트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 279/999
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제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Vishay Siliconix |
MOSFET N-CH 600V 1.4A I-PAK |
21,804 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 1.4A (Tc) | 10V | 7Ohm @ 840mA, 10V | 4V @ 250µA | 14nC @ 10V | ±30V | 229pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 150V 10A TO-220F |
20,244 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 10A (Tc) | 10V | 77mOhm @ 10A, 10V | 4V @ 250µA | 11.2nC @ 10V | ±20V | 765pF @ 75V | - | 21W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 800V 6A TO220-3 |
8,406 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 900mOhm @ 2.2A, 10V | 3.5V @ 110µA | 15nC @ 10V | ±20V | 350pF @ 500V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 40V TO220-3 |
6,120 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 53A (Ta), 100A (Tc) | 4.5V, 10V | 7mOhm @ 40A, 10V | 2.3V @ 250µA | 25nC @ 10V | ±20V | 1800pF @ 20V | - | 115W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 900V 2.2A TO-220 |
11,520 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 2.2A (Tc) | 10V | 7.2Ohm @ 1.1A, 10V | 5V @ 250µA | 15nC @ 10V | ±30V | 500pF @ 25V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 200V 18A TO-220 |
12,720 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 145mOhm @ 9A, 10V | 5V @ 250µA | 26nC @ 10V | ±30V | 1180pF @ 25V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 6A TO220-3 |
10,848 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9nC @ 10V | ±20V | 363pF @ 400V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CHANNEL 600V 6A TO220 |
7,800 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9nC @ 10V | ±20V | 363pF @ 400V | - | 21W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Microchip Technology |
MOSFET N-CH 400V 0.22A TO92-3 |
7,200 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 220mA (Tj) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 2V @ 2mA | - | ±20V | 225pF @ 25V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 60V 17A TO220-3 |
18,360 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Ta), 45A (Tc) | 6V, 10V | 6mOhm @ 45A, 10V | 2.8V @ 36µA | 27nC @ 10V | ±20V | 2000pF @ 30V | - | 3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A TO220 |
17,316 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | ±20V | 440pF @ 100V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 11.5A TO220SIS |
8,136 |
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DTMOSV | N-Channel | MOSFET (Metal Oxide) | 650V | 11.5A (Tc) | 10V | 290mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | ±30V | 730pF @ 300V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 14A TO-220 |
13,212 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 380mOhm @ 7A, 10V | 4.5V @ 250µA | 51nC @ 10V | ±30V | 2297pF @ 25V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
9,804 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 11.4mOhm @ 8A, 4.5V | 2.5V @ 300µA | 28.4nC @ 10V | ±20V | 1990pF @ 25V | - | 36W (Tc) | 175°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET P-CH 200V 11.5A TO-220 |
8,628 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 200V | 11.5A (Tc) | 10V | 470mOhm @ 5.75A, 10V | 5V @ 250µA | 40nC @ 10V | ±30V | 1200pF @ 25V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 11.5A TO220SIS |
6,684 |
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DTMOSV | N-Channel | MOSFET (Metal Oxide) | 600V | 11.5A (Tc) | 10V | 290mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | ±30V | 730pF @ 300V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 90A |
14,844 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 4mOhm @ 90A, 10V | 4V @ 90µA | 98nC @ 10V | ±20V | 11000pF @ 30V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO220-3 |
18,888 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 8.6mOhm @ 73A, 10V | 3.5V @ 75µA | 55nC @ 10V | ±20V | 3980pF @ 50V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 200V 19.4A TO-220 |
8,748 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 19.4A (Tc) | 10V | 150mOhm @ 9.7A, 10V | 5V @ 250µA | 40nC @ 10V | ±30V | 1600pF @ 25V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Diodes Incorporated |
MOSFET P-CH 450V 0.045A TO92-3 |
15,936 |
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- | P-Channel | MOSFET (Metal Oxide) | 450V | 45mA (Ta) | 10V | 150Ohm @ 50mA, 10V | 4.5V @ 1mA | - | ±20V | 120pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 350V 0.18A TO92-3 |
9,396 |
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- | P-Channel | MOSFET (Metal Oxide) | 350V | 180mA (Tj) | 2.5V, 10V | 15Ohm @ 300mA, 10V | 2V @ 1mA | - | ±20V | 300pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Rohm Semiconductor |
MOSFET N-CH 600V 4A TO220 |
6,144 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 980mOhm @ 1.5A, 10V | 4V @ 1mA | 15nC @ 10V | ±20V | 250pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Microchip Technology |
MOSFET N-CH 400V 0.16A TO92-3 |
5,526 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 160mA (Tj) | 4.5V | 12Ohm @ 100mA, 4.5V | 1.8V @ 1mA | - | ±20V | 110pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 150V 23A TO-220AB |
17,100 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 23A (Tc) | 10V | 90mOhm @ 14A, 10V | 5.5V @ 250µA | 56nC @ 10V | ±30V | 1200pF @ 25V | - | 3.8W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 40V 90A I-PAK |
6,948 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 6V, 10V | 2.4mOhm @ 90A, 10V | 3.9V @ 100µA | 134nC @ 10V | ±20V | 4610pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 200V 4.1A TO220FP |
18,360 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 4.1A (Tc) | 10V | 800mOhm @ 2.5A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 250V 8.1A TO-220AB |
18,576 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 8.1A (Tc) | 10V | 450mOhm @ 5.1A, 10V | 4V @ 250µA | 41nC @ 10V | ±20V | 770pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 9A TO220-3 |
10,608 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | 4V @ 140µA | 13nC @ 10V | ±20V | 555pF @ 400V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V 4.5A TO-220F |
7,344 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 2.5Ohm @ 2.25A, 10V | 4V @ 250µA | 19nC @ 10V | ±30V | 670pF @ 25V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Nexperia |
MOSFET N-CH 30V TO220AB |
9,312 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2.7mOhm @ 15A, 10V | 2.15V @ 1mA | 66nC @ 10V | ±20V | 3954pF @ 12V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |