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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 1066/1165
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
RSFALHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 500MA SUB SMA
8,064
Automotive, AEC-Q101
Standard
50V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFALHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 500MA SUB SMA
6,768
Automotive, AEC-Q101
Standard
50V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFBL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 500MA SUBSMA
8,388
-
Standard
100V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFBL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 500MA SUBSMA
8,136
-
Standard
100V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFBLHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 500MA SUBSMA
2,862
Automotive, AEC-Q101
Standard
100V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFBLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 500MA SUBSMA
4,590
Automotive, AEC-Q101
Standard
100V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFDL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 500MA SUBSMA
3,294
-
Standard
200V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFDL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 500MA SUBSMA
6,516
-
Standard
200V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFDLHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 500MA SUBSMA
4,788
Automotive, AEC-Q101
Standard
200V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFDLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 500MA SUBSMA
8,928
Automotive, AEC-Q101
Standard
200V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFGL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 500MA SUBSMA
4,356
-
Standard
400V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFGL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 500MA SUBSMA
8,370
-
Standard
400V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFGLHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 500MA SUBSMA
2,466
Automotive, AEC-Q101
Standard
400V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFGLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 500MA SUBSMA
4,590
Automotive, AEC-Q101
Standard
400V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFJL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 500MA SUBSMA
6,102
-
Standard
600V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFJL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 500MA SUBSMA
3,690
-
Standard
600V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFJLHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 500MA SUBSMA
7,614
Automotive, AEC-Q101
Standard
600V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFJLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 500MA SUBSMA
5,724
Automotive, AEC-Q101
Standard
600V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFKL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 500MA SUBSMA
8,856
-
Standard
800V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFKL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 500MA SUBSMA
2,106
-
Standard
800V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFKLHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 500MA SUBSMA
3,996
Automotive, AEC-Q101
Standard
800V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFKLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 500MA SUBSMA
8,892
Automotive, AEC-Q101
Standard
800V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFML MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 500MA SUB SMA
8,748
-
Standard
-
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFML MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 500MA SUB SMA
7,902
-
Standard
-
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFMLHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 500MA SUB SMA
3,888
Automotive, AEC-Q101
Standard
-
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFMLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 500MA SUB SMA
2,502
Automotive, AEC-Q101
Standard
-
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
S1AL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
4,734
-
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 50V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1AL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
8,208
-
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 50V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1AL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
3,060
-
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 50V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1ALHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
3,582
Automotive, AEC-Q101
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 50V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C