브리지 정류기
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카테고리반도체 / 다이오드 및 정류기 / 브리지 정류기
기록 5,469
페이지 175/183
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제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 기술 | 전압-피크 역방향 (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 전류-역방향 누설 @ Vr | 작동 온도 | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 800V 3.9A GBU |
2,100 |
|
- | Single Phase | Standard | 800V | 3.9A | 1V @ 8A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 800V 3.9A GBU |
5,760 |
|
- | Single Phase | Standard | 800V | 3.9A | 1V @ 8A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 800V 3.9A GBU |
6,948 |
|
- | Single Phase | Standard | 800V | 3.9A | 1V @ 8A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 800V 3.9A GBU |
4,374 |
|
- | Single Phase | Standard | 800V | 3.9A | 1V @ 8A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 800V 3.9A GBU |
7,128 |
|
- | Single Phase | Standard | 800V | 3.9A | 1V @ 8A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 800V 3.9A GBU |
6,012 |
|
- | Single Phase | Standard | 800V | 3.9A | 1V @ 8A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 800V 3.9A GBU |
5,130 |
|
- | Single Phase | Standard | 800V | 3.9A | 1V @ 8A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 1KV 3.9A GBU |
5,868 |
|
- | Single Phase | Standard | 1kV | 3.9A | 1V @ 8A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 1KV 3.9A GBU |
2,538 |
|
- | Single Phase | Standard | 1kV | 3.9A | 1V @ 8A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 1KV 3.9A GBU |
8,280 |
|
- | Single Phase | Standard | 1kV | 3.9A | 1V @ 8A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 200V 3.5A GSIB-5S |
5,904 |
|
- | Single Phase | Standard | 200V | 3.5A | 950mV @ 7.5A | 10µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 600V 3.5A GSIB-5S |
2,052 |
|
- | Single Phase | Standard | 600V | 3.5A | 950mV @ 7.5A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 600V 3.5A GSIB-5S |
8,712 |
|
- | Single Phase | Standard | 600V | 3.5A | 950mV @ 7.5A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 800V 3.5A GSIB-5S |
7,974 |
|
- | Single Phase | Standard | 800V | 3.5A | 950mV @ 7.5A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 800V 3.5A GSIB-5S |
2,736 |
|
- | Single Phase | Standard | 800V | 3.5A | 950mV @ 7.5A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 600V 3.5A GSIB-5S |
5,976 |
|
- | Single Phase | Standard | 600V | 3.5A | 1V @ 7.5A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 600V 3.5A GSIB-5S |
6,318 |
|
- | Single Phase | Standard | 600V | 3.5A | 1V @ 7.5A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 600V 3.5A GSIB-5S |
4,302 |
|
- | Single Phase | Standard | 600V | 3.5A | 1V @ 7.5A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 600V 3.5A GSIB-5S |
3,186 |
|
- | Single Phase | Standard | 600V | 3.5A | 1V @ 12.5A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 600V 3.5A GSIB-5S |
2,100 |
|
- | Single Phase | Standard | 600V | 3.5A | 1V @ 12.5A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 800V 3.5A GSIB-5S |
2,160 |
|
- | Single Phase | Standard | 800V | 3.5A | 1V @ 12.5A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 800V 3.5A GSIB-5S |
8,244 |
|
- | Single Phase | Standard | 800V | 3.5A | 1V @ 12.5A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 600V 2.8A GSIB-5S |
6,012 |
|
- | Single Phase | Standard | 600V | 2.8A | 950mV @ 3A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 600V 2.8A GSIB-5S |
5,616 |
|
- | Single Phase | Standard | 600V | 2.8A | 1V @ 3A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 600V 2.8A GSIB-5S |
7,362 |
|
- | Single Phase | Standard | 600V | 2.8A | 1V @ 3A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 800V 1A 4SMD |
7,074 |
|
- | Single Phase | Standard | 800V | 1A | 950mV @ 400mA | 5µA @ 800V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | 4-SMD |
|
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 50V 4A KBL |
4,500 |
|
- | Single Phase | Standard | 50V | 4A | 1.1V @ 4A | 10µA @ 50V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBL | KBL |
|
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 100V 4A KBL |
2,628 |
|
- | Single Phase | Standard | 100V | 4A | 1.1V @ 4A | 10µA @ 100V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBL | KBL |
|
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 200V 4A KBL |
6,102 |
|
- | Single Phase | Standard | 200V | 4A | 1.1V @ 4A | 10µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBL | KBL |
|
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 400V 4A KBL |
7,200 |
|
- | Single Phase | Standard | 400V | 4A | 1.1V @ 4A | 10µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBL | KBL |