트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 171/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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EPC |
TRANS GAN 100V DIE 16MOHM |
54,072 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CHAN 100V POWERPAK SO-8 |
25,230 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 100V | 12A (Ta), 42.5A (Tc) | 7.5V, 10V | 14.4mOhm @ 15A, 10V | 3.4V @ 250µA | 38nC @ 10V | ±20V | 1850pF @ 50V | - | 5W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CHAN 30V POWERPAK SO-8 |
23,928 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 0.62mOhm @ 20A, 10V | 2.2V @ 250µA | 188nC @ 10V | +20V, -16V | 9530pF @ 15V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CHAN PPAK 1212-8SH |
23,250 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 12.5A (Ta) | 2.5V, 4.5V | 6.2mOhm @ 19.5A, 4.5V | 1.5V @ 250µA | 27nC @ 4.5V | ±12V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | PowerPAK® 1212-8SH |
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EPC |
AEC-Q101 GAN FET 80V 20 MOHM |
56,268 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | Die | Die |
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STMicroelectronics |
MOSFET N-CH 800V 3A DPAK |
23,352 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 3.5Ohm @ 1.5A, 10V | 4.5V @ 50µA | 22.5nC @ 10V | ±30V | 575pF @ 25V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 60V 22A PWRDI5060-8 |
40,344 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 2.8mOhm @ 25A, 10V | 3V @ 250µA | 96.3nC @ 10V | ±20V | 4515pF @ 30V | - | 2.6W (Ta), 138W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET LOW ON-RESISTANCE AND FAS |
19,830 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 15V | 1.43Ohm @ 2A, 15V | 7V @ 450µA | 10.5nC @ 15V | ±30V | 260pF @ 100V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET COOLMOS 700V TO251-3 |
17,112 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 6.5A (Tc) | 10V | 750mOhm @ 1.4A, 10V | 3.5V @ 70µA | 8.3nC @ 400V | ±16V | 306pF @ 400V | - | 34.7W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET P-CH 40V 70A ATPAK |
51,816 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 70A (Ta) | 4.5V, 10V | 10.4mOhm @ 35A, 10V | - | 79.5nC @ 10V | ±20V | 3850pF @ 20V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
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ON Semiconductor |
MOSFET P-CH 100V 6.6A IPAK |
36,540 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 6.6A (Tc) | 10V | 530mOhm @ 3.3A, 10V | 4V @ 250µA | 15nC @ 10V | ±30V | 470pF @ 25V | - | 2.5W (Ta), 44W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 30V 55A POWERFLAT |
27,186 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 8.8mOhm @ 7.5A, 10V | 2.5V @ 250µA | 12nC @ 4.5V | ±16V | 965pF @ 25V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 60A POWERPAKSO-8 |
42,030 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 2.45mOhm @ 15A, 10V | 2.1V @ 250µA | 56nC @ 10V | +20V, -16V | 2850pF @ 15V | Schottky Diode (Body) | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 100V 20A DPAK |
21,930 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 20A (Tc) | 4.5V, 10V | 52mOhm @ 20A, 10V | 3V @ 250µA | 46nC @ 10V | ±16V | 1285pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 18A 8-SOIC |
48,984 |
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PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 4.8mOhm @ 18A, 10V | 3V @ 1mA | 41nC @ 10V | ±20V | 2670pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 700V 8.7A TO251-3 |
12,414 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 8.7A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 150µA | 15.3nC @ 10V | ±20V | 328pF @ 100V | - | 94W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3-347 | TO-251-3 Stub Leads, IPak |
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Rohm Semiconductor |
RS1E281BN IS LOW ON-RESISTANCE A |
22,662 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta), 80A (Tc) | 4.5V, 10V | 2.3mOhm @ 28A, 10V | 2.5V @ 1mA | 94nC @ 10V | ±20V | 5100pF @ 15V | - | 3W (Ta) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 30V 19A POWERFLAT5X6 |
28,314 |
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STripFET™ V | N-Channel | MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 10V | 5.8mOhm @ 9.5A, 10V | 1V @ 250µA | 12nC @ 4.5V | ±22V | 1500pF @ 25V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 800V 4A TO252 |
23,136 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.3Ohm @ 2A, 10V | 4.5V @ 400µA | 21nC @ 10V | ±20V | 880pF @ 100V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 40V PPAK 1212-8SH |
22,080 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 10.5A (Ta) | 4.5V, 10V | 7.8mOhm @ 16.4A, 10V | 2.5V @ 250µA | 23nC @ 4.5V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | PowerPAK® 1212-8SH |
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Vishay Siliconix |
MOSFET N-CH 20V 20A 8-SOIC |
24,768 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 20A (Tc) | 4.5V, 10V | 6mOhm @ 10A, 10V | 2.1V @ 250µA | 95nC @ 10V | ±16V | 3700pF @ 10V | - | 2.5W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 30V 9A 8-SOIC |
73,344 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Tc) | 4.5V, 10V | 19mOhm @ 4.5A, 10V | 1V @ 250µA | 17nC @ 5V | ±16V | 800pF @ 25V | - | 2.5W (Tc) | 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 30V 14A 8SOIC |
47,016 |
|
STripFET™ V | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Tc) | 4.5V, 10V | 6mOhm @ 7A, 10V | 1V @ 250µA | 12nC @ 4.5V | ±22V | 1500pF @ 25V | - | 2.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
600V N CHANNEL MOSFET |
32,802 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A | 10V | 2.5Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5nC @ 10V | ±30V | 500pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 30V 13A SO-8FL |
17,568 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 130A (Tc) | 4.5V, 11.5V | 3mOhm @ 30A, 10V | 2.5V @ 250µA | 48nC @ 4.5V | ±20V | 4500pF @ 12V | - | 900mW (Ta), 86.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Vishay Siliconix |
MOSFET P-CHANNEL 30V 18A 8SOIC |
19,806 |
|
Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 18A (Tc) | 4.5V, 10V | 12mOhm @ 13A, 10V | 2.5V @ 250µA | 50nC @ 4.5V | ±20V | 3630pF @ 25V | - | 6.8W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 24.5A 8-SOIC |
20,526 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 24.5A (Tc) | 4.5V, 10V | 5.2mOhm @ 15A, 10V | 2.6V @ 250µA | 68nC @ 10V | ±20V | 3150pF @ 15V | - | 2.5W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CHAN 100V POWERPAK SO-8 |
25,260 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 100V | 16.1A (Ta), 65.8A (Tc) | 7.5V, 10V | 8mOhm @ 15A, 10V | 3.4V @ 250µA | 64nC @ 10V | ±20V | 3610pF @ 50V | - | 3.2W (Ta), 83.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 40V 100A POWERPAKSO |
23,568 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 0.88mOhm @ 20A, 10V | 2.3V @ 250µA | 165nC @ 10V | +20V, -16V | 9100pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 600V 2A DPAK |
29,622 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.4Ohm @ 1.2A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |