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필터보기
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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 79/1165
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
DIODE GEN PURP 800V 4A SMC |
53,928 |
|
SWITCHMODE™ | Standard | 800V | 4A | 1.85V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 25µA @ 800V | - | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE SBR 60V 20A POWERDI5 |
52,992 |
|
Automotive, AEC-Q101 | Super Barrier | 60V | 20A | 570mV @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 180µA @ 60V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 3A SOD64 |
18,966 |
|
- | Avalanche | 800V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 7.5µs | 1µA @ 800V | 60pF @ 4V, 1MHz | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 6A DO201AD |
24,654 |
|
- | Standard | 600V | 6A | 1.7V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 50pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
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STMicroelectronics |
DIODE SCHOTTKY 45V 10A DPAK |
44,580 |
|
- | Schottky | 45V | 10A | 630mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 7A TO277A |
255,942 |
|
eSMP® | Schottky | 60V | 7A | 550mV @ 7A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1500V 3A SOD64 |
244,356 |
|
- | Avalanche | 1500V | 3A | 1.5V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 20µs | 5µA @ 1500V | - | Through Hole | SOD-64, Axial | SOD-64 | 140°C (Max) |
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Diodes Incorporated |
DIODE GEN PURP 600V 3A SMB |
28,812 |
|
- | Standard | 600V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
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Micro Commercial Co |
DIODE SCHOTTKY 45V 10A R6 |
21,444 |
|
- | Schottky | 45V | 10A | 550mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | - | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 3.0A SMC |
31,464 |
|
- | Schottky | 40V | 3A | 530mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 230pF @ 5V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 150°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 200V 2A AXIAL |
24,102 |
|
SWITCHMODE™ | Standard | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 8A 60V DO-214AB |
19,116 |
|
- | Schottky | 60V | 8A | 750mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 3A SOD64 |
96,762 |
|
- | Avalanche | 1000V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 1000V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
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|
Diodes Incorporated |
DIODE SBR 60V 20A POWERDI5 |
21,858 |
|
TrenchSBR | Super Barrier | 60V | 20A | 570mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 180µA @ 60V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
141,030 |
|
- | Standard | 200V | 3A | 875mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
25,902 |
|
Automotive, AEC-Q101 | Standard | 200V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 200V | 70pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 30V 1A AXIAL |
28,800 |
|
- | Schottky | 30V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 3A SOD64 |
62,142 |
|
- | Avalanche | 1000V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 7.5µs | 1µA @ 1000V | 60pF @ 4V, 1MHz | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Micro Commercial Co |
DIODE GEN PURP 600V 6A DO214AB |
24,348 |
|
- | Standard | 600V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 150pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 600V 5A DO201AD |
26,886 |
|
- | Standard | 600V | 5A | 1.3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 5µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 20A TO277A |
283,230 |
|
- | Schottky | 60V | 20A | 580mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 300V 10A DPAK |
4,083 |
|
ECOPACK®2 | Standard | 300V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
|
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STMicroelectronics |
DIODE SCHOTTKY 30V 8A DPAK |
60,498 |
|
- | Schottky | 30V | 8A | 490mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 150°C (Max) |
|
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ON Semiconductor |
DIODE SCHOTTKY 30V 3A DO201AD |
32,460 |
|
- | Schottky | 30V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 30V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
|
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ON Semiconductor |
DIODE SCHOTTKY 20V 1A AXIAL |
16,656 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 125°C |
|
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ON Semiconductor |
DIODE SCHOTTKY 20V 3A DO201AD |
16,314 |
|
- | Schottky | 20V | 3A | 475mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 20V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
|
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ON Semiconductor |
DIODE SCHOTTKY 40V 3A DO201AD |
14,592 |
|
- | Schottky | 40V | 3A | 525mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 40V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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Diodes Incorporated |
DIODE SBR 45V 10A DO201AD |
12,276 |
|
SBR® | Super Barrier | 45V | 10A | 470mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 45V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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|
STMicroelectronics |
DIODE GEN PURP 200V 8A DPAK |
21,432 |
|
- | Standard | 200V | 8A | 1.05V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 6µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
|
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ON Semiconductor |
DIODE GEN PURP 1KV 3A DO201AD |
152,460 |
|
- | Standard | 1000V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 150°C |