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카테고리반도체 / 메모리 IC / 기억
기록 46,590
페이지 552/1553
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 메모리 유형 | 메모리 포맷 | 기술 | 메모리 크기 | 메모리 인터페이스 | 시계 주파수 | 쓰기주기 시간-단어, 페이지 | 접근 시간 | 전압-공급 | 작동 온도 | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 100TQFP |
7,902 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 9Mb (512K x 18) | Parallel | 150MHz | - | 3.8ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
2,556 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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|
Cypress Semiconductor |
IC 1 GB FLASH MEMORY |
3,582 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
Cypress Semiconductor |
IC NOR |
3,600 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 18M PARALLEL 100LQFP |
7,740 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 18Mb (512K x 36) | Parallel | 133MHz | - | 6.5ns | 2.375V ~ 2.625V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
|
|
|
Micron Technology Inc. |
IC FLASH 64G MMC 153TFBGA |
3,474 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 64Gb (8G x 8) | MMC | - | - | - | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 153-TFBGA | 153-TFBGA (11.5x13) |
|
|
|
Micron Technology Inc. |
IC FLASH 64G MMC 100LBGA |
8,784 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 64Gb (8G x 8) | MMC | - | - | - | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LBGA | 100-LBGA (14x18) |
|
|
|
Micron Technology Inc. |
IC FLASH 64G MMC 100LBGA |
8,640 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 64Gb (8G x 8) | MMC | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LBGA | 100-LBGA (14x18) |
|
|
|
Micron Technology Inc. |
IC FLASH 64G MMC |
5,922 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 64Gb (8G x 8) | MMC | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 153-TFBGA | 153-TFBGA (11.5x13) |
|
|
|
Micron Technology Inc. |
MODULE EMMC 153TFBGA |
2,358 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 64Gb (8G x 8) | MMC | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 153-TFBGA | 153-TFBGA (11.5x13) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 96TWBGA |
4,896 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 4Gb (256M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 96TWBGA |
6,732 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 4Gb (256M x 16) | Parallel | 667MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 64TQFP |
7,128 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 25ns | 25ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (14x14) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 44TSOP II |
7,038 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 8Mb (512K x 16) | Parallel | - | 10ns | 10ns | 2.4V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 44TSOP II |
2,664 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 8Mb (1M x 8) | Parallel | - | 10ns | 10ns | 2.4V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 64TQFP |
4,482 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 20ns | 20ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (10x10) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 64TQFP |
3,222 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 25ns | 25ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (10x10) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA |
2,574 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 512Mb (16M x 32) | Parallel | 166MHz | 12ns | 5.5ns | 1.7V ~ 1.95V | -40°C ~ 105°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 44TSOP II |
7,344 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 8Mb (1M x 8) | Parallel | - | 10ns | 10ns | 2.4V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 44TSOP II |
3,888 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 8Mb (512K x 16) | Parallel | - | 10ns | 10ns | 2.4V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
|
Micron Technology Inc. |
IC RAM 8G PARALLEL 1.75GHZ |
3,472 |
|
- | Volatile | RAM | SGRAM - GDDR6 | 8Gb (256M x 32) | Parallel | 1.75GHz | - | - | 1.31V ~ 1.39V | 0°C ~ 95°C (TC) | Sub-Base Mount | 180-TFBGA | 180-FBGA (12x14) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 86TSOP II |
3,942 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 167MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
5,850 |
|
- | Volatile | DRAM | SDRAM | 512Mb (64M x 8) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 52PLCC |
6,048 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 20ns | 20ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 52PLCC |
4,320 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 20ns | 20ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) |
|
|
|
Cypress Semiconductor |
IC SRAM 16M PARALLEL 119PBGA |
5,058 |
|
MoBL® | Volatile | SRAM | SRAM - Asynchronous | 16Mb (512K x 32) | Parallel | - | 55ns | 55ns | 1.65V ~ 2.2V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
|
|
|
Cypress Semiconductor |
IC SRAM 16M PARALLEL 119PBGA |
2,412 |
|
MoBL® | Volatile | SRAM | SRAM - Asynchronous | 16Mb (512K x 32) | Parallel | - | 45ns | 45ns | 1.65V ~ 2.2V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 165CABGA |
6,426 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 9Mb (256K x 36) | Parallel | 100MHz | - | 5ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 165CABGA |
8,298 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 9Mb (256K x 36) | Parallel | 150MHz | - | 3.8ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 165CABGA |
5,400 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 9Mb (256K x 36) | Parallel | - | - | 7.5ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |