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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
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제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 7A TO277A |
8,910 |
|
eSMP® | Schottky | 50V | 7A | 550mV @ 7A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 50V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 2.1A DO214AC |
6,894 |
|
- | Schottky | 40V | 2.1A | 690mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 38pF @ 10V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 2A DO214AC |
8,964 |
|
- | Schottky | 60V | 2A | 780mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 31pF @ 10V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 6A R-6 |
3,276 |
|
- | Standard | 100V | 6A | 1V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 100V | 80pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
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|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 6A R-6 |
4,878 |
|
- | Standard | 200V | 6A | 1V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | 80pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 6A R-6 |
3,060 |
|
- | Standard | 300V | 6A | 1V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 80pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 6A R-6 |
5,886 |
|
- | Standard | 400V | 6A | 1.3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 80pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 6A R-6 |
8,982 |
|
- | Standard | 600V | 6A | 1.7V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 65pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 6A R-6 |
2,286 |
|
- | Standard | 100V | 6A | 1V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 100V | 80pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A TO277A |
8,730 |
|
Automotive, AEC-Q101, eSMP® | Standard | 100V | 2A | 1.05V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 100V | 21pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 2A TO277A |
2,484 |
|
Automotive, AEC-Q101, eSMP® | Standard | 150V | 2A | 1.05V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 150V | 21pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 8A DO201AD |
3,474 |
|
Automotive, AEC-Q101 | Schottky | 100V | 8A | 920mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
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|
Rohm Semiconductor |
DIODE SCHOTTKY 40V 3A PMDT |
8,550 |
|
- | Schottky | 40V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Surface Mount | SOD-128 | PMDT | 150°C (Max) |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 120V 3.9A TO277A |
2,556 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 120V | 3.9A | 830mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 120V 3.9A TO277A |
8,244 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 120V | 3.9A | 830mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 5A 200V TO-263AB |
8,316 |
|
- | Schottky | 200V | 5A | 1.6V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -40°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A ITO220AC |
2,718 |
|
- | Standard | 600V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 5µA @ 600V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 10A TO277A |
7,722 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 60V | 10A | 590mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.9mA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 10A TO277A |
2,268 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 80V | 10A | 680mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 80V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
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Diodes Incorporated |
DIODE GEN PURP 1KV 1A MELF |
5,760 |
|
- | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 15pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | MELF | -55°C ~ 150°C |
|
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|
Comchip Technology |
DIODE SCHOTTKY 40V 5A DO201AD |
4,140 |
|
- | Schottky | 40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 350pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 5A 200V TO-220AC |
2,142 |
|
TMBS® | Schottky | 200V | 5A | 1.6V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 30V 5A PMDS |
4,068 |
|
- | Schottky | 30V | 5A | 490mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 30V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
|
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 5A PMDS |
3,508 |
|
- | Schottky | 40V | 5A | 530mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
|
|
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Rohm Semiconductor |
DIODE SCHOTTKY 60V 5A PMDS |
3,798 |
|
- | Schottky | 60V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 60V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 10A TO220AC |
5,094 |
|
- | Schottky | 100V | 10A | 850mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 12A DO201AD |
8,028 |
|
- | Schottky | 20V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 12A DO201AD |
4,140 |
|
Automotive, AEC-Q101 | Schottky | 20V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 12A DO201AD |
5,562 |
|
- | Schottky | 30V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 12A DO201AD |
7,506 |
|
Automotive, AEC-Q101 | Schottky | 30V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |