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필터보기
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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 1017/1165
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE SIC 600V 8A SAWN WAFER |
6,570 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | Surface Mount | Die | Die | -55°C ~ 175°C |
|
|
Infineon Technologies |
DIODE SIC 600V 8A SAWN WAFER |
4,734 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | Surface Mount | Die | Die | -55°C ~ 175°C |
|
|
Infineon Technologies |
DIODE GEN PURPOSE SAWN WAFER |
4,482 |
|
* | - | - | - | - | - | - | - | - | Surface Mount | Die | Sawn on foil | - |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 20V 50MA DIE |
8,118 |
|
- | Standard | 20V | 50mA (DC) | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 600ns | 5pA @ 5V | 1.3pF @ 0V, 1MHz | Surface Mount | Die | Die | -65°C ~ 125°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 100V 1A DO41 |
8,208 |
|
- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 400V 1A DO41 |
8,910 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 400V 1A DO41 |
4,878 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 400V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 600V 1A DO41 |
7,002 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 600V 1A DO41 |
7,920 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 600V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 800V 1A DO41 |
7,650 |
|
- | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 1KV 1A DO41 |
4,266 |
|
- | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 1000V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 100V 1A DO41 |
3,996 |
|
- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 100V 1A DO41 |
7,110 |
|
- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 200V 1A DO41 |
5,580 |
|
- | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 200V 1A DO41 |
8,226 |
|
- | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 400V 1A DO41 |
8,262 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 400V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 400V 1A DO41 |
3,526 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 600V 1A DO41 |
4,716 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 600V 1A DO41 |
4,284 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 600V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 800V 1A DO41 |
6,732 |
|
- | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 1KV 1A DO41 |
7,974 |
|
- | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 1000V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
|
Micro Commercial Co |
DIODE SCHOTTKY 20V 1A SOD123HE |
6,678 |
|
- | Schottky | 20V | 1A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 125°C |
|
|
Micro Commercial Co |
DIODE SCHOTTKY 30V 1A SOD123HE |
6,534 |
|
- | Schottky | 30V | 1A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 125°C |
|
|
Micro Commercial Co |
DIODE SCHOTTKY 50V 1A SOD123HE |
6,714 |
|
- | Schottky | 50V | 1A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
|
Micro Commercial Co |
DIODE SCHOTTKY 80V 1A SOD123HE |
3,546 |
|
- | Schottky | 80V | 1A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 80V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 180°C |
|
|
Micro Commercial Co |
DIODE SCHOTTKY 20V 2A SOD123HE |
2,718 |
|
- | Schottky | 20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 125°C |
|
|
Micro Commercial Co |
DIODE SCHOTTKY 30V 2A SOD123HE |
8,280 |
|
- | Schottky | 30V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 125°C |
|
|
Micro Commercial Co |
DIODE SCHOTTKY 50V 2A SOD123HE |
3,510 |
|
- | Schottky | 50V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
|
Micro Commercial Co |
DIODE SCHOTTKY 80V 2A SOD123HE |
2,808 |
|
- | Schottky | 80V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 80V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
|
Micro Commercial Co |
DIODE SCHOTTKY 50V 3A SOD123HE |
6,930 |
|
* | Schottky | 50V | 3A | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |