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카테고리반도체 / 메모리 IC / 기억
기록 46,590
페이지 445/1553
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 메모리 유형 | 메모리 포맷 | 기술 | 메모리 크기 | 메모리 인터페이스 | 시계 주파수 | 쓰기주기 시간-단어, 페이지 | 접근 시간 | 전압-공급 | 작동 온도 | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 |
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Micron Technology Inc. |
IC FLASH 4G PARALLEL 63VFBGA |
7,128 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 4Gb (512M x 8) | Parallel | - | - | - | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA (9x11) |
|
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Cypress Semiconductor |
IC NOR |
5,994 |
|
Automotive, AEC-Q100, FL-L | Non-Volatile | FLASH | FLASH - NOR | 256Mb (32M x 8) | SPI - Quad I/O, QPI | 133MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
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Cypress Semiconductor |
IC 256 MB FLASH MEMORY |
5,328 |
|
Automotive, AEC-Q100, FL-L | Non-Volatile | FLASH | FLASH - NOR | 256Mb (32M x 8) | SPI - Quad I/O, QPI | 66MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 100TQFP |
6,246 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 4.5Mb (128K x 36) | Parallel | - | - | 10ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 100TQFP |
6,084 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 4.5Mb (128K x 36) | Parallel | - | - | 8ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 144LFBGA |
6,966 |
|
- | Volatile | DRAM | SDRAM - DDR | 128Mb (4M x 32) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 144-LFBGA | 144-LFBGA (12x12) |
|
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 48VFBGA |
3,400 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 8Mb (512K x 16) | Parallel | - | 55ns | 55ns | 1.65V ~ 2.2V | -40°C ~ 85°C (TA) | Surface Mount | 48-VFBGA | 48-VFBGA (6x8) |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 54TSOP |
7,074 |
|
- | Volatile | DRAM | SDRAM | 128Mb (8M x 16) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 54TSOP |
2,700 |
|
- | Volatile | DRAM | SDRAM | 128Mb (8M x 16) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
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Everspin Technologies Inc. |
IC RAM 256K PARALLEL 48FBGA |
8,586 |
|
- | Non-Volatile | RAM | MRAM (Magnetoresistive RAM) | 256Kb (32K x 8) | Parallel | - | 45ns | 45ns | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-LFBGA | 48-FBGA (8x8) |
|
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Micron Technology Inc. |
IC DRAM LPDDR4 WFBGA |
6,606 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Micron Technology Inc. |
IC DRAM LPDDR4 WFBGA |
8,082 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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IDT, Integrated Device Technology |
IC SRAM 4M PARALLEL 44SOJ |
3,924 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 12ns | 12ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 44-BSOJ (0.400", 10.16mm Width) | 44-SOJ |
|
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IDT, Integrated Device Technology |
IC SRAM 4M PARALLEL 36SOJ |
3,600 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (512K x 8) | Parallel | - | 10ns | 10ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 36-BSOJ (0.400", 10.16mm Width) | 36-SOJ |
|
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IDT, Integrated Device Technology |
IC SRAM 4M PARALLEL 36SOJ |
5,850 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (512K x 8) | Parallel | - | 12ns | 12ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 36-BSOJ (0.400", 10.16mm Width) | 36-SOJ |
|
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IDT, Integrated Device Technology |
IC SRAM 4M PARALLEL 36SOJ |
5,940 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (512K x 8) | Parallel | - | 15ns | 15ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 36-BSOJ (0.400", 10.16mm Width) | 36-SOJ |
|
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IDT, Integrated Device Technology |
IC SRAM 4M PARALLEL 44SOJ |
8,802 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 10ns | 10ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 44-BSOJ (0.400", 10.16mm Width) | 44-SOJ |
|
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IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 28SOJ |
4,518 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 20ns | 20ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 28-BSOJ (0.300", 7.62mm Width) | 28-SOJ |
|
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IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 28SOJ |
6,714 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 25ns | 25ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 28-BSOJ (0.300", 7.62mm Width) | 28-SOJ |
|
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IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 28SOJ |
5,472 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 35ns | 35ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 28-BSOJ (0.300", 7.62mm Width) | 28-SOJ |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 333MHZ |
5,040 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 512Mb (32M x 16) | Parallel | 333MHz | 15ns | 450ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 84-TFBGA | 84-WBGA (8x12.5) |
|
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IDT, Integrated Device Technology |
IC SRAM 4M PARALLEL 48CABGA |
3,780 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 10ns | 10ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFBGA | 48-CABGA (9x9) |
|
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IDT, Integrated Device Technology |
IC SRAM 4M PARALLEL 48CABGA |
4,032 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 12ns | 12ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFBGA | 48-CABGA (9x9) |
|
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IDT, Integrated Device Technology |
IC SRAM 4M PARALLEL 48CABGA |
7,524 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 12ns | 12ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFBGA | 48-CABGA (9x9) |
|
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IDT, Integrated Device Technology |
IC SRAM 4M PARALLEL 48CABGA |
5,580 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 15ns | 15ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFBGA | 48-CABGA (9x9) |
|
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IDT, Integrated Device Technology |
IC SRAM 4M PARALLEL 48CABGA |
6,246 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 15ns | 15ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFBGA | 48-CABGA (9x9) |
|
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Cypress Semiconductor |
IC SRAM 4M PARALLEL |
8,154 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 15ns | 15ns | 1.65V ~ 2.2V | -40°C ~ 85°C (TA) | Surface Mount | 48-VFBGA | 48-VFBGA (6x8) |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 66TSOP II |
6,930 |
|
- | Volatile | DRAM | SDRAM - DDR | 256Mb (16M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
|
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 100TQFP |
8,838 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (128K x 36) | Parallel | 133MHz | - | 4.2ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 100TQFP |
5,166 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (128K x 36) | Parallel | 100MHz | - | 8ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |