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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 562/1165
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCH 1KV 1.6A TO277A |
8,118 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 1000V | 1.6A | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 800V | 34pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.6A TO277A |
8,604 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 200V | 1.6A | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 200V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.6A TO277A |
6,984 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 200V | 1.6A | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 200V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.6A TO277A |
7,128 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 400V | 1.6A | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.6A TO277A |
7,902 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 400V | 1.6A | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.6A TO277A |
2,772 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 600V | 1.6A | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.6A TO277A |
5,076 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 600V | 1.6A | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.3A TO277A |
5,868 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 800V | 1.3A | 2.5V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 29pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.3A TO277A |
3,114 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 800V | 1.3A | 2.5V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 29pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCH 1KV 1.3A TO277A |
6,156 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 1000V | 1.3A | 2.5V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 29pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCH 1KV 1.3A TO277A |
5,148 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 1000V | 1.3A | 2.5V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 29pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Nexperia |
DIODE SCHOTTKY 45V 15A CFP15 |
5,112 |
|
Automotive, AEC-Q101 | Schottky | 45V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 100µA @ 45V | 800pF @ 10V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | CFP15 | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A DPAK |
3,258 |
|
- | Standard | 1000V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1000V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A DPAK |
7,812 |
|
- | Standard | 1000V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1000V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A DPAK |
4,086 |
|
- | Standard | 1000V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1000V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A DPAK |
6,318 |
|
- | Standard | 1000V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1000V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 150V 15A TO277A |
7,452 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 150V | 15A | 1.08V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 150V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 150V 15A TO277A |
3,672 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 150V | 15A | 1.08V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 150V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 6.4A TO277A |
5,634 |
|
eSMP®, TMBS® | Schottky | 60V | 6.4A | 590mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 6mA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A DPAK |
7,236 |
|
FRED Pt® | Standard | 600V | 8A | 2.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A DPAK |
4,464 |
|
FRED Pt® | Standard | 600V | 8A | 2.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A D-PAK |
6,174 |
|
FRED Pt® | Standard | 600V | 8A | 2.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A D-PAK |
3,580 |
|
FRED Pt® | Standard | 600V | 8A | 2.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A D-PAK |
8,352 |
|
FRED Pt® | Standard | 600V | 8A | 2.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A D-PAK |
3,294 |
|
FRED Pt® | Standard | 600V | 8A | 2.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A D-PAK |
5,292 |
|
FRED Pt® | Standard | 600V | 8A | 3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 17ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A D-PAK |
6,264 |
|
- | Standard | 600V | 8A | 3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 17ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1000V 25A P2500 |
2,754 |
|
- | Standard | - | 25A | 870mV @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 45V 20A 5DFN |
6,102 |
|
- | Schottky | 45V | 20A | 640mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 45V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 8A TO263AB |
6,732 |
|
- | Schottky | 100V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |