	SDRAM - Mobile LPDDR3	24Gb (192M x 128)	Parallel	800MHz	-	-	1.14V ~ 1.95V	-30°C ~ 85°C (TA)	-	-	-
EDFP112A3PB-JD-F-D	Micron Technology Inc.	IC DRAM 24G PARALLEL 933MHZ	7,776	-	Volatile	DRAM	SDRAM - Mobile LPDDR3	24Gb (192M x 128)	Parallel	933MHz	-	-	1.14V ~ 1.95V	-30°C ~ 85°C (TA)	-	-	-
EDFP112A3PB-JD-F-R	Micron Technology Inc.	IC DRAM 24G PARALLEL 933MHZ	6,768	-	Volatile	DRAM	SDRAM - Mobile LPDDR3	24Gb (192M x 128)	Parallel	933MHz	-	-	1.14V ~ 1.95V	-30°C ~ 85°C (TA)	-	-	-
MT42L16M32D1U67MWC2	Micron Technology Inc.	IC LPDDR2 SDRAM 1GBIT	3,436	*	-	-	-	-	-	-	-	-	-	-	-	-	-
MT42L32M16D1U67MWC1	Micron Technology Inc.	LPDDR2	4,554	*	-	-	-	-	-	-	-	-	-	-	-	-	-
MT42L32M16D1U67MWC2	Micron Technology Inc.	LPDDR2	8,334	*	-	-	-	-	-	-	-	-	-	-	-	-	-
MT53B256M32D1GZ-062 AIT:B	Micron Technology Inc.	IC DRAM 8G 1600MHZ	8,766	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	1600MHz	-	-	1.1V	-40°C ~ 95°C (TC)	Surface Mount	200-WFBGA	200-WFBGA (11x14.5)
MT53B256M32D1GZ-062 WT:B	Micron Technology Inc.	IC DRAM 8G 1600MHZ FBGA	5,346	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	Surface Mount	200-WFBGA	200-WFBGA (11x14.5)
MT53B512M32D2GZ-062 AIT:B	Micron Technology Inc.	IC DRAM 16G 1600MHZ	6,822	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	-	1600MHz	-	-	1.1V	-40°C ~ 95°C (TC)	Surface Mount	200-WFBGA	200-WFBGA (11x14.5)
MT53B512M32D2GZ-062 WT:B	Micron Technology Inc.	IC DRAM 16G 1600MHZ FBGA	4,824	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	Surface Mount	200-WFBGA	200-WFBGA (11x14.5)
MT29F128G08EBCBBJ4-6:B	Micron Technology Inc.	IC FLASH 128G PARALLEL 166MHZ	6,930	-	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	166MHz	-	-	2.7V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	-	132-VBGA (12x18)
MT29F512G08EMCBBJ5-10:B	Micron Technology Inc.	IC FLASH 512G PARALLEL 100MHZ	4,950	-	Non-Volatile	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	100MHz	-	-	2.7V ~ 3.6V	0°C ~ 70°C (TA)	-	-	-
MT29F128G08EBEBBB95A3WC1	Micron Technology Inc.	IC FLASH 128G PARALLEL	4,140	-	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	-	-	-	2.7V ~ 3.6V	0°C ~ 70°C (TA)	-	-	-
MT29F128G08EBEBBB95A3WC1-M	Micron Technology Inc.	IC FLASH 128G PARALLEL	6,228	-	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	-	-	-	2.7V ~ 3.6V	0°C ~ 70°C (TA)	-	-	-
MT29F128G08EBEBBWP:B	Micron Technology Inc.	IC FLASH 128G PARALLEL	2,160	-	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	-	-	-	2.7V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
MT29F256G08EECBBJ4-6:B	Micron Technology Inc.	IC FLASH 256G PARALLEL 167MHZ	6,696	-	Non-Volatile	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	167MHz	-	-	2.7V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	-	132-VBGA (12x18)
MT29F256G08EFEBBWP:B	Micron Technology Inc.	IC FLASH 256G PARALLEL 48TSOP	6,228	-	Non-Volatile	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	-	-	-	2.7V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
MT29F512G08EKCBBJ5-6:B	Micron Technology Inc.	NAND FLASH	7,038	*	-	-	-	-	-	-	-	-	-	-	-	-	-
MT29F512G08EMCBBJ5-6:B	Micron Technology Inc.	IC FLASH 512G PARALLEL 167MHZ	6,444	-	Non-Volatile	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	167MHz	-	-	2.7V ~ 3.6V	0°C ~ 70°C (TA)	-	-	-
MT29F512G08EMCBBJ5-6:B.001	Micron Technology Inc.	IC FLASH 512G PARALLEL 167MHZ	3,348	-	Non-Volatile	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	167MHz	-	-	2.7V ~ 3.6V	0°C ~ 70°C (TA)	-	-	-
MT38W201DAA033JZZI.X68	Micron Technology Inc.	MCP 5MX16 PLASTIC 2.0V IND	2,412	*	-	-	-	-	-	-	-	-	-	-	-	-	-

«
‹
1
...
235
236
237
238 (current)
239
240
241
...
287
›
»

Send Message

Certifications

Micron Technology Inc. 기억

자원

지원

Social Media

Need Help?
Send Message