트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 121/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Texas Instruments |
MOSFET P-CH 8V 7.4A 4-PICOSTAR |
14,580 |
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NexFET™ | P-Channel | MOSFET (Metal Oxide) | 8V | 7.4A (Ta) | 1.5V, 4.5V | 9.9mOhm @ 1A, 4.5V | 1.05V @ 250µA | 8.5nC @ 4.5V | -6V | 1390pF @ 4V | - | 600mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PICOSTAR | 4-XFLGA |
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Vishay Siliconix |
MOSFET N-CH 25V 60A POWERPAK1212 |
118,002 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 25V | 60A (Tc) | 4.5V, 10V | 1.4mOhm @ 15A, 10V | 2.1V @ 250µA | 26nC @ 4.5V | +20V, -16V | 2650pF @ 10V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Nexperia |
MOSFET N-CH 75V 49A LFPAK |
70,860 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 49A (Tc) | 10V | 18mOhm @ 20A, 10V | 4V @ 1mA | 35nC @ 10V | ±20V | 2173pF @ 25V | - | 105W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 40V 75A LFPAK |
16,944 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 8mOhm @ 25A, 10V | 4V @ 1mA | 36.3nC @ 10V | ±20V | 2040pF @ 25V | - | 105W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 55V 55A DPAK |
78,366 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 55A (Tc) | 4.5V, 10V | 13.6mOhm @ 25A, 10V | 2V @ 1mA | 48nC @ 5V | ±15V | 2916pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 63A 8TSON |
219,186 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 4.3mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | ±20V | 1400pF @ 15V | - | 700mW (Ta), 34W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 21A 8-SOIC |
96,840 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 3.5mOhm @ 21A, 10V | 2.35V @ 50µA | 30nC @ 4.5V | ±20V | 3175pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 73A D-PAK |
46,932 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 73A (Tc) | 4.5V, 10V | 8.2mOhm @ 35A, 10V | 2.5V @ 250µA | 47nC @ 10V | ±20V | 1700pF @ 15V | - | 70W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO252-3 |
23,790 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 2V @ 23µA | 19nC @ 10V | ±20V | 530pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET P-CH 20V 3A 6DSBGA |
23,094 |
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NexFET™ | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 1.8V, 4.5V | 32.5mOhm @ 1.5A, 4.5V | 1.15V @ 250µA | 4.4nC @ 4.5V | ±8V | 595pF @ 10V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-DSBGA | 6-UFBGA, DSBGA |
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Nexperia |
MOSFET N-CH 80V 60A LFPAK |
76,920 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 60A (Tc) | 10V | 12.9mOhm @ 15A, 10V | 4V @ 1mA | 37nC @ 10V | ±20V | 2420pF @ 40V | - | 106W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 40V 75A LFPAK |
53,256 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 5V, 10V | 8mOhm @ 25A, 10V | 2.15V @ 1mA | 30nC @ 5V | ±15V | 2866pF @ 25V | - | 105.3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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IXYS Integrated Circuits Division |
MOSFET N-CH 415V 5MA SOT-223 |
16,392 |
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- | N-Channel | MOSFET (Metal Oxide) | 415V | 5mA (Ta) | -0.35V | 14Ohm @ 50mA, 350mV | - | - | ±20V | - | Depletion Mode | 2.5W (Ta) | -40°C ~ 85°C (TA) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 100V 17A DPAK |
67,674 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 10V | 81mOhm @ 17A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 620pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 100V 32A TO252 |
40,764 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 32A (Tc) | 4.5V, 10V | 37mOhm @ 10A, 10V | 3V @ 250µA | 34nC @ 10V | ±20V | 1598pF @ 30V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 30V 63A DPAK |
26,166 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 63A (Tc) | 4.5V, 10V | 12mOhm @ 25A, 10V | 2V @ 1mA | 31nC @ 5V | ±15V | 2317pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 63A 8SOP |
33,012 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | ±20V | 1400pF @ 15V | - | 1.6W (Ta), 36W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Nexperia |
PSMN2R0-25YLD/LFPAK/REEL 7 Q1 |
25,530 |
|
- | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 2.09mOhm @ 25A, 10V | 2.2V @ 1mA | 34.1nC @ 10V | ±20V | 2485pF @ 12V | Schottky Diode (Body) | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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ON Semiconductor |
MOSFET N-CH 500V DPAK |
19,632 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 4A (Tc) | 10V | 1.5Ohm @ 2A, 10V | 5V @ 250µA | 12nC @ 10V | ±25V | 440pF @ 25V | - | 62W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 400V 1.56A DPAK |
26,862 |
|
QFET® | P-Channel | MOSFET (Metal Oxide) | 400V | 1.56A (Tc) | 10V | 6.5Ohm @ 780mA, 10V | 5V @ 250µA | 13nC @ 10V | ±30V | 350pF @ 25V | - | 2.5W (Ta), 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 8A 8-SOIC |
19,386 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Tc) | 4.5V, 10V | 36mOhm @ 4.6A, 10V | 2.5V @ 250µA | 32nC @ 10V | ±20V | 1100pF @ 30V | - | 2.5W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 9A TO252 |
24,042 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 9A (Tc) | 10V | 860mOhm @ 4.5A, 10V | 4.5V @ 250µA | 24nC @ 10V | ±30V | 1160pF @ 25V | - | 178W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Diodes Incorporated |
MOSFET P-CH 40V 8.5A POWER |
20,364 |
|
- | P-Channel | MOSFET (Metal Oxide) | 40V | 8.5A (Ta) | 4.5V, 10V | 11mOhm @ 9.8A, 10V | 2.5V @ 250µA | 47.5nC @ 5V | ±25V | 4234pF @ 20V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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|
Nexperia |
MOSFET N-CH 30V 100A LFPAK |
14,556 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 1.55mOhm @ 25A, 10V | 1.95V @ 1mA | 65nC @ 10V | ±20V | 4044pF @ 15V | - | 179W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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|
|
Infineon Technologies |
MOSFET N-CH 55V 27A DPAK |
77,652 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 27A (Tc) | 10V | 45mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET N-CH 60V 5.4A DPAK |
20,538 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 5.4A (Ta) | 6V, 10V | 55mOhm @ 5.4A, 10V | 3V @ 250µA | 11nC @ 10V | ±20V | 660pF @ 30V | - | 3.8W (Ta), 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
|
Nexperia |
MOSFET N-CH 55V 55A DPAK |
117,480 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 55A (Tc) | 4.5V, 10V | 17.6mOhm @ 25A, 10V | 2V @ 1mA | - | ±10V | 2920pF @ 25V | - | 114W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET N-CH 60V 20A DPAK |
24,966 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Ta) | 10V | 46mOhm @ 10A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | 1015pF @ 25V | - | 1.88W (Ta), 60W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET P-CH 30V 3.4A 8SOIC |
26,934 |
|
PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 3.4A (Ta) | 4.5V, 10V | 130mOhm @ 1A, 10V | 3V @ 250µA | 3.5nC @ 5V | ±25V | 205pF @ 15V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 100V 3.1A DPAK |
54,600 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 3.1A (Tc) | 10V | 1.2Ohm @ 1.9A, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | 200pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |