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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 217/1165
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 2A DO214AA |
15,300 |
|
- | Schottky | 20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 20V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 125°C |
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Diodes Incorporated |
DIODE GEN PURP 400V 1.5A SMA |
8,604 |
|
- | Standard | 400V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
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Rohm Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
8,496 |
|
Automotive, AEC-Q101 | Schottky | 40V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 3A DO201AD |
7,488 |
|
- | Schottky | 100V | 3A | 800mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
|
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|
Comchip Technology |
DIODE SCHOTTKY 20V 5A DO214AB |
6,912 |
|
- | Schottky | 20V | 5A | 500mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 380pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -50°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 3A SMPA |
6,462 |
|
Automotive, AEC-Q101, TMBS® | Schottky | 45V | 3A | 540mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 450µA @ 45V | 450pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -40°C ~ 150°C |
|
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Micro Commercial Co |
200MAHIGH VOLTAGEDO-15 |
5,670 |
|
- | Standard | 3000V | 200mA | 2.3V @ 500mA | Small Signal =< 200mA (Io), Any Speed | 1.2µs | 5µA @ 3000V | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |
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Sanken |
DIODE GEN PURP 800V 1.2A AXIAL |
6,480 |
|
- | Standard | 800V | 1.2A | 920mV @ 1.2A | Standard Recovery >500ns, > 200mA (Io) | 18µs | 10µA @ 800V | - | Through Hole | Axial, Radial Bend | Axial | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 3A DO214AB |
8,262 |
|
- | Schottky | 60V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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|
Sanken |
DIODE GEN PURP 600V 800MA AXIAL |
5,040 |
|
- | Standard | 600V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 600V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
|
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Panasonic Electronic Components |
DIODE GEN PURP 300V 100MA SMINI3 |
7,812 |
|
- | Standard | 300V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 60ns | 1µA @ 300V | 3pF @ 6V, 1MHz | Surface Mount | SC-85 | SMini3-F2-B | 150°C (Max) |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 2A DO214AA |
2,358 |
|
Automotive, AEC-Q101 | Schottky | 60V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 60V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 150°C |
|
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|
Sanken |
DIODE GEN PURP 600V 500MA AXIAL |
2,070 |
|
- | Standard | 600V | 500mA | 1.7V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 600V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
|
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|
Sanken |
DIODE GEN PURP 200V 500MA AXIAL |
6,246 |
|
- | Standard | 200V | 500mA | 1.7V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
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SMC Diode Solutions |
DIODE GEN PURP 600V DPAK |
6,462 |
|
- | Standard | 600V | - | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 8µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 150°C |
|
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|
Rohm Semiconductor |
SUPER FAST RECOVERY DIODE AEC-Q1 |
6,498 |
|
Automotive, AEC-Q101 | Standard | 600V | 1.5A | 1.55V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1µA @ 600V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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|
Sanken |
DIODE GEN PURP 1KV 200MA AXIAL |
7,002 |
|
- | Standard | 1000V | 200mA | 4V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 200ns | 100µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Rohm Semiconductor |
RB060MM-30TF IS THE HIGH RELIABI |
8,208 |
|
Automotive, AEC-Q101 | Schottky | 30V | 2A | 490mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 3A PMDTM |
7,272 |
|
Automotive, AEC-Q101 | Schottky | 40V | 3A | 690mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 40V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Sanken |
DIODE GEN PURP 600V 600MA AXIAL |
6,534 |
|
- | Standard | 600V | 600mA | 2V @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 100µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 600V 1A AXIAL |
3,258 |
|
- | Standard | 600V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE SCHOTTKY 30V 1A SJP |
8,874 |
|
- | Schottky | 30V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 5A DO214AB |
15,648 |
|
- | Standard | 800V | 5A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 5A DO214AB |
20,736 |
|
- | Standard | 600V | 5A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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|
Sanken |
DIODE GEN PURP 800V 1.2A AXIAL |
7,056 |
|
- | Standard | 800V | 1.2A | 920mV @ 1.2A | Standard Recovery >500ns, > 200mA (Io) | 18µs | 10µA @ 800V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.5A |
8,514 |
|
- | Avalanche | 200V | 1.5A | 1.25V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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Diodes Incorporated |
DIODE SBR 50V 25A POWERDI5060-8 |
2,844 |
|
SBR® | Super Barrier | 50V | 25A | 520mV @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | -55°C ~ 150°C |
|
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|
Diodes Incorporated |
DIODE SBR 60V 25A POWERDI5060-8 |
4,194 |
|
SBR® | Super Barrier | 60V | 25A | 600mV @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 150µA @ 60V | - | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 8A DO221BC |
7,740 |
|
eSMP®, TMBS® | Schottky | 100V | 8A | 760mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 100V | 850pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -40°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 120V 8A DO221BC |
4,968 |
|
eSMP®, TMBS® | Schottky | 120V | 8A | 870mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 120V | 700pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -40°C ~ 150°C |