트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 231/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Rohm Semiconductor |
RD3L140SPFRA IS A AUTOMOTIVE GRA |
8,748 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 60V | 14A (Ta) | 4V, 10V | 84mOhm @ 14A, 10V | 3V @ 1mA | 27nC @ 10V | ±20V | 1900pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 15A 8SOIC |
7,542 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Tc) | 4.5V, 10V | 12mOhm @ 10A, 10V | 2.5V @ 250µA | 53nC @ 10V | ±20V | 2385pF @ 25V | - | 5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 9A 1212-8 |
6,642 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 11mOhm @ 14A, 10V | 3V @ 250µA | 20nC @ 5V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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STMicroelectronics |
MOSFET N-CH 400V 5.4A DPAK |
4,320 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 400V | 5.4A (Tc) | 10V | 1Ohm @ 2.7A, 10V | 4.5V @ 50µA | 26nC @ 10V | ±30V | 535pF @ 25V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 20V 3.5A 8-MSOP |
20,976 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 2.7V, 4.5V | 90mOhm @ 2.4A, 4.5V | 700mV @ 250µA | 6.9nC @ 4.5V | ±12V | 900pF @ 15V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MSOP | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Nexperia |
MOSFET N-CH 40V 120A LFPAK56 |
2,016 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Ta) | 10V | 2.5mOhm @ 25A, 10V | 3.6V @ 1mA | 79nC @ 10V | +20V, -10V | 4790pF @ 25V | - | 190W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
5,184 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 10V | 540mOhm @ 2.6A, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 28A 8-SOP ADV |
48,252 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 80V | 28A (Ta) | 4.5V, 10V | 9.4mOhm @ 14A, 10V | 2.3V @ 1mA | 91nC @ 10V | ±20V | 7540pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 60V 12A DPAK |
4,698 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 12A (Ta) | 10V | 150mOhm @ 6A, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 500pF @ 25V | - | 3.9W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CHANNEL 800V 3A DPAK |
8,676 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 2.6Ohm @ 1A, 10V | 5V @ 100µA | 3.7nC @ 10V | ±30V | 122pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 25V 100A 8-SON |
3,654 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 24A (Ta), 100A (Tc) | 4.5V, 10V | 3.9mOhm @ 24A, 10V | 1.9V @ 250µA | 11.7nC @ 4.5V | +16V, -12V | 1780pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
40V N CH MOSFET |
3,942 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 159A (Tc) | 4.5V, 10V | 3.5mOhm @ 24A, 4.5V | 2.45V @ 250µA | 63nC @ 10V | ±20V | 5850pF @ 10V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 100V SO-8 |
8,406 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 11.5A (Ta), 29.5A (Tc) | 4.5V, 10V | 9.5mOhm @ 13A, 10V | 2.8V @ 250µA | 71nC @ 10V | ±20V | 3000pF @ 50V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 25V 50A PPAK SO-8 |
2,646 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 2.8mOhm @ 15A, 10V | 2.3V @ 250µA | 90nC @ 10V | ±20V | 3800pF @ 10V | - | 5.2W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 30V 14A POWER56 |
7,956 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 35A (Tc) | 4.5V, 10V | 7mOhm @ 14A, 10V | 3V @ 250µA | 26nC @ 10V | ±20V | 1590pF @ 15V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8 |
2,808 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 3.1mOhm @ 15A, 10V | 2.5V @ 250µA | 95nC @ 10V | ±20V | 3545pF @ 15V | - | 5.2W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 25A TO252AA |
5,346 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Tc) | 4.5V, 10V | 22mOhm @ 20A, 10V | 2.5V @ 250µA | 50nC @ 10V | ±20V | 1975pF @ 25V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 20V 6A 6PWRFLAT |
3,708 |
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STripFET™ V | N-Channel | MOSFET (Metal Oxide) | 20V | - | 2.5V, 4.5V | 30mOhm @ 3A, 4.5V | 700mV @ 250µA | 6nC @ 4.5V | ±8V | 550pF @ 16V | - | 2.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (2x2) | 6-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 200V 19A D2PAK |
15,756 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 19A (Tc) | 10V | 170mOhm @ 9.5A, 10V | 4V @ 250µA | 53nC @ 10V | ±30V | 1080pF @ 25V | - | 3.13W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 80V 74A D2PAK |
30,882 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 74A (Tc) | 10V | 11mOhm @ 15A, 10V | 4V @ 1mA | 43nC @ 10V | ±20V | 2782pF @ 12V | - | 148W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 20V 5.6A 8-SOIC |
8,748 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 5.6A (Ta) | 4.5V, 10V | 75mOhm @ 3A, 10V | 2V @ 250µA | 46nC @ 10V | ±20V | 1400pF @ 16V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 66A TO252 |
2,250 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 66A (Tc) | 10V | 7.3mOhm @ 30A, 10V | 4V @ 250µA | 81nC @ 10V | ±20V | 4382pF @ 30V | - | 44.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 40V 23A TO252 |
5,814 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 23A (Ta), 70A (Tc) | 4.5V, 10V | 3mOhm @ 20A, 10V | 2.2V @ 250µA | 60nC @ 10V | ±20V | 4300pF @ 20V | - | 2.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 250V 2.2A DPAK |
7,182 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 2.2A (Tc) | 10V | 2Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 87A TO-220AB |
22,692 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 87A (Tc) | 4.5V, 10V | 6.3mOhm @ 21A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | ±20V | 2130pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 32A DPAK |
6,876 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 32A (Tc) | 10V | 37mOhm @ 32A, 10V | 4V @ 250µA | 40nC @ 10V | ±20V | 1450pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 30V 30A POWERPAKSO-8 |
7,470 |
|
Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 8.5mOhm @ 10A, 10V | 2.5V @ 250µA | 164nC @ 10V | ±20V | - | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 30V 6.4A 1212-8 |
3,726 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 6.4A (Ta) | 4.5V, 10V | 25mOhm @ 9.8A, 10V | 3V @ 250µA | 40nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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STMicroelectronics |
MOSFET P-CH 40V 42A 8POWERFLAT |
4,554 |
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STripFET™ F6 | P-Channel | MOSFET (Metal Oxide) | 40V | 42A (Tc) | 4.5V, 10V | 18mOhm @ 5A, 10V | 2.5V @ 250µA | 22nC @ 4.5V | ±20V | 2850pF @ 25V | - | 75W (Tc) | 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Rohm Semiconductor |
RD3H160SPFRA IS A POWER MOSFET F |
8,550 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 45V | 16A (Ta) | 4V, 10V | 50mOhm @ 16A, 10V | 3V @ 1mA | 16nC @ 5V | ±20V | 2000pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |