트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 185/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STMicroelectronics |
MOSFET N-CH 620V 15.0A TO220FP |
13,656 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 15.5A (Tc) | 10V | 340mOhm @ 7.5A, 10V | 4.5V @ 100µA | 105nC @ 10V | ±30V | 3100pF @ 50V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 900V 6.7A TO-247AC |
9,612 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 6.7A (Tc) | 10V | 1.6Ohm @ 4A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 2900pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-220SIS |
7,344 |
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DTMOSII | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 190mOhm @ 10A, 10V | 5V @ 1mA | 27nC @ 10V | ±30V | 1470pF @ 10V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 200V 65A TO-3P |
7,044 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 65A (Tc) | 10V | 32mOhm @ 32.5A, 10V | 5V @ 250µA | 200nC @ 10V | ±30V | 7900pF @ 25V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 16A TO-220AB |
19,800 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 380mOhm @ 8A, 10V | 5V @ 250µA | 68nC @ 10V | ±30V | 1900pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
SUPERFET3 650V FRFET110M |
8,160 |
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Automotive, AEC-Q101, SuperFET® III, FRFET® | N-Channel | MOSFET (Metal Oxide) | 650V | 30A (Tc) | 10V | 110mOhm @ 15A, 10V | 5V @ 3mA | 58nC @ 10V | ±30V | 2560pF @ 400V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 29.0A TO220FP |
7,728 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 31.5A (Tc) | 10V | 105mOhm @ 14.5A, 10V | 4V @ 250µA | 84nC @ 10V | ±25V | 2722pF @ 100V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
HIGH POWER_NEW |
7,944 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 105mOhm @ 9.3A, 10V | 4.5V @ 470µA | 42nC @ 10V | ±20V | 1752pF @ 400V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
MOSFET TO247-4 |
6,396 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 99mOhm @ 10.5A, 10V | 4V @ 530µA | 45nC @ 10V | ±20V | 1952pF @ 400V | - | 117W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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STMicroelectronics |
MOSFET N-CH 620V 15A TO-220 |
22,032 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 15.5A (Tc) | 10V | 380mOhm @ 7.5A, 10V | 4.5V @ 100µA | 94nC @ 10V | ±30V | 2500pF @ 50V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 29A TO220AB |
17,064 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130nC @ 10V | ±30V | 2600pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 500V 14A TO-247 |
10,560 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 250mOhm @ 7A, 10V | 4V @ 250µA | 34nC @ 10V | ±25V | 1000pF @ 50V | - | 110W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N CH 500V 22A TO-220FP |
7,974 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 130mOhm @ 11A, 10V | 4V @ 250µA | 62.5nC @ 10V | ±25V | 1973pF @ 50V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N CH 650V 28A I2PAKFP |
15,714 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 28A (Tc) | 10V | 110mOhm @ 14A, 10V | 5V @ 250µA | 62.5nC @ 10V | ±25V | 2700pF @ 100V | - | 35W (Tc) | 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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ON Semiconductor |
MOSFET N-CH 600V 25A TO-247 |
10,788 |
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SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 126mOhm @ 12.5A, 10V | 4V @ 250µA | 74nC @ 10V | ±30V | 3352pF @ 100V | - | 216W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 29A D2PAK |
13,224 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130nC @ 10V | ±30V | 2600pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 650V 28A I2PAK |
21,372 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 28A (Tc) | 10V | 110mOhm @ 14A, 10V | 5V @ 250µA | 62.5nC @ 10V | ±25V | 2700pF @ 100V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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ON Semiconductor |
SUPERFET3 650V TO247 |
7,896 |
|
SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 40A (Tc) | 10V | 82mOhm @ 20A, 10V | 5V @ 4mA | 81nC @ 10V | ±30V | 3410pF @ 400V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 200V 100A TO247AC |
6,612 |
|
StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 100A (Tc) | 10V | 11.5mOhm @ 60A, 10V | 4V @ 270µA | 102nC @ 10V | ±20V | 5094pF @ 50V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 24A TO247AC |
15,132 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2740pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 17A TO-220 |
34,074 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 17A (Tc) | 10V | 190mOhm @ 8.5A, 10V | 5V @ 250µA | 50nC @ 10V | ±25V | 1950pF @ 100V | - | 125W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO220AB |
22,008 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 250mOhm @ 12A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 2870pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 75V 120A I2PAK |
22,272 |
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DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 3mOhm @ 60A, 10V | 4V @ 250µA | 183nC @ 10V | ±20V | 11400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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STMicroelectronics |
MOSFET N-CH 600V 13A TO-247 |
7,140 |
|
FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 290mOhm @ 6.5A, 10V | 5V @ 250µA | 34nC @ 10V | ±25V | 1030pF @ 50V | - | 110W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 950V 10A TO220FP |
8,100 |
|
SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 950V | 10A (Tc) | 10V | 850mOhm @ 5A, 10V | 5V @ 100µA | 51nC @ 10V | ±30V | 1620pF @ 100V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 150V 90A TO-3P |
21,048 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 90A (Tc) | 10V | 18mOhm @ 45A, 10V | 4V @ 250µA | 285nC @ 10V | ±25V | 8700pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 150V 90A TO-3P |
11,412 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 90A (Tc) | 10V | 18mOhm @ 45A, 10V | 4V @ 250µA | 285nC @ 10V | ±25V | 8700pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 28A D2PAK |
22,884 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 123mOhm @ 14A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 2714pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
Infineon Technologies |
MOSFET N-CH 300V 50A TO247AC |
8,478 |
|
StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 50A (Tc) | 10V | 40mOhm @ 30A, 10V | 4V @ 270µA | 107nC @ 10V | ±20V | 4893pF @ 50V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 28A FULLPAK220 |
19,164 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 123mOhm @ 14A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 2714pF @ 100V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |