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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 1076/1165
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
RSFAL RUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 500MA SUB SMA
3,942
-
Standard
50V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFALHRUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 500MA SUB SMA
8,964
Automotive, AEC-Q101
Standard
50V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFALHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 500MA SUB SMA
8,838
Automotive, AEC-Q101
Standard
50V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFBL RUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 500MA SUBSMA
6,012
-
Standard
100V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFBLHRUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 500MA SUBSMA
6,696
Automotive, AEC-Q101
Standard
100V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFDLHRUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 500MA SUBSMA
3,436
Automotive, AEC-Q101
Standard
200V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFDLHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 500MA SUBSMA
7,020
Automotive, AEC-Q101
Standard
200V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFGL RUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 500MA SUBSMA
2,862
-
Standard
400V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFGLHRUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 500MA SUBSMA
4,464
Automotive, AEC-Q101
Standard
400V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFGLHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 500MA SUBSMA
5,868
Automotive, AEC-Q101
Standard
400V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFJLHRUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 500MA SUBSMA
4,158
Automotive, AEC-Q101
Standard
600V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFJLHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 500MA SUBSMA
7,758
Automotive, AEC-Q101
Standard
600V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFKL RUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 500MA SUBSMA
3,418
-
Standard
800V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFKLHRUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 500MA SUBSMA
3,078
Automotive, AEC-Q101
Standard
800V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFKLHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 500MA SUBSMA
2,520
Automotive, AEC-Q101
Standard
800V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFMLHRUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 500MA SUB SMA
6,750
Automotive, AEC-Q101
Standard
-
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFMLHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 500MA SUB SMA
5,850
Automotive, AEC-Q101
Standard
-
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
S1AL RUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
4,860
-
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 50V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1ALHRUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
3,456
Automotive, AEC-Q101
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 50V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1BLHRUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
8,730
Automotive, AEC-Q101
Standard
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 100V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1GL RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
8,100
-
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 400V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1GLHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
7,020
Automotive, AEC-Q101
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 400V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1KL RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A SUB SMA
3,078
-
Standard
800V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 800V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1KLHRUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A SUB SMA
5,382
Automotive, AEC-Q101
Standard
800V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 800V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1KLHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A SUB SMA
4,644
Automotive, AEC-Q101
Standard
800V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 800V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
SS110LHRUG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 1A SUB SMA
5,364
Automotive, AEC-Q101
Schottky
100V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 100V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS110LHRVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 1A SUB SMA
8,388
Automotive, AEC-Q101
Schottky
100V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 100V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS115LHRUG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 1A SUB SMA
3,060
Automotive, AEC-Q101
Schottky
150V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 150V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS115LHRVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 1A SUB SMA
3,060
Automotive, AEC-Q101
Schottky
150V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 150V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS12L RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A SUB SMA
4,338
-
Schottky
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 20V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C