트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 102/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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STMicroelectronics |
MOSFET N-CH 1000V 1.85A TO-220 |
164,238 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 1.85A (Tc) | 10V | 8.5Ohm @ 900mA, 10V | 4.5V @ 50µA | 16nC @ 10V | ±30V | 499pF @ 25V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 16A TO-247AC |
14,046 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 16A (Tc) | 10V | 300mOhm @ 9.6A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 2600pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
300V/26A ULTRA JUNCTION X3-CLASS |
15,096 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 26A (Tc) | 10V | 66mOhm @ 13A, 10V | 4.5V @ 500µA | 22nC @ 10V | ±20V | 1.465nF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
200V/36A ULTRA JUNCTION X3-CLASS |
9,444 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 36A (Tc) | 10V | 45mOhm @ 18A, 10V | 4.5V @ 500µA | 21nC @ 10V | ±20V | 1425pF @ 25V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V TO-3PN |
8,016 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 9A (Ta) | 10V | 1.3Ohm @ 4.5A, 10V | 4V @ 900µA | 46nC @ 10V | ±30V | 2000pF @ 25V | - | 250W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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STMicroelectronics |
MOSFET N-CH 100V 120A H2PAK |
14,418 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 4.5mOhm @ 60A, 10V | 4V @ 250µA | 114.6nC @ 10V | ±20V | 6665pF @ 25V | - | 315W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 400V 26A TO-220 |
22,932 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 400V | 26A (Tc) | 10V | 160mOhm @ 13A, 10V | 5V @ 250µA | 60nC @ 10V | ±30V | 3185pF @ 25V | - | 265W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 900V 11A TO220-3 |
58,842 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | ±20V | 1700pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 1000V 3.5A TO-247 |
16,812 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 3.5A (Tc) | 10V | 3.7Ohm @ 1.75A, 10V | 4.5V @ 100µA | 59nC @ 10V | ±30V | 1154pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 60V 120A D2PAK |
18,852 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.4mOhm @ 75A, 10V | 4.5V @ 250µA | 226nC @ 10V | ±20V | 14885pF @ 25V | - | 395W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 20A TO-220FP |
12,138 |
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MDmesh™ M2-EP | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 163mOhm @ 10A, 10V | 4.75V @ 250µA | 33nC @ 10V | ±25V | 1320pF @ 100V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
SUPERFET3 650V TO220 PKG |
19,008 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 125mOhm @ 12A, 10V | 4.5V @ 2.4mA | 46nC @ 10V | ±30V | 1940pF @ 400V | - | 181W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 1050V 4A TO220FP |
8,172 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 1050V | 4A (Tc) | 10V | 2Ohm @ 2A, 10V | 5V @ 100µA | 17nC @ 10V | ±30V | 380pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET NCH 60V 36A DIRECTFET |
30,480 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 36A (Ta), 345A (Tc) | 10V | 1.5mOhm @ 120A, 10V | 4V @ 250µA | 275nC @ 10V | 60V | 10655pF @ 25V | - | 3.8W (Ta), 341W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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ON Semiconductor |
MOSFET N-CH 100V 80A TO-220AB |
19,062 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 12A (Ta), 80A (Tc) | 6V, 10V | 9mOhm @ 80A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 6000pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC |
23,796 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 400mOhm @ 8.4A, 10V | 4V @ 250µA | 64nC @ 10V | ±30V | 2038pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Texas Instruments |
MOSFET N-CH 60V 200A TO-220-3 |
17,052 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 200A (Ta) | 4.5V, 10V | 2mOhm @ 100A, 10V | 2.4V @ 250µA | 81nC @ 10V | ±20V | 6620pF @ 30V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 100V 80A TO-220 |
20,232 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 15mOhm @ 40A, 10V | 4V @ 250µA | 182nC @ 10V | ±20V | 5500pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 104A TO220AB |
18,072 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 104A (Tc) | 10V | 11mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | ±20V | 5270pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO-247AC |
17,268 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6540pF @ 50V | - | 280W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 30A TO-247AC |
19,884 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 30A (Tc) | 10V | 85mOhm @ 18A, 10V | 4V @ 250µA | 140nC @ 10V | ±20V | 2800pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 75V 120A TO-220AB |
113,934 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 9400pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 250V 59A TO-3P |
9,348 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 59A (Tc) | 10V | 49mOhm @ 29.5A, 10V | 5V @ 250µA | 82nC @ 10V | ±30V | 4020pF @ 25V | - | 392W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 400V 23A TO-3PN |
10,392 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 400V | 23A (Tc) | 10V | 190mOhm @ 11.5A, 10V | 5V @ 250µA | 60nC @ 10V | ±30V | 3030pF @ 25V | - | 235W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Texas Instruments |
MOSFET N-CH 100V 200A TO263 |
30,600 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 200A (Ta) | 6V, 10V | 3.4mOhm @ 100A, 10V | 3.4V @ 250µA | 98nC @ 10V | ±20V | 7930pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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STMicroelectronics |
MOSFET N-CH 600V 10A TO-247 |
16,620 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 4.5A, 10V | 4.5V @ 250µA | 70nC @ 10V | ±30V | 1370pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 200V 50A TO-247AC |
60,762 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 50A (Tc) | 10V | 40mOhm @ 28A, 10V | 4V @ 250µA | 234nC @ 10V | ±20V | 4057pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Texas Instruments |
MOSFET N-CH 100V TO-220 |
49,992 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 150A (Ta) | 6V, 10V | 3.6mOhm @ 100A, 10V | 3.4V @ 250µA | 101nC @ 10V | ±20V | 7930pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 80V 150A TO-220 |
1,897 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 80V | 150A (Ta) | 6V, 10V | 3.8mOhm @ 100A, 6V | 3.2V @ 250µA | 76nC @ 10V | ±20V | 7820pF @ 40V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 120V 80A TO-220 |
17,424 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 120V | 80A (Tc) | 10V | 18mOhm @ 40A, 10V | 2V @ 250µA | 189nC @ 10V | ±20V | 4300pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |