트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 34/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Vishay Siliconix |
MOSFET N-CH 200V 3.2A PPAK SO-8 |
142,614 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 3.2A (Ta) | 6V, 10V | 80mOhm @ 4A, 10V | 4.5V @ 250µA | 42nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8 |
341,442 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 38A (Ta), 100A (Tc) | 4.5V, 10V | 1mOhm @ 50A, 10V | 2V @ 250µA | 95nC @ 10V | ±20V | 6800pF @ 20V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 100A TO252-3 |
56,694 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 3.1mOhm @ 100A, 10V | 2.2V @ 93µA | 79nC @ 4.5V | ±20V | 13000pF @ 30V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 150V 52A 8DFN |
43,554 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 13.5A (Ta), 52A (Tc) | 6V, 10V | 16.5mOhm @ 20A, 10V | 3.4V @ 250µA | 43nC @ 10V | ±20V | 2388pF @ 75V | - | 7.4W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Vishay Siliconix |
MOSFET N-CH 60V 2.5A 4-DIP |
105,396 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 2.5A (Ta) | 4V, 5V | 100mOhm @ 1.5A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 100V 14A TO-220AB |
19,170 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | ±20V | 670pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia |
MOSFET N-CH 100V TO220AB |
258,252 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 37A (Tc) | 10V | 26.8mOhm @ 15A, 10V | 4V @ 1mA | 30nC @ 10V | ±20V | 1624pF @ 50V | - | 103W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 33A TO-220AB |
94,074 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 33A (Tc) | 10V | 44mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | ±20V | 1960pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET N-CH 240V 260MA TO92-3 |
90,192 |
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- | N-Channel | MOSFET (Metal Oxide) | 240V | 260mA (Ta) | 2.5V, 10V | 5.5Ohm @ 500mA, 10V | 1.8V @ 1mA | - | ±40V | 200pF @ 25V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
MOSFET N-CH 150V 7.5A 8-SOIC |
20,952 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 7.5A (Ta) | 6V, 10V | 19.8mOhm @ 7.5A, 10V | 4V @ 250µA | 40nC @ 10V | ±20V | 2570pF @ 75V | - | 2.5W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 150A 8SOP |
39,402 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 150A (Tc) | 4.5V, 10V | 0.85mOhm @ 50A, 10V | 2.4V @ 1mA | 103nC @ 10V | ±20V | 9600pF @ 20V | - | 1W (Ta), 170W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET P-CH 30V 100A TDSON-8 |
1,129,608 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 25.4A (Ta), 100A (Tc) | 6V, 10V | 3mOhm @ 50A, 10V | 3.1V @ 345µA | 186nC @ 10V | ±25V | 14000pF @ 15V | - | 2.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 40V 33A 8-SOIC |
19,062 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 33A (Tc) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 2.8V @ 250µA | 122nC @ 10V | ±20V | 5670pF @ 20V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Texas Instruments |
MOSFET N-CH 60V 23A 8VSON |
388,704 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4.5V, 10V | 3.2mOhm @ 25A, 10V | 2.2V @ 250µA | 58nC @ 10V | ±20V | 5070pF @ 30V | - | 3.2W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 200V 9A TO-220 |
183,240 |
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MESH OVERLAY™ II | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 4V @ 250µA | 45nC @ 10V | ±20V | 700pF @ 25V | - | 75W (Tc) | -65°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 92A 8DSOP |
47,010 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 92A (Tc) | 10V | 4.5mOhm @ 46A, 10V | 4V @ 1mA | 58nC @ 10V | ±20V | 5200pF @ 50V | - | 800mW (Ta), 142W (Tc) | 150°C (TJ) | Surface Mount | 8-DSOP Advance | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
23,064 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 4.5V, 10V | 8.7mOhm @ 20A, 10V | 2.8V @ 250µA | 60nC @ 10V | ±20V | 1975pF @ 50V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 150V 50A TO252-3 |
59,430 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 50A (Tc) | 8V, 10V | 20mOhm @ 50A, 10V | 4V @ 90µA | 31nC @ 10V | ±20V | 1820pF @ 75V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
92,544 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 60A (Tc) | 4.5V, 10V | 5.5mOhm @ 20A, 10V | 2.8V @ 250µA | 86nC @ 10V | ±20V | 2800pF @ 40V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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STMicroelectronics |
MOSFET N-CH 800V 2A TO220FP |
44,328 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 3.25Ohm @ 1A, 10V | 5V @ 100µA | 2.63nC @ 10V | ±30V | 102pF @ 100V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 100V 23A TO-220AB |
24,900 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 117mOhm @ 11A, 10V | 4V @ 250µA | 97nC @ 10V | ±20V | 1300pF @ 25V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 60V 100A 8VSON |
535,422 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4.5V, 10V | 2.2mOhm @ 28A, 10V | 2.3V @ 250µA | 53nC @ 10V | ±20V | 4230pF @ 30V | - | 3.1W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 55V 49A TO-220AB |
22,434 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 49A (Tc) | 10V | 17.5mOhm @ 25A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1470pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Microchip Technology |
MOSFET P-CH 400V 0.125A SOT89-3 |
631,200 |
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- | P-Channel | MOSFET (Metal Oxide) | 400V | 125mA (Tj) | 4.5V, 10V | 25Ohm @ 100mA, 10V | 2.4V @ 1mA | - | ±20V | 125pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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ON Semiconductor |
MOSFET N-CH 30V 8-PQFN |
651,444 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 75A (Tc) | 4.5V, 10V | 1.3mOhm @ 30A, 10V | 2.5V @ 1mA | 94nC @ 10V | ±20V | 5860pF @ 15V | - | 2.4W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N CH 80V 24A 8-PQFN |
110,484 |
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Dual Cool™, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 24A (Ta), 76A (Tc) | 8V, 10V | 3.1mOhm @ 24A, 10V | 4.5V @ 250µA | 101nC @ 10V | ±20V | 7005pF @ 40V | - | 3.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool™56 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V POWER56 |
135,006 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 36A (Ta), 100A (Tc) | 4.5V, 10V | 0.99mOhm @ 36A, 10V | 3V @ 250µA | 209nC @ 10V | ±20V | 14965pF @ 15V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 80V 28A PPAK SO-8 |
277,596 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 80V | 28A (Tc) | 4.5V, 10V | 25mOhm @ 10.2A, 10V | 3V @ 250µA | 160nC @ 10V | ±20V | 4700pF @ 40V | - | 5.2W (Ta), 83.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 80V 28A PPAK SO-8 |
82,140 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 80V | 28A (Tc) | 4.5V, 10V | 25mOhm @ 10.2A, 10V | 3V @ 250µA | 160nC @ 10V | ±20V | 4700pF @ 40V | - | 5.2W (Ta), 83.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Texas Instruments |
MOSFET N-CH 80V 100A 8SON |
81,570 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Ta) | 6V, 10V | 4.1mOhm @ 19A, 10V | 3.3V @ 250µA | 62nC @ 10V | ±20V | 4870pF @ 40V | - | 3.1W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |