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ON Semiconductor 광절 연기-트랜지스터, 광전지 출력

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카테고리반도체 / 절연체 / 광절 연기-트랜지스터, 광전지 출력
제조업체ON Semiconductor
기록 2,173
페이지 20/73
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
채널 수
전압-절연
전류 전송 비율 (최소)
전류 전송 비율 (최대)
켜기 / 끄기 시간 (일반)
상승 / 하강 시간 (일반)
입력 유형
출력 유형
전압-출력 (최대)
전류-출력 / 채널
전압-순방향 (Vf) (통상)
전류-DC 순방향 (If) (최대)
Vce 포화 (최대)
작동 온도
장착 유형
패키지 / 케이스
공급자 장치 패키지
H11D1300
ON Semiconductor
OPTOISO 5.3KV TRANS W/BASE 6DIP
4,374
-
1
5300Vrms
20% @ 10mA
-
5µs, 5µs
-
DC
Transistor with Base
300V
100mA
1.15V
80mA
400mV
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
H11D2300
ON Semiconductor
OPTOISO 5.3KV TRANS W/BASE 6DIP
8,856
-
1
5300Vrms
20% @ 10mA
-
5µs, 5µs
-
DC
Transistor with Base
300V
100mA
1.15V
80mA
400mV
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
MCT2200300
ON Semiconductor
OPTOISO 5.3KV TRANS W/BASE 6DIP
3,078
-
1
5300Vrms
20% @ 10mA
-
2µs, 2µs
-
DC
Transistor with Base
30V
50mA
1.25V
100mA
400mV
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
MCT5200
ON Semiconductor
OPTOISO 5.3KV TRANS W/BASE 6DIP
7,326
-
1
5300Vrms
75% @ 10mA
-
1.6µs, 18µs
1.3µs, 16µs
DC
Transistor with Base
30V
150mA
1.25V
50mA
400mV
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
MCT5201
ON Semiconductor
OPTOISO 5.3KV TRANS W/BASE 6DIP
4,932
-
1
5300Vrms
120% @ 5mA
-
3µs, 12µs
2.5µs, 16µs
DC
Transistor with Base
30V
150mA
1.25V
50mA
400mV
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
MCT5210
ON Semiconductor
OPTOISO 5.3KV TRANS W/BASE 6DIP
616
-
1
5300Vrms
70% @ 3mA
-
10µs, 400ns
-
DC
Transistor with Base
30V
150mA
1.25V
50mA
400mV
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
MCT5211
ON Semiconductor
OPTOISO 5.3KV TRANS W/BASE 6DIP
6,660
-
1
5300Vrms
150% @ 1.6mA
-
14µs, 2.5µs
-
DC
Transistor with Base
30V
150mA
1.25V
50mA
400mV
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
MCT270
ON Semiconductor
TRANSISTOR OPTOISOLATOR
4,140
-
1
5300Vrms
50% @ 10mA
115% @ 10mA
-
-
DC
Transistor with Base
30V
-
-
90mA
400mV
-
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
MCT271
ON Semiconductor
OPTOISO 5.3KV TRANS W/BASE 6DIP
4,446
-
1
5300Vrms
45% @ 10mA
90% @ 10mA
1µs, 48µs
-
DC
Transistor with Base
30V
50mA
1.25V
100mA
400mV
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
4N25
ON Semiconductor
OPTOISO 5.3KV TRANS W/BASE 6DIP
19,567
-
1
5300Vrms
20% @ 10mA
-
2µs, 2µs
-
DC
Transistor with Base
30V
-
1.18V
100mA
500mV
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
4N26X
ON Semiconductor
OPTOISO 5.3KV TRANS W/BASE 6DIP
6,174
-
1
5300Vrms
20% @ 10mA
-
2µs, 2µs
-
DC
Transistor with Base
30V
-
1.18V
100mA
500mV
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
4N27
ON Semiconductor
OPTOISO 5.3KV TRANS W/BASE 6DIP
89,297
-
1
5300Vrms
10% @ 10mA
-
2µs, 2µs
-
DC
Transistor with Base
30V
-
1.18V
100mA
500mV
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
4N35
ON Semiconductor
OPTOISO 5.3KV TRANS W/BASE 6DIP
175,548
-
1
5300Vrms
100% @ 10mA
-
2µs, 2µs
-
DC
Transistor with Base
30V
-
1.18V
100mA
300mV
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
MCA231
ON Semiconductor
TRANSISTOR OPTOISOLATOR
8,496
-
1
4400Vrms
-
-
-
-
DC
Darlington
30V
150mA
-
10mA
-
-
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
H11G1
ON Semiconductor
OPTOISO 5.3KV DARL W/BASE 6DIP
5,183
-
1
5300Vrms
1000% @ 10mA
-
5µs, 100µs
-
DC
Darlington with Base
100V
-
1.3V
60mA
1V
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
H11G2
ON Semiconductor
OPTOISO 5.3KV DARL W/BASE 6DIP
4,608
-
1
5300Vrms
1000% @ 10mA
-
5µs, 100µs
-
DC
Darlington with Base
80V
-
1.3V
60mA
1V
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
HCPL2503
ON Semiconductor
OPTOISO 2.5KV TRANS W/BASE 8DIP
5,235
-
1
2500Vrms
12% @ 16mA
-
450ns, 300ns
-
DC
Transistor with Base
20V
8mA
1.45V
25mA
-
-55°C ~ 100°C
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
6N138
ON Semiconductor
OPTOISO 2.5KV DARL W/BASE 8DIP
21,007
-
1
2500Vrms
300% @ 1.6mA
-
1.5µs, 7µs
-
DC
Darlington with Base
7V
60mA
1.3V
20mA
-
-40°C ~ 85°C
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
6N139
ON Semiconductor
OPTOISO 2.5KV DARL W/BASE 8DIP
852,483
-
1
2500Vrms
500% @ 1.6mA
-
1.5µs, 7µs
-
DC
Darlington with Base
18V
60mA
1.3V
20mA
-
-40°C ~ 85°C
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
6N135
ON Semiconductor
OPTOISO 2.5KV TRANS W/BASE 8DIP
126,130
-
1
2500Vrms
7% @ 16mA
50% @ 16mA
450ns, 500ns
-
DC
Transistor with Base
20V
8mA
1.45V
25mA
-
-55°C ~ 100°C
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
6N136
ON Semiconductor
OPTOISO 2.5KV TRANS W/BASE 8DIP
120,128
-
1
2500Vrms
19% @ 16mA
50% @ 16mA
450ns, 500ns
-
DC
Transistor with Base
20V
8mA
1.45V
25mA
-
-55°C ~ 100°C
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
H11F2
ON Semiconductor
OPTOISOLTR 5.3KV PHOTO FET 6-DIP
4,014
-
1
5300Vrms
-
-
25µs, 25µs (Max)
-
DC
MOSFET
30V
-
1.3V
60mA
-
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
H11F3
ON Semiconductor
OPTOISOLTR 5.3KV PHOTO FET 6-DIP
6,930
-
1
5300Vrms
-
-
25µs, 25µs (Max)
-
DC
MOSFET
15V
-
1.3V
60mA
-
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
H11A5
ON Semiconductor
OPTOISO 5.3KV TRANS W/BASE 6DIP
7,956
-
1
5300Vrms
30% @ 10mA
-
2µs, 2µs
-
DC
Transistor with Base
30V
-
1.18V
100mA
400mV
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
H11A5100
ON Semiconductor
OPTOCOUPLER TRANS-OUT 6-DIP
6,534
-
1
5300Vrms
30% @ 10mA
-
-
-
DC
Transistor with Base
30V
-
-
100mA
400mV
-
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
H11AG1
ON Semiconductor
OPTOISO 5.3KV TRANS W/BASE 6DIP
2,970
-
1
5300Vrms
100% @ 1mA
-
5µs, 5µs
-
DC
Transistor with Base
30V
50mA
1.5V (Max)
50mA
400mV
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
4N29
ON Semiconductor
OPTOISO 5.3KV DARL W/BASE 6DIP
8,712
-
1
5300Vrms
100% @ 10mA
-
5µs, 40µs (Max)
-
DC
Darlington with Base
30V
150mA
1.2V
80mA
1V
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
4N30
ON Semiconductor
OPTOISO 5.3KV DARL W/BASE 6DIP
120
-
1
5300Vrms
100% @ 10mA
-
5µs, 40µs (Max)
-
DC
Darlington with Base
30V
150mA
1.2V
80mA
1V
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
4N31
ON Semiconductor
OPTOISO 5.3KV DARL W/BASE 6DIP
3,330
-
1
5300Vrms
50% @ 10mA
-
5µs, 40µs (Max)
-
DC
Darlington with Base
30V
150mA
1.2V
80mA
1.2V
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP
H11G45
ON Semiconductor
OPTOISO 4KV DARL W/BASE 6DIP
8,388
-
1
4000Vrms
250% @ 1mA
-
5µs, 150µs
-
DC
Darlington with Base
55V
100mA
11V
60mA
-
-55°C ~ 100°C
Through Hole
6-DIP (0.300", 7.62mm)
6-DIP