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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 942/1165
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
DLM10E-AT1
ON Semiconductor
DIODE GEN PURP 400V 1A DO204AL
2,898
-
Standard
400V
1A
980mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Through Hole
DO-204AL, DO-41, Axial
-
150°C (Max)
DLN10C-AT1
ON Semiconductor
DIODE GEN PURP 200V 1A AXIAL
3,546
-
Standard
200V
1A
980mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Through Hole
R-1, Axial
-
150°C (Max)
DLN10C-BT
ON Semiconductor
DIODE GEN PURP 200V 1A AXIAL
4,320
-
Standard
200V
1A
980mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Through Hole
R-1, Axial
-
150°C (Max)
DSE010-TR-E
ON Semiconductor
DIODE GEN PURP 80V 100MA
5,526
-
Standard
80V
100mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
500nA @ 80V
3pF @ 0.5V, 1MHz
-
-
-
-55°C ~ 125°C
DSF10TB-AT1
ON Semiconductor
DIODE GEN PURP 100V 1A DO204AL
5,166
-
Standard
100V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
-
Through Hole
DO-204AL, DO-41, Axial
-
150°C (Max)
DSF10TB-BT
ON Semiconductor
DIODE GEN PURP 100V 1A DO204AL
2,124
-
Standard
100V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
-
Through Hole
DO-204AL, DO-41, Axial
-
150°C (Max)
DSF10TC-AT1
ON Semiconductor
DIODE GEN PURP 200V 1A DO204AL
7,488
-
Standard
200V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 200V
-
Through Hole
DO-204AL, DO-41, Axial
-
150°C (Max)
DSF10TC-BT
ON Semiconductor
DIODE GEN PURP 200V 1A DO204AL
2,322
-
Standard
200V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 200V
-
Through Hole
DO-204AL, DO-41, Axial
-
150°C (Max)
DSK10B-AT1
ON Semiconductor
DIODE GEN PURP 100V 1A AXIAL
2,916
-
Standard
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
-
Through Hole
Axial
-
150°C (Max)
DSK10B-BT
ON Semiconductor
DIODE GEN PURP 100V 1A AXIAL
7,092
-
Standard
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
-
Through Hole
Axial
-
150°C (Max)
DSK10C-AT1
ON Semiconductor
DIODE GEN PURP 200V 1A AXIAL
2,592
-
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 200V
-
Through Hole
R-1, Axial
-
150°C (Max)
DSK10C-BT
ON Semiconductor
DIODE GEN PURP 200V 1A AXIAL
5,508
-
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 200V
-
Through Hole
R-1, Axial
-
150°C (Max)
DSK10C-ET1
ON Semiconductor
DIODE GEN PURP 200V 1A AXIAL
2,376
-
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 200V
-
Through Hole
R-1, Axial
-
150°C (Max)
DSK10E-AT1
ON Semiconductor
DIODE GEN PURP 400V 1A AXIAL
6,768
-
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Through Hole
R-1, Axial
-
150°C (Max)
DSK10E-BT
ON Semiconductor
DIODE GEN PURP 400V 1A AXIAL
2,934
-
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Through Hole
R-1, Axial
-
150°C (Max)
DSK10E-ET1
ON Semiconductor
DIODE GEN PURP 400V 1A AXIAL
7,560
-
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Through Hole
R-1, Axial
-
150°C (Max)
RD0106T-TL-H
ON Semiconductor
DIODE GEN PURP 600V 1A TPFA
8,028
-
Standard
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TP-FA
150°C (Max)
RD0504T-TL-H
ON Semiconductor
DIODE GEN PURP 400V 5A TPFA
2,100
-
Standard
400V
5A
1.5V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
20µA @ 400V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TP-FA
150°C (Max)
RD0506T-TL-H
ON Semiconductor
DIODE GEN PURP 600V 5A TPFA
6,876
-
Standard
600V
5A
1.6V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
50µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TP-FA
150°C (Max)
SB10-03A2-AT1
ON Semiconductor
DIODE SCHOTTKY 30V 1A DO41
4,716
-
Schottky
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1mA @ 30V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
150°C (Max)
SB10-03A2-BT
ON Semiconductor
DIODE SCHOTTKY 30V 1A DO41
2,862
-
Schottky
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1mA @ 30V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
150°C (Max)
SB10-03A3-AT1
ON Semiconductor
DIODE SCHOTTKY 30V 1A DO41
7,578
-
Schottky
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1mA @ 30V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
125°C (Max)
SB10-03A3-BT
ON Semiconductor
DIODE SCHOTTKY 30V 1A DO41
6,192
-
Schottky
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1mA @ 30V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
125°C (Max)
SB10-04A3-AT1
ON Semiconductor
DIODE SCHOTTKY 40V 1A DO41
7,470
-
Schottky
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 40V
45pF @ 10V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
125°C (Max)
SB10-04A3-BT
ON Semiconductor
DIODE SCHOTTKY 40V 1A DO41
8,622
-
Schottky
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 40V
45pF @ 10V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
125°C (Max)
SB10-05A2-AT1
ON Semiconductor
DIODE SCHOTTKY 50V 1A DO41
6,966
-
Schottky
50V
1A
580mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1mA @ 50V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
125°C (Max)
SB10-05A2-BT
ON Semiconductor
DIODE SCHOTTKY 50V 1A DO41
6,876
-
Schottky
50V
1A
580mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1mA @ 50V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
125°C (Max)
SB10-05A3-AT1
ON Semiconductor
DIODE SCHOTTKY 50V 1A DO41
7,686
-
Schottky
50V
1A
580mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1mA @ 50V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
125°C (Max)
SB10-05A3-BT
ON Semiconductor
DIODE SCHOTTKY 50V 1A DO41
5,364
-
Schottky
50V
1A
580mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1mA @ 50V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
125°C (Max)
SB11-04HP-TR-E
ON Semiconductor
DIODE SCHOTTKY 40V 1.1A 2SMD
6,750
-
Schottky
40V
1.1A
550mV @ 1.1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
-
Surface Mount
2-SMD, J-Lead
SMD
125°C (Max)