트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 177/999
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제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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STMicroelectronics |
MOSFET N-CH 650V 12A D2PAK |
22,140 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 299mOhm @ 6A, 10V | 5V @ 250µA | 31nC @ 10V | ±25V | 1250pF @ 100V | - | 90W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 80V 660A PG-HSOG-8-1 |
19,356 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 165A (Tc) | 6V, 10V | 2.9mOhm @ 80A, 10V | 3.8V @ 108µA | 90nC @ 10V | ±20V | 6370pF @ 40V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |
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ON Semiconductor |
MOSFET N-CH 600V TO-220-3 |
35,730 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 10.2A (Tc) | 10V | 380mOhm @ 5A, 10V | 3.5V @ 250µA | 40nC @ 10V | ±20V | 1665pF @ 25V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 55V 17A D2PAK |
20,712 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 70mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N CH 620V 5.5A I2PAKFP |
13,812 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 5.5A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 4.5V @ 50µA | 34nC @ 10V | ±30V | 875pF @ 50V | - | 30W (Tc) | 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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STMicroelectronics |
MOSFET N-CH 800V 5A I2PAKFP |
16,110 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 5A (Tc) | 10V | 1.15Ohm @ 2.5A, 10V | 5V @ 100µA | 12nC @ 10V | ±30V | 270pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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Vishay Siliconix |
MOSFET N-CH 20V 17A 8-SOIC |
24,564 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 17A (Ta) | 2.5V, 4.5V | 3.5mOhm @ 25A, 4.5V | 2V @ 250µA | 70nC @ 4.5V | ±8V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 500V 11A D2PAK |
14,862 |
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FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 5V @ 250µA | 30nC @ 10V | ±25V | 850pF @ 50V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 600V TO220-3 |
24,198 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 10.2A (Tc) | 10V | 380mOhm @ 5A, 10V | 3.5V @ 250µA | 40nC @ 10V | ±20V | 1665pF @ 25V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CHAN 800V TO-252 |
23,424 |
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E | N-Channel | MOSFET (Metal Oxide) | 800V | 5.4A (Tc) | 10V | 940mOhm @ 3A, 10V | 4V @ 250µA | 44nC @ 10V | ±30V | 827pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 800MA 4-DIP |
20,136 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 800mA (Tc) | 10V | 800mOhm @ 800mA, 10V | 4V @ 250µA | 7nC @ 10V | ±20V | 200pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 600V 20A POWERPAK8X8 |
22,908 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 176mOhm @ 11A, 10V | 4V @ 250µA | 83nC @ 10V | ±30V | 2015pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 250V IPAK |
29,184 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 420mOhm @ 4A, 10V | 4V @ 250µA | 16nC @ 10V | ±20V | 500pF @ 25V | - | 72W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 30V 100A D2PAK |
23,712 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 3.2mOhm @ 50A, 10V | 2.5V @ 250µA | 88nC @ 5V | ±16V | 6200pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 21.5A PWRFLAT88 |
24,114 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 135mOhm @ 10.75A, 10V | 4V @ 250µA | 47nC @ 10V | ±25V | 1700pF @ 100V | - | 190W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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Infineon Technologies |
MOSFET NCH 650V 54A PG-HDSOP-10 |
17,796 |
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CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 125mOhm @ 6.4A, 10V | 4V @ 320µA | 27nC @ 10V | ±20V | 1080pF @ 400V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
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Vishay Siliconix |
MOSFET N-CHAN 600V 24A POWERPAK |
29,460 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 382mOhm @ 6A, 10V | 4V @ 250µA | 70nC @ 10V | ±30V | 1243pF @ 100V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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Infineon Technologies |
MV POWER MOS |
19,458 |
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OptiMOS™ 5 | N-Channel | MOSFET (Metal Oxide) | 80V | 52A (Ta), 169A (Tc) | 6V, 10V | 2.9mOhm @ 150A, 10V | 3.8V @ 108µA | 87nC @ 10V | ±20V | 6500pF @ 40V | - | 168W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8 | 8-PowerSFN |
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STMicroelectronics |
MOSFET N-CH 650V 12A TO220FP |
22,932 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 330mOhm @ 6A, 10V | 4V @ 250µA | 20nC @ 10V | ±25V | 770pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 320MA 4-DIP |
17,436 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 320mA (Ta) | 10V | 4.4Ohm @ 190mA, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 20V 40A PPAK SO-8 |
29,664 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 40A (Tc) | 4.5V, 10V | 2.25mOhm @ 20A, 10V | 1.6V @ 250µA | 150nC @ 10V | ±16V | 6110pF @ 10V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CHAN 800V TO-251 |
22,224 |
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E | N-Channel | MOSFET (Metal Oxide) | 800V | 5.4A (Tc) | 10V | 940mOhm @ 3A, 10V | 4V @ 250µA | 44nC @ 10V | ±30V | 827pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Long Leads, IPak, TO-251AB |
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STMicroelectronics |
MOSFET N-CH 30V 80A IPAK |
27,462 |
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DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 3.3mOhm @ 40A, 10V | 2.5V @ 250µA | 40nC @ 4.5V | ±20V | 4040pF @ 25V | - | 110W (Tc) | 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 650V 10A I2PAKFP |
16,776 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 430mOhm @ 5A, 10V | 4V @ 250µA | 17nC @ 10V | ±25V | 590pF @ 100V | - | 25W (Tc) | 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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STMicroelectronics |
MOSFET N-CH 600V 11A I2PAKFP |
16,398 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 378mOhm @ 5.5A, 10V | 4V @ 250µA | 17nC @ 10V | ±25V | 590pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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Vishay Siliconix |
MOSFET N-CH 100V 32A PPAK SO-8 |
27,144 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 32A (Tc) | 6V, 10V | 26mOhm @ 9.3A, 10V | 3.5V @ 250µA | 63nC @ 10V | ±20V | 3342pF @ 25V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 40V 180A TO263-7 |
13,650 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 4.5V, 10V | 1.1mOhm @ 100A, 10V | 2V @ 200µA | 346nC @ 10V | ±20V | 29000pF @ 20V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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STMicroelectronics |
MOSFET N CH 620V 8.4A I2PAKFP |
12,618 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 8.4A (Tc) | 10V | 750mOhm @ 4A, 10V | 4.5V @ 100µA | 42nC @ 10V | ±30V | 1250pF @ 50V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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ON Semiconductor |
MOSFET N-CH 80V 220A 8PSOF |
21,492 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 220A (Tc) | 10V | 3mOhm @ 80A, 10V | 4V @ 250µA | 112nC @ 10V | ±20V | 6320pF @ 40V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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Texas Instruments |
MOSFET N-CH 60V 100A TO220-3 |
18,648 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 4.2mOhm @ 100A, 10V | 2.2V @ 250µA | 53nC @ 10V | ±20V | 4680pF @ 30V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |