ON Semiconductor 정류기-싱글
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필터보기
필터 재설정
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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
제조업체ON Semiconductor
기록 2,271
페이지 23/76
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
DIODE GEN PURP 400V 60A TO247 |
9,864 |
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- | Standard | 400V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 100µA @ 400V | - | Through Hole | TO-247-3 | TO-247 | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 650V 15A TO220-2 |
16,872 |
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- | Silicon Carbide Schottky | 650V | 15A (DC) | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 575pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
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ON Semiconductor |
650V 10A SIC SBD |
23,856 |
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- | Silicon Carbide Schottky | 650V | 10A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 575pF @ 1V, 100kHz | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | -55°C ~ 175°C |
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ON Semiconductor |
1200V 10A AUTO SIC SBD |
18,960 |
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Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 21A (DC) | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 612pF @ 1V, 100kHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK-3 (TO-263) | -55°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 650V 15A TO220-2 |
16,188 |
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- | Silicon Carbide Schottky | 650V | 15A (DC) | 1.75V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 665pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 1.2KV 8A TO220-2 |
13,692 |
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- | Silicon Carbide Schottky | 1200V | 8A (DC) | 1.75V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 1200V | 538pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
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ON Semiconductor |
SIC DIODE 650V |
11,124 |
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Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 20A | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 866pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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ON Semiconductor |
650V 20A SIC SBD GEN1.5 |
9,168 |
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Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 421pF @ 1V, 100kHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 1.2KV 10A TO220-2 |
2,532 |
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- | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.75V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 1200V | 612pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 650V 16A TO220-2 |
14,688 |
|
- | Silicon Carbide Schottky | 650V | 16A (DC) | 1.75V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 887pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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ON Semiconductor |
650V 16A SIC SBD |
9,324 |
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- | Silicon Carbide Schottky | 650V | 23A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 887pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 650V 25A TO220-2 |
15,396 |
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- | Silicon Carbide Schottky | 650V | 25A (DC) | 1.75V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 1085pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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ON Semiconductor |
650V 20A SIC SBD |
22,428 |
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- | Silicon Carbide Schottky | 650V | 20A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 1085pF @ 1V, 100kHz | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | -55°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 1.2KV 15A TO220-2 |
19,344 |
|
- | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.75V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 1200V | 936pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
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ON Semiconductor |
650V 20A SIC SBD |
11,004 |
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- | Silicon Carbide Schottky | 650V | 25A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 1085pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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ON Semiconductor |
1200V 15A SIC SBD |
8,028 |
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- | Silicon Carbide Schottky | 1200V | 26A (DC) | 1.75V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 936pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 650V 30A TO220-2 |
14,244 |
|
- | Silicon Carbide Schottky | 650V | 30A (DC) | 1.75V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 650V | 1705pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
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ON Semiconductor |
650V 30A SIC SBD |
9,720 |
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- | Silicon Carbide Schottky | 650V | 26A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 1705pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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ON Semiconductor |
SIC DIODE TO247 650V |
9,108 |
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- | Silicon Carbide Schottky | 650V | 60A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 2530pF @ 1V, 100kHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
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ON Semiconductor |
1200V 10A AUTO SIC SBD |
9,276 |
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Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 17A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 612pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 1.2KV 30A TO247-2 |
9,744 |
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- | Silicon Carbide Schottky | 1200V | 30A (DC) | 1.75V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1220pF @ 1V, 100KHz | Through Hole | TO-247-2 | TO-247-2 | - |
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ON Semiconductor |
650V 40A SIC SBD |
10,980 |
|
- | Silicon Carbide Schottky | 650V | 48A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 1989pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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ON Semiconductor |
650V 30A SIC SBD GEN1.5 |
10,776 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 37A (DC) | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 1260pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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ON Semiconductor |
650V 50A SIC SBD |
10,632 |
|
- | Silicon Carbide Schottky | 650V | 60A (DC) | 1.75V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 2530pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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ON Semiconductor |
1200V 20A AUTO SIC SBD |
11,028 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 30A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1220pF @ 1V, 100KHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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ON Semiconductor |
1200V 40A AUTO SIC SBD |
8,712 |
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Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 25A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1220pF @ 1V, 100KHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 30V 200MA SOD523F |
2,866,362 |
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- | Schottky | 30V | 200mA | 600mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 1µA @ 10V | - | Surface Mount | SC-79, SOD-523F | SOD-523F | -55°C ~ 125°C |
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ON Semiconductor |
DIODE SCHOTTKY 40V 30MA SOD523F |
2,008,002 |
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- | Schottky | 40V | 30mA | 370mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | - | 500nA @ 10V | - | Surface Mount | SC-79, SOD-523F | SOD-523F | -55°C ~ 125°C |
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ON Semiconductor |
DIODE GEN PURP 120V 200MA SOT23 |
86,496 |
|
- | Standard | 120V | 200mA (DC) | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 100V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 120V 200MA SOT23 |
82,122 |
|
- | Standard | 120V | 200mA (DC) | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 100V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | -55°C ~ 150°C |