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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 1157/1165
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
MURS120T3H
ON Semiconductor
DIODE GEN PURPOSE
8,658
-
Standard
200V
2A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 200V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 175°C
MURS140T3H
ON Semiconductor
DIODE GEN PURPOSE
4,428
-
Standard
400V
2A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 400V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 175°C
MURS160T3H
ON Semiconductor
DIODE GEN PURPOSE
2,988
-
Standard
600V
2A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 175°C
MURS320T3H
ON Semiconductor
DIODE GEN PURPOSE
6,930
-
Standard
200V
4A
890mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
-
Surface Mount
DO-214AB, SMC
SMC
-65°C ~ 175°C
MURS360T3H
ON Semiconductor
DIODE GEN PURPOSE
3,454
-
Standard
600V
4A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
-
Surface Mount
DO-214AB, SMC
SMC
-65°C ~ 175°C
SS24T3H
ON Semiconductor
DIODE SCHOTTKY
4,788
-
Schottky
40V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 150°C
SS26T3H
ON Semiconductor
DIODE SCHOTTKY
2,826
-
Schottky
60V
2A
630mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 60V
-
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 150°C
D170S25BS1XPSA1
Infineon Technologies
DIODE GEN PURP BG-DSW271-1
3,438
-
Standard
2500V
255A
2.3V @ 800A
Standard Recovery >500ns, > 200mA (Io)
4µs
5mA @ 2500V
-
Stud Mount
DO-205AA, DO-8, Stud
-
140°C (Max)
D56S45CS02PRXPSA1
Infineon Technologies
DIODE GEN PURP BG-DSW272-1
8,676
-
Standard
4500V
102A
4.5V @ 320A
Standard Recovery >500ns, > 200mA (Io)
3.3µs
5mA @ 4500V
-
Stud Mount
DO-205AA, DO-8, Stud
-
125°C (Max)
D690S26TS01XPSA1
Infineon Technologies
DIODE GEN PURP BG-D5726K-1
5,904
-
Standard
2600V
690A
2.7V @ 3000A
Standard Recovery >500ns, > 200mA (Io)
9µs
25mA @ 2600V
-
Chassis Mount
DO-200AB, B-PUK
-
150°C (Max)
D841S45TS01XDLA1
Infineon Technologies
DIODE GEN PURP BG-D7514-1
3,654
-
Standard
4500V
1080A
3.5V @ 2500A
Standard Recovery >500ns, > 200mA (Io)
-
140mA @ 4500V
-
Chassis Mount
DO-200AC, K-PUK
-
125°C (Max)
1N4148WT-7-G
Diodes Incorporated
DIODE GEN PURP 80V 125MA SOD523
3,150
*
-
-
-
-
-
-
-
-
-
-
-
-
1N4448HWS-7-G
Diodes Incorporated
DIODE GEN PURP 80V 250MA SOD323
1,605
*
-
-
-
-
-
-
-
-
-
-
-
-
1N4448HWT-7-G
Diodes Incorporated
DIODE GEN PURP 80V 125MA SOD523
3,384
*
-
-
-
-
-
-
-
-
-
-
-
-
1N5404-A
Diodes Incorporated
DIODE GPP 3A DO-201AD
4,536
*
-
-
-
-
-
-
-
-
-
-
-
-
BAL99-7-F-79
Diodes Incorporated
DIODE GEN PURP 75V SOT23-3
4,230
*
-
-
-
-
-
-
-
-
-
-
-
-
BAS116-7-G
Diodes Incorporated
DIODE GEN PURP 85V SOT23-3
5,544
*
-
-
-
-
-
-
-
-
-
-
-
-
BAS116T-7-G
Diodes Incorporated
DIODE GEN PURP 85V SOT523
6,552
*
-
-
-
-
-
-
-
-
-
-
-
-
BAS16-7-G
Diodes Incorporated
DIODE GEN PURP SOT23-3
2,250
*
-
-
-
-
-
-
-
-
-
-
-
-
BAS16T-7-G
Diodes Incorporated
DIODE GEN PURP SOT23-3
4,986
*
-
-
-
-
-
-
-
-
-
-
-
-
BAS16W-7-G
Diodes Incorporated
DIODE GEN PURP SOT323
8,100
*
-
-
-
-
-
-
-
-
-
-
-
-
BAS19-7-G
Diodes Incorporated
DIODE GENERAL PURPOSE SOT23
4,554
*
-
-
-
-
-
-
-
-
-
-
-
-
BAS20-7-G
Diodes Incorporated
DIODE GENERAL PURPOSE SOT23
4,302
*
-
-
-
-
-
-
-
-
-
-
-
-
BAS21-7-G
Diodes Incorporated
DIODE GENERAL PURPOSE SOT23
7,524
*
-
-
-
-
-
-
-
-
-
-
-
-
BAV116W-7-G
Diodes Incorporated
DIODE GEN PURP SOD123
5,508
*
-
-
-
-
-
-
-
-
-
-
-
-
BAV170-7-G
Diodes Incorporated
DIODE GEN PURPOSE
3,436
*
-
-
-
-
-
-
-
-
-
-
-
-
BAV170T-7-G
Diodes Incorporated
DIODE GEN PURPOSE
7,812
*
-
-
-
-
-
-
-
-
-
-
-
-
BAV199-7-G
Diodes Incorporated
DIODE GEN PURPOSE
5,184
*
-
-
-
-
-
-
-
-
-
-
-
-
BAV199T-7-G
Diodes Incorporated
DIODE GEN PURPOSE
7,416
*
-
-
-
-
-
-
-
-
-
-
-
-
BAV19W-7-G
Diodes Incorporated
DIODE GEN PURPOSE
4,014
*
-
-
-
-
-
-
-
-
-
-
-
-