트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 253/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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STMicroelectronics |
MOSFET N-CH 60V 250A H2PAK |
3,454 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 1200V 6A TO-220AB |
9,036 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 6A (Tc) | 10V | 2.4Ohm @ 500mA, 10V | 5V @ 1mA | 92nC @ 10V | ±30V | 2830pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
N-CHANNEL 900 V, 0.24 OHM TYP., |
2,916 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 900V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 5V @ 100µA | 40nC @ 10V | ±30V | 1500pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 20A D2PAK |
8,766 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 165mOhm @ 10A, 10V | 4V @ 250µA | 60nC @ 10V | ±30V | 1800pF @ 50V | - | 140W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
N-CHANNEL 600 V 0.094 OHM TYP. 2 |
2,502 |
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MDmesh™ DM6 | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 110mOhm @ 12.5A, 10V | 4.75V @ 250µA | - | ±25V | - | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 650V 17A POWERFLAT88 |
2,100 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 17A (Tc) | 10V | 179mOhm @ 8.5A, 10V | 5V @ 250µA | 50nC @ 10V | ±25V | 1950pF @ 100V | - | 3W (Ta), 125W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 650V 15A POWERFLAT |
4,842 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 2.8A (Ta), 15A (Tc) | 10V | 162mOhm @ 11A, 10V | 5V @ 250µA | 45nC @ 10V | ±25V | 1865pF @ 100V | - | 2.8W (Ta), 125W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 60V 180A H2PAK |
6,138 |
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DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 60V | 180A (Tc) | 10V | 2.4mOhm @ 60A, 10V | 4V @ 250µA | 183nC @ 10V | ±20V | 11800pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V D2PAK |
3,834 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 3.5mOhm @ 75A, 10V | 4V @ 250µA | 116nC @ 10V | ±20V | 7295pF @ 25V | - | 2.4W (Ta), 227W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
N-CHANNEL 600 V, 0.85 OHM TYP., |
5,382 |
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MDmesh™ M6 | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 80mOhm @ 15.5A, 10V | 4.75V @ 250µA | 57nC @ 10V | ±25V | - | - | 189W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 650V 31A TO-220 |
8,148 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 31A (Tc) | 10V | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | 2800pF @ 100V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 23A D2PAK |
6,822 |
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FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 150mOhm @ 11.5A, 10V | 5V @ 250µA | 62.5nC @ 10V | ±25V | 2090pF @ 100V | - | 190W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N CH 650V 35A D2PAK |
4,824 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Tc) | 10V | 78mOhm @ 19.5A, 10V | 5V @ 250µA | 91nC @ 10V | ±25V | 3375pF @ 100V | - | 210W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 21A D2PAK |
2,898 |
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FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 175mOhm @ 10.5A, 10V | 5V @ 250µA | 54.6nC @ 10V | ±25V | 1817pF @ 100V | - | 190W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 40V 180A H2PAK-2 |
3,006 |
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DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 1.25mOhm @ 60A, 10V | 4.5V @ 250µA | 340nC @ 10V | ±20V | 17930pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 29A D2PAK |
4,608 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 105mOhm @ 14.5A, 10V | 4V @ 250µA | 84nC @ 10V | ±25V | 2722pF @ 100V | - | 250W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CHAN 600V POWERPAK 8X8 |
6,048 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 68mOhm @ 15A, 10V | 5V @ 250µA | 80nC @ 10V | ±30V | 2650pF @ 100V | - | 202W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 40V 180A H2PAK-2 |
8,568 |
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Automotive, AEC-Q101, DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 1.15mOhm @ 60A, 10V | 4.5V @ 250µA | 404nC @ 10V | ±20V | 20500pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 650V 24A D2PAK |
2,718 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 119mOhm @ 12A, 10V | 5V @ 250µA | 72nC @ 10V | ±25V | 3320pF @ 100V | - | 150W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 550V 22.5A 4PWRFLAT |
5,040 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 550V | 22.5A (Tc) | 10V | 90mOhm @ 16.5A, 10V | 5V @ 250µA | 62nC @ 10V | ±25V | 2670pF @ 100V | - | 2.8W (Ta), 150W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 650V 30A D2PAK |
6,696 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 30A (Tc) | 10V | 95mOhm @ 15A, 10V | 5V @ 250µA | 71nC @ 10V | ±25V | 3000pF @ 100V | - | 190W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 650V 22.5A 4PWRFLAT |
7,758 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 3.8A (Ta), 22.5A (Tc) | 10V | 86mOhm @ 14.5A, 10V | 5V @ 250µA | 82nC @ 10V | ±25V | 3470pF @ 100V | - | 2.8W (Ta), 160W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFLAT™ (8x8) | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 800V 19.5A D2PAK |
2,628 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 19.5A (Tc) | 10V | 260mOhm @ 19.5A, 10V | 5V @ 100µA | 40nC @ 10V | ±30V | 1600pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 75V 80A TO-263 |
9,312 |
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Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 24mOhm @ 40A, 10V | 4.5V @ 250µA | 103nC @ 10V | ±20V | 3600pF @ 25V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Transphorm |
GANFET N-CH 650V 20A TO220 |
8,892 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14nC @ 8V | ±18V | 760pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 100V 75A TO-247 |
8,484 |
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Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 21mOhm @ 500mA, 10V | 4.5V @ 250µA | 215nC @ 10V | ±20V | 8100pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 4.3A 8POWERFLAT |
3,906 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 4.3A (Ta), 22.5A (Tc) | 10V | 69mOhm @ 20A, 10V | 5V @ 250µA | 110nC @ 10V | ±25V | 4200pF @ 100V | - | 2.8W (Ta), 189W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 600V 34.9A TO3PN |
9,816 |
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FRFET®, SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 34.9A (Tc) | 10V | 95mOhm @ 18A, 10V | 5V @ 250µA | 112nC @ 10V | ±30V | 4245pF @ 100V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Transphorm |
GANFET N-CH 650V 20A 3PQFN |
6,960 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 10V | 130mOhm @ 14A, 8V | 2.6V @ 300µA | 42nC @ 8V | ±18V | 760pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
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Transphorm |
GANFET N-CH 600V 17A PQFN |
7,542 |
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- | N-Channel | GaNFET (Gallium Nitride) | 600V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PQFN (8x8) | 3-PowerDFN |