트랜지스터-FET, MOSFET-RF
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-RF
기록 3,043
페이지 23/102
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 트랜지스터 유형 | 주파수 | 이득 | 전압-테스트 | 전류 정격 (Amps) | 소음 수치 | 현재-테스트 | 전원-출력 | 전압-정격 | 패키지 / 케이스 | 공급자 장치 패키지 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXP |
FET RF 125V 2.5GHZ NI360 |
669 |
|
- | HEMT | 2.5GHz | 18dB | 50V | - | - | 350mA | 125W | 125V | NI-360H-2SB | NI-360H-2SB |
|
|
|
NXP |
FET RF 110V 1.03GHZ NI-780S |
7,092 |
|
- | LDMOS | 1.03GHz | 19.7dB | 50V | - | - | 200mA | 500W | 110V | SOT-957A | NI-780H-2L |
|
|
|
Cree/Wolfspeed |
IC AMP RF LDMOS H-36275-4 |
4,248 |
|
- | LDMOS | 1.2GHz ~ 1.4GHz | 16dB | 50V | 10µA | - | 150mA | 700W | 105V | H-36275-4 | H-36275-4 |
|
|
|
NXP |
MRF100AN REFERENCE BOARD - 81MHZ |
7,254 |
|
- | - | - | - | - | - | - | - | - | - | TO-220-3 | TO-220-3 |
|
|
|
NXP |
MRF100AN REFERENCE BRD - 233MHZ |
6,120 |
|
- | - | - | - | - | - | - | - | - | - | TO-220-3 | TO-220-3 |
|
|
|
NXP |
TRANS 1030MHZ 1550W PEAK 50V |
7,290 |
|
- | LDMOS (Dual) | 1.03GHz | 18.2dB | 50V | - | - | 100mA | 1300W | 105V | SOT-979A | NI-1230-4H |
|
|
|
NXP |
FET RF 2CH 110V 225MHZ NI-1230 |
5,994 |
|
- | LDMOS (Dual) | 225MHz | 24dB | 50V | - | - | 150mA | 1000W | 110V | NI-1230 | NI-1230 |
|
|
|
NXP |
MRF13750H-915MHZ |
4,842 |
|
- | LDMOS (Dual) | 700MHz ~ 1.3GHz | 20.6dB | 50V | 10µA | - | - | 650W | 105V | SOT-979A | NI-1230-4H |
|
|
|
STMicroelectronics |
FET RF 40V 870MHZ |
140 |
|
- | LDMOS | 870MHz | 17dB | 13.6V | 2A | - | 50mA | 4W | 40V | TO-243AA | SOT-89 |
|
|
|
STMicroelectronics |
TRANS RF N-CH FET POWERSO-10RF |
7,434 |
|
- | LDMOS | 500MHz | 14dB | 12.5V | 5A | - | 150mA | 15W | 40V | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | PowerSO-10RF (Formed Lead) |
|
|
|
IXYS-RF |
RF MOSFET N-CHANNEL DE275 |
3,366 |
|
DE | N-Channel | - | - | - | 8A | - | - | 590W | 1000V | 6-SMD, Flat Lead Exposed Pad | DE275 |
|
|
|
IXYS-RF |
RF MOSFET N-CHANNEL DE475 |
8,400 |
|
DE | N-Channel | - | - | - | 24A | - | - | 1800W | 1000V | 6-SMD, Flat Lead Exposed Pad | DE475 |
|
|
|
Cree/Wolfspeed |
RF MOSFET HEMT 28V 440166 |
3,978 |
|
GaN | HEMT | 8GHz | 16.5dB | 28V | - | - | 100mA | - | 120V | 440166 | 440166 |
|
|
|
Microsemi |
MOSFET RF PWR N-CH 28V 150W M174 |
8,100 |
|
- | N-Channel | 30MHz | 20dB | 28V | 20A | - | 250mA | 150W | 80V | M174 | M174 |
|
|
|
Cree/Wolfspeed |
RF MOSFET HEMT 28V DIE |
8,082 |
|
GaN | HEMT | 8GHz | 16.5dB | 28V | - | - | 200mA | 30W | 84V | Die | Die |
|
|
|
Cree/Wolfspeed |
RF MOSFET HEMT 28V 440166 |
8,406 |
|
GaN | HEMT | 4.5GHz ~ 6GHz | 11dB | 28V | - | - | 250mA | 30W | 84V | 440166 | 440166 |
|
|
|
Cree/Wolfspeed |
RF MOSFET HEMT 28V 440193 |
3,330 |
|
GaN | HEMT | 4GHz | 16dB | 28V | - | - | 400mA | - | 120V | 440193 | 440193 |
|
|
|
Microsemi |
MOSFET RF N-CH 500V 60A T1 |
7,524 |
|
- | N-Channel | 27.12MHz | 19dB | 125V | 60A | - | - | 750W | 500V | T-1 | T-1 |
|
|
|
Cree/Wolfspeed |
RF MOSFET HEMT 50V 440217 |
2,538 |
|
GaN | HEMT | 2.7GHz ~ 3.1GHz | 13.5dB | 50V | 24A | - | 500mA | 500W | 125V | 440217 | 440217 |
|
|
|
Toshiba Semiconductor and Storage |
JFET N-CH SOT23 |
5,022 |
|
- | N-Channel JFET | 1kHz | - | 10V | - | 1dB | 500µA | - | - | TO-236-3, SC-59, SOT-23-3 | SC-59 |
|
|
|
STMicroelectronics |
FET RF 40V 500MHZ PWRSO-10 |
2,754 |
|
- | LDMOS | 500MHz | 14dB | 12.5V | 5A | - | 150mA | 15W | 40V | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | PowerSO-10RF (Formed Lead) |
|
|
|
IXYS-RF |
RF MOSFET N-CHANNEL DE150 |
4,626 |
|
DE | N-Channel | - | - | - | 4.5A | - | 25µA | 200W | 500V | 6-SMD, Flat Lead Exposed Pad | DE150 |
|
|
|
Microsemi |
MOSFET RF PWR N-CH 50V 150W M174 |
5,094 |
|
- | N-Channel | 175MHz | 14dB | 50V | 1mA | - | 250mA | 150W | 170V | M174 | M174 |
|
|
|
IXYS-RF |
RF MOSFET N-CHANNEL TO-247 |
7,758 |
|
Z-MOS™ | N-Channel | 70MHz | 17dB | 100V | 10A | - | - | 200W | 500V | TO-247-3 | TO-247 (IXFH) |
|
|
|
IXYS-RF |
RF MOSFET N-CHANNEL DE375 |
4,302 |
|
DE | N-Channel | - | - | - | 25A | - | - | 940W | 500V | 6-SMD, Flat Lead Exposed Pad | DE375 |
|
|
|
IXYS-RF |
RF MOSFET N-CHANNEL DE275 |
6,876 |
|
Z-MOS™ | N-Channel | 70MHz | 17dB | 100V | 10A | - | - | 390W | 500V | 6-SMD, Flat Lead Exposed Pad | DE275 |
|
|
|
M/A-Com Technology Solutions |
FET RF 65V 200MHZ 211-07 |
8,586 |
|
- | N-Channel | 30MHz ~ 200MHz | 19.5dB | 28V | 4.5A | - | 25mA | 45W | 65V | 211-07 | 211-07, Style 2 |
|
|
|
STMicroelectronics |
FET RF 65V 945MHZ PWRSO10 |
8,406 |
|
- | LDMOS | 945MHz | 14.3dB | 28V | 7A | - | 100mA | 60W | 65V | PowerSO-10 Exposed Bottom Pad | PowerSO-10RF (Straight Lead) |
|
|
|
Microsemi |
MOSFET RF PWR N-CH 50V 150W M174 |
1,008 |
|
- | N-Channel | 175MHz | 14dB | 50V | 50µA | - | 250mA | 150W | 130V | M174 | M174 |
|
|
|
Microsemi |
MOSF RF N CH 170V 50A M177 |
3,024 |
|
- | N-Channel | 30MHz | 22dB | 50V | 50A | - | 250mA | 400W | 170V | M177 | M177 |