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필터보기
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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 108/1165
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제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Sanken |
DIODE GEN PURP 1KV 500MA AXIAL |
31,650 |
|
- | Standard | 1000V | 500mA | 3.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 50µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1.5A DO214AA |
31,872 |
|
- | Standard | 400V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 100V 1A SMA |
40,758 |
|
- | Schottky | 100V | 1A | 850mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | 50pF @ 1V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 8A TO277A |
35,100 |
|
eSMP®, TMBS® | Schottky | 100V | 8A | 780mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | 860pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 175°C |
|
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|
Sanken |
DIODE SCHOTTKY 40V 1A SJP |
33,414 |
|
- | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 500MA SMD3 |
587 |
|
- | Schottky | 40V | 500mA | 550mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | 125pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMD3 | 125°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 5A DO201AD |
16,596 |
|
- | Schottky | 60V | 5A | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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STMicroelectronics |
DIODE SCHOTTKY 60V 1A MELF |
13,428 |
|
- | Schottky | 60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-213AB, MELF | MELF | -65°C ~ 125°C |
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 2A DO214AA |
26,718 |
|
- | Schottky | 30V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 30V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 125°C |
|
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|
STMicroelectronics |
DIODE GEN PURP 1KV 1A DO41 |
74,454 |
|
- | Standard | 1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | 175°C (Max) |
|
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|
Nexperia |
DIODE SCHOTTKY 40V 3A SOD128 |
22,398 |
|
- | Schottky | 40V | 3A | 490mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | 350pF @ 1V, 1MHz | Surface Mount | SOD-128 | CFP5 | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO201AD |
12,864 |
|
- | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 36pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2A SOD57 |
238,212 |
|
- | Avalanche | 600V | 2A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 100V 10A 5DFN |
38,256 |
|
Automotive, AEC-Q101 | Schottky | 100V | 10A | 690mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 70µA @ 100V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 100V 5A 5DFN |
17,382 |
|
- | Schottky | 100V | 5A | 980mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 100V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 800V 1A DO41 |
16,020 |
|
- | Standard | 800V | 1A | 1.65V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | 175°C (Max) |
|
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|
Central Semiconductor Corp |
DIODE GEN PURP 200V 1A SOD123F |
54,366 |
|
- | Standard | 200V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 4pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123F | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 8A TO277A |
56,706 |
|
eSMP® | Schottky | 90V | 8A | 900mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2µA @ 90V | 140pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 2A DO41 |
84,012 |
|
- | Standard | 600V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 2µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | 175°C (Max) |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.4A SOD57 |
211,656 |
|
- | Avalanche | 1000V | 1.4A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 1000V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Diodes Incorporated |
DIODE GEN PURP 150V 3A SMB |
53,304 |
|
- | Standard | 150V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 150V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 150°C |
|
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 2A PMDS |
16,818 |
|
Automotive, AEC-Q101 | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Surface Mount | DO-214AC, SMA | PMDS | 125°C (Max) |
|
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|
Microsemi |
DIODE SCHOTTKY 20V 1A POWERMITE1 |
25,932 |
|
- | Schottky | 20V | 1A | 530mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 20V | - | Surface Mount | DO-216AA | Powermite 1 (DO216-AA) | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 5A DO201AD |
22,116 |
|
- | Schottky | 200V | 5A | 1.05V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 5A DO214AB |
47,388 |
|
- | Standard | 200V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 200V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 1.9A DO214AA |
93,636 |
|
TMBS® | Schottky | 100V | 1.9A (DC) | 770mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | 230pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2A DO214AA |
32,928 |
|
- | Standard | 400V | 2A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 400V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
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|
Sanken |
DIODE GEN PURP 200V 1A SJP |
56,148 |
|
- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 25µA @ 200V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE RECT SBR 45V 8A POWERDI5 |
17,460 |
|
SBR® | Super Barrier | 45V | 8A | 510mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 350µA @ 45V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 4A TO277A |
23,958 |
|
FRED Pt® | Standard | 100V | 4A | 930mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 2µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |