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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 261/1165
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제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 20A TO263AB |
14,478 |
|
TMBS® | Schottky | 100V | 20A | 900mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE FRED 600V 30A TO220AC |
15,996 |
|
FRED Pt® | Standard | 600V | 30A | 2.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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STMicroelectronics |
DIODE RECT 60V 20A TO220AB |
10,440 |
|
- | FERD (Field Effect Rectifier Diode) | 60V | 20A | 560mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 230µA @ 60V | - | Through Hole | TO-220-3 | TO-220AB | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 10A TO263AB |
14,712 |
|
- | Schottky | 100V | 10A | 770mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4.5µA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -65°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 15A DO247 |
8,028 |
|
Automotive, AEC-Q101 | Standard | 600V | 15A | 2.95V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 20µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
|
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Rohm Semiconductor |
ROHM'S FAST RECOVERY DIODES ARE |
20,256 |
|
Automotive, AEC-Q101 | Standard | 300V | 20A | 1.5V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 300V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
|
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|
ON Semiconductor |
DIODE GEN PURP 600V 20A TO220F |
9,072 |
|
- | Standard | 600V | 20A | 1.75V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220F | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30A 100V TO-220AB |
19,224 |
|
Automotive, AEC-Q101 | Schottky | 100V | 30A | 1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350µA @ 100V | - | Through Hole | TO-220-3 | TO-220AB | -40°C ~ 150°C |
|
|
|
Rohm Semiconductor |
ROHM'S FAST RECOVERY DIODES ARE |
22,164 |
|
Automotive, AEC-Q101 | Standard | 600V | 20A | 2.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
|
|
|
ON Semiconductor |
DIODE GEN PURP 1.2KV 15A TO220-2 |
5,400 |
|
- | Standard | 1200V | 15A | 3.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A ITO220AC |
12,348 |
|
- | Standard | 600V | 8A | 1.75V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 30µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
|
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|
Comchip Technology |
DIODE SILICON CARBIDE POWER SCHO |
17,148 |
|
- | Silicon Carbide Schottky | 650V | 3A (DC) | 1.7V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 190pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220F | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 16A TO263AB |
18,216 |
|
- | Standard | 600V | 16A | 1.5V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 145pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -65°C ~ 150°C |
|
|
|
Rohm Semiconductor |
ROHM'S FAST RECOVERY DIODES ARE |
13,146 |
|
Automotive, AEC-Q101 | Standard | 600V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 600V 4A TO220AC |
18,540 |
|
- | Silicon Carbide Schottky | 600V | 4A | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 200pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
|
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|
Rohm Semiconductor |
ROHM'S FAST RECOVERY DIODES ARE |
22,608 |
|
Automotive, AEC-Q101 | Standard | 600V | 20A | 1.55V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 25A D2PAK |
21,372 |
|
HEXFRED® | Standard | 600V | 25A (DC) | 2V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 20µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE FRED 600V 25A TO220AC |
11,136 |
|
HEXFRED® | Standard | 600V | 25A | 2V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 20µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 30A TO220AC |
22,068 |
|
FRED Pt® | Standard | 1200V | 30A | 2.68V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 220ns | 145µA @ 1.2kV | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE FREDS 1200V 30A TO-220 |
7,236 |
|
FRED Pt® | Standard | 1200V | 30A | 2.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 113ns | 50µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE FREDS 1200V 30A TO-220 |
23,580 |
|
FRED Pt® | Standard | 1200V | 30A | 3.15V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 50µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 1.2KV 30A TO220-2 |
15,120 |
|
- | Standard | 1200V | 30A | 3.2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 250µA @ 1200V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODES SILICON CARBIDE |
22,212 |
|
- | Silicon Carbide Schottky | 650V | 8A (DC) | 1.5V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 400pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTL | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 30A DO247 |
7,176 |
|
Automotive, AEC-Q101 | Standard | 600V | 30A | 2.95V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 40µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 16A ITO220AC |
21,828 |
|
- | Standard | 200V | 16A | 975mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -65°C ~ 150°C |
|
|
|
Comchip Technology |
DIODE SILICON CARBIDE POWER SCHO |
8,868 |
|
- | Silicon Carbide Schottky | 650V | 21.5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 424pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 16A D2PAK |
23,436 |
|
HEXFRED® | Standard | 1200V | 16A (DC) | 3.93V @ 32A | Fast Recovery =< 500ns, > 200mA (Io) | 135ns | 20µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
|
Comchip Technology |
DIODE SILICON CARBIDE POWER SCHO |
8,172 |
|
- | Silicon Carbide Schottky | 650V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 430pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220F | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 650V 6A TO220AC |
20,940 |
|
- | Silicon Carbide Schottky | 650V | 6A | 1.75V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 300pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 30A TO247-2 |
16,032 |
|
Automotive, AEC-Q101, Stealth™ | Standard | 600V | 30A | 2.4V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |