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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 526/1165
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Sanken |
DIODE GEN PURP 600V 1A AXIAL |
5,148 |
|
- | Standard | 600V | 1A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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|
Sanken |
DIODE GEN PURP 200V 1A AXIAL |
5,364 |
|
- | Standard | 200V | 1A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
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|
Sanken |
DIODE GEN PURP 200V 1A AXIAL |
2,574 |
|
- | Standard | 200V | 1A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
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|
Sanken |
DIODE GEN PURP 600V 1.5A AXIAL |
2,124 |
|
- | Standard | 600V | 1.5A | 1.5V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 600V 1.5A AXIAL |
5,742 |
|
- | Standard | 600V | 1.5A | 1.5V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 400V 1.5A AXIAL |
5,346 |
|
- | Standard | 400V | 1.5A | 1.5V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 400V 1.5A AXIAL |
2,304 |
|
- | Standard | 400V | 1.5A | 1.5V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 500V 1A SJP |
3,418 |
|
- | Standard | 500V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 500V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
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|
Sanken |
DIODE SCHOTTKY SMD |
2,124 |
|
- | Schottky | 60V | 3A | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 60V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY SMD |
2,016 |
|
- | Schottky | 40V | 2A | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 40V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 2A 2SMD |
5,472 |
|
- | Standard | 200V | 2A | 980mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 200V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 400V 2A 2SMD |
7,236 |
|
- | Standard | 400V | 2A | 1.1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 400V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 1.5A 2SMD |
4,842 |
|
- | Standard | 200V | 1.5A | 980mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 200V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCH 1.2KV 250MA SOD57 |
7,848 |
|
- | Avalanche | 1200V | 250mA (DC) | 2.4V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 2µA @ 1000V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCH 1.2KV 250MA SOD57 |
3,780 |
|
- | Avalanche | 1200V | 250mA (DC) | 2.4V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 2µA @ 1000V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 60V 3A SJP |
7,794 |
|
- | Schottky | 60V | 3A | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 60V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 40V 2A SJP |
5,472 |
|
- | Schottky | 40V | 2A | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 40V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 2A SJP |
6,336 |
|
- | Standard | 200V | 2A | 980mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 200V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 400V 2A SJP |
7,758 |
|
- | Standard | 400V | 2A | 1.1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 400V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 1.5A SJP |
5,184 |
|
- | Standard | 200V | 1.5A | 980mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 200V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SBR 60V 5A POWERDI5 |
8,316 |
|
- | Super Barrier | 60V | 5A | 600mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 220µA @ 60V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SBR 60V 5A POWERDI5 |
6,570 |
|
- | Super Barrier | 60V | 5A | 600mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 220µA @ 60V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 150V 10A TO277A |
6,570 |
|
eSMP®, TMBS® | Schottky | 150V | 10A | 1.08V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 150V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 150V 10A TO277A |
8,334 |
|
eSMP®, TMBS® | Schottky | 150V | 10A | 1.08V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 150V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 4A TO277A |
3,060 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 100V | 4A | 930mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 4V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A TO277A |
8,046 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 200V | 4A | 930mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 200V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 5A DO214AB |
7,578 |
|
Automotive, AEC-Q101 | Schottky | 40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 5A DO214AB |
5,130 |
|
Automotive, AEC-Q101 | Schottky | 60V | 5A | 750mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY DPAK |
7,002 |
|
- | Schottky | 60V | 3.5A | 610mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 60V | 145pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY DPAK |
7,506 |
|
- | Schottky | 60V | 3.5A | 610mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 60V | 145pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |