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이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
SR505-T
Diodes Incorporated
DIODE SCHOTTKY 50V 5A DO201AD
3,510
-
Schottky
50V
5A
670mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 50V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
SR506-T
Diodes Incorporated
DIODE SCHOTTKY 60V 5A DO201AD
5,814
-
Schottky
60V
5A
670mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 60V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
RURG30100
ON Semiconductor
DIODE GEN PURP 1KV 30A TO247
5,706
-
Standard
1000V
30A
1.8V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
250µA @ 1000V
-
Through Hole
TO-247-2
TO-247-2
-
RURG30120
ON Semiconductor
DIODE GEN PURP 1.2KV 30A TO247
5,760
-
Standard
1200V
30A
2.1V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
250µA @ 1200V
-
Through Hole
TO-247-2
TO-247-2
-65°C ~ 175°C
RURP15100
ON Semiconductor
DIODE GEN PURP 1KV 15A TO220AC
4,212
-
Standard
1000V
15A
1.8V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
125ns
100µA @ 1000V
-
Through Hole
TO-220-2
TO-220-2L
-65°C ~ 175°C
RURU10060
ON Semiconductor
DIODE GEN PURP 600V 100A TO218
5,436
-
Standard
600V
100A
1.6V @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
250µA @ 600V
-
Through Hole
TO-218-1
TO-218
-65°C ~ 175°C
RURU15060
ON Semiconductor
DIODE GEN PURP 600V 150A TO218
2,484
-
Standard
600V
150A
1.6V @ 150A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
250µA @ 600V
-
Through Hole
TO-218-1
TO-218
-65°C ~ 175°C
RURU8060
ON Semiconductor
DIODE GEN PURP 600V 80A TO218
2,520
-
Standard
600V
80A
1.6V @ 80A
Fast Recovery =< 500ns, > 200mA (Io)
85ns
250µA @ 600V
-
Through Hole
TO-218-1
TO-218
-
BAS16
ON Semiconductor
DIODE GEN PURP 85V 200MA SOT23-3
6,120
-
Standard
85V
200mA
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
6ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
-55°C ~ 150°C
BAS21
ON Semiconductor
DIODE GEN PURP 250V 200MA SOT23
6,246
-
Standard
250V
200mA
1.25V @ 200mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 200V
5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
150°C (Max)
BAT54
ON Semiconductor
DIODE SCHOTTKY 30V 200MA SOT23-3
4,914
-
Schottky
30V
200mA
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
-55°C ~ 150°C
MMBD4148
ON Semiconductor
DIODE GEN PURP 100V 200MA SOT23
3,798
-
Standard
100V
200mA
1V @ 10mA
Small Signal =< 200mA (Io), Any Speed
4ns
5µA @ 75V
4pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
150°C (Max)
1N4937L
Diodes Incorporated
DIODE GEN PURP 600V 1A DO41
2,178
-
Standard
600V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
CMS01(TE12L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 3A MFLAT
7,038
-
Schottky
30V
3A
370mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
5mA @ 30V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 125°C
CMS02(TE12L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 3A MFLAT
6,768
-
Schottky
30V
3A
400mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 125°C
CMS03(TE12L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 3A MFLAT
6,804
-
Schottky
30V
3A
450mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CMS04(TE12L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 5A MFLAT
5,508
-
Schottky
30V
5A
370mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
8mA @ 30V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 125°C
CMS09(TE12L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1A MFLAT
8,874
-
Schottky
30V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CMS11(TE12L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 2A MFLAT
7,344
-
Schottky
40V
2A
550mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CRH01(TE85L)
Toshiba Semiconductor and Storage
DIODE GEN PURP 200V 1A SFLAT
7,902
-
Standard
200V
1A
980mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C
CRS01(TE85L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1A SFLAT
5,580
-
Schottky
30V
1A
360mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5mA @ 30V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 125°C
CRS04(TE85L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 1A SFLAT
5,796
-
Schottky
40V
1A
510mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C
CRS08(TE85L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1.5A SFLAT
2,484
-
Schottky
30V
1.5A
360mV @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 125°C
CRS09(TE85L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1.5A SFLAT
7,632
-
Schottky
30V
1.5A
460mV @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 30V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C
CRS11(TE85L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1A SFLAT
6,408
-
Schottky
30V
1A
360mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5mA @ 30V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 125°C
BAS21T-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT523
2,934
-
Standard
200V
200mA
1.25V @ 200mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 200V
5pF @ 0V, 1MHz
Surface Mount
SOT-523
SOT-523
-65°C ~ 150°C
BAS116T-7
Diodes Incorporated
DIODE GEN PURP 85V 215MA SOT523
5,004
-
Standard
85V
215mA (DC)
1.25V @ 150mA
Standard Recovery >500ns, > 200mA (Io)
3µs
5nA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SOT-523
SOT-523
-65°C ~ 150°C
BAV116W-7
Diodes Incorporated
DIODE GEN PURP 130V 215MA SOD123
6,318
-
Standard
130V
215mA (DC)
1.25V @ 150mA
Standard Recovery >500ns, > 200mA (Io)
3µs
5nA @ 75V
5pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-65°C ~ 150°C
MBRD835L-T
Diodes Incorporated
DIODE SCHOTTKY 35V 8A DPAK
7,380
-
Schottky
35V
8A
510mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.4mA @ 35V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-65°C ~ 125°C
MBRD1040-T
Diodes Incorporated
DIODE SCHOTTKY 40V 10A DPAK
7,524
-
Schottky
40V
10A
510mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 35V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-65°C ~ 150°C