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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 1116/1165
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
SR815HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 8A DO201AD
4,284
Automotive, AEC-Q101
Schottky
150V
8A
1.02V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
UF1A B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
3,996
-
Standard
50V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1AHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
3,636
Automotive, AEC-Q101
Standard
50V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1B B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
4,176
-
Standard
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1BHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
7,470
Automotive, AEC-Q101
Standard
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1D B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
8,604
-
Standard
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1DHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
7,488
Automotive, AEC-Q101
Standard
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
8,802
-
Standard
400V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
8,694
Automotive, AEC-Q101
Standard
400V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1J B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
7,560
-
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1JHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
5,148
Automotive, AEC-Q101
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1K B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO204AL
2,610
-
Standard
800V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1KHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO204AL
4,734
Automotive, AEC-Q101
Standard
800V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1M B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
2,952
-
Standard
-
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1MHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
4,572
Automotive, AEC-Q101
Standard
-
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4001 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
7,182
-
Standard
50V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4001HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
6,660
Automotive, AEC-Q101
Standard
50V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4002 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
7,506
-
Standard
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4002HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
3,312
Automotive, AEC-Q101
Standard
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4003 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
7,362
-
Standard
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4003HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
7,254
Automotive, AEC-Q101
Standard
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4004 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
4,914
-
Standard
400V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4004HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
7,254
Automotive, AEC-Q101
Standard
400V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4005 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
6,624
-
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4005HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
3,366
Automotive, AEC-Q101
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4006 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO204AL
2,358
-
Standard
800V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4006HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO204AL
4,860
Automotive, AEC-Q101
Standard
800V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4007 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
6,462
-
Standard
-
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4007HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
6,462
Automotive, AEC-Q101
Standard
-
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UG2D B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO204AC
3,672
-
Standard
200V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C