트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 390/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
COOLSIC MOSFETS 1200V |
2,322 |
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CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 26A (Tc) | 15V, 18V | 117mOhm @ 8.5A, 18V | 5.7V @ 3.7mA | 21nC @ 18V | +23V, -7V | 707pF @ 800V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-1 | TO-247-4 |
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Vishay Siliconix |
MOSFET N-CHAN 650V TO247AC |
4,698 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 99A (Tc) | 10V | 23mOhm @ 25A, 10V | 5V @ 250µA | 228nC @ 10V | ±30V | 7612pF @ 100V | - | 524W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Rohm Semiconductor |
NCH 600V 76A POWER MOSFET. R607 |
2,412 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 76A (Tc) | 10V | 42mOhm @ 44.4A, 10V | 5V @ 1mA | 165nC @ 10V | ±20V | 7400pF @ 25V | - | 735W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
NCH 600V 76A POWER MOSFET. R607 |
5,166 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 76A (Tc) | 10V | 42mOhm @ 44.4A, 10V | 4V @ 1mA | 260nC @ 10V | ±20V | 6500pF @ 25V | - | 735W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
COOLSIC MOSFETS 1200V |
4,806 |
|
CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 36A (Tc) | 15V, 18V | 78mOhm @ 13A, 18V | 5.7V @ 5.6mA | 31nC @ 18V | +23V, -7V | 1.06nF @ 800V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
COOLSIC MOSFETS 1200V |
5,760 |
|
CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 36A (Tc) | 15V, 18V | 78mOhm @ 13A, 18V | 5.7V @ 5.6mA | 31nC @ 18V | +23V, -7V | 1.06nF @ 800V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-1 | TO-247-4 |
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|
IXYS |
200V/300A ULTRA JUNCTION X3-CLAS |
2,880 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 300A (Tc) | 10V | 4mOhm @ 150A, 10V | 4.5V @ 8mA | 375nC @ 10V | ±20V | 23800pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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|
STMicroelectronics |
MOSFET N-CH 500V 60A MAX247 |
8,496 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 500V | 60A (Tc) | 10V | 50mOhm @ 30A, 10V | 5V @ 250µA | 266nC @ 10V | ±30V | 7500pF @ 25V | - | 560W (Tc) | 150°C (TJ) | Through Hole | MAX247™ | TO-247-3 |
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Vishay Semiconductor Diodes Division |
SINGLE SWITCH PWR MODULE SOT-227 |
6,786 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 287A (Tc) | 10V | 4.7mOhm @ 200A, 10V | 4.3V @ 1mA | 250nC @ 10V | ±20V | 16500pF @ 100V | - | 937W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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IXYS |
2000V TO 3000V POLAR3 POWER MOSF |
8,298 |
|
- | N-Channel | MOSFET (Metal Oxide) | 3000V | 1A (Tc) | 10V | 50Ohm @ 500mA, 10V | 4V @ 250µA | 30.6nC @ 10V | ±20V | 895pF @ 25V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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STMicroelectronics |
MOSFET N-CH 550V 48A ISOTOP |
6,858 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 550V | 48A (Tc) | 10V | 100mOhm @ 24A, 10V | 5V @ 250µA | 117nC @ 10V | ±30V | 3700pF @ 25V | - | 450W (Tc) | 150°C (TJ) | Chassis Mount | ISOTOP® | ISOTOP |
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IXYS |
MOSFET N-CH 150V 400A PLUS247 |
8,496 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 400A (Tc) | 10V | 3.1mOhm @ 100A, 10V | 4.5V @ 1mA | 430nC @ 10V | ±20V | 14500pF @ 25V | - | 1500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PLUS247™ | TO-247-3 |
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Infineon Technologies |
COOLSIC MOSFETS 1200V |
2,790 |
|
CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 56A (Tc) | 15V, 18V | 40mOhm @ 25A, 18V | 5.7V @ 10mA | 63nC @ 18V | +23V, -7V | 2.12nF @ 800V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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STMicroelectronics |
N-CHANNEL 650 V, 0.014 OHM TYP., |
4,662 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 650V | 130A (Tc) | 10V | 17mOhm @ 65A, 10V | 5V @ 250µA | 363nC @ 10V | ±25V | 15600pF @ 100V | - | 672W (Tc) | 150°C (TJ) | Chassis Mount | ISOTOP | SOT-227-4, miniBLOC |
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Rohm Semiconductor |
AUTOMOTIVE GRADE N-CHANNEL SIC P |
2,106 |
|
Automotive, AEC-Q101 | N-Channel | SiCFET (Silicon Carbide) | 1200V | 40A (Tc) | 18V | 117mOhm @ 10A, 18V | 4V @ 4.4mA | 106nC @ 18V | +22V, -6V | 2080pF @ 800V | - | - | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Infineon Technologies |
COOLSIC MOSFETS 1200V |
2,844 |
|
CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 56A (Tc) | 15V, 18V | 40mOhm @ 25A, 18V | 5.7V @ 10mA | 63nC @ 18V | +23V, -7V | 2.12nF @ 800V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-1 | TO-247-4 |
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IXYS |
MOSFET N-CH 150V 400A SOT-227 |
8,802 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 400A (Tc) | 10V | 2.7mOhm @ 100A, 10V | 4.5V @ 1mA | 430nC @ 10V | ±20V | 14500pF @ 25V | - | 1070W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
|
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|
Microsemi |
GEN2 SIC MOSFET 1200V 80MOHM SOT |
3,114 |
|
- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 35A | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 (ISOTOP®) | SOT-227-4, miniBLOC |
|
|
|
IXYS |
MOSFET 1KV 70A ULTRA JCT PLUS247 |
2,610 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 70A (Tc) | 10V | 89mOhm @ 35A, 10V | 6V @ 8mA | 350nC @ 10V | ±30V | 9160pF @ 25V | - | 1785W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS264™ | TO-264-3, TO-264AA |
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STMicroelectronics |
MOSFET N-CH 200V 140A ISOTOP |
5,328 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 200V | 140A (Tc) | 10V | 12mOhm @ 70A, 10V | 4V @ 250µA | 338nC @ 10V | ±20V | 11100pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP | SOT-227-4, miniBLOC |
|
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Cree/Wolfspeed |
1200V, 21 MOHM, G3 SIC MOSFET |
6,174 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STMicroelectronics |
SILICON CARBIDE POWER MOSFET 650 |
5,022 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 650V | 90A (Tc) | 18V | 26mOhm @ 50A, 18V | 5V @ 1mA | 157nC @ 18V | +22V, -10V | 3300pF @ 400V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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|
Rohm Semiconductor |
AUTOMOTIVE GRADE N-CHANNEL SIC P |
7,776 |
|
Automotive, AEC-Q101 | N-Channel | SiCFET (Silicon Carbide) | 650V | 70A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 104nC @ 18V | +22V, -4V | 1526pF @ 500V | - | 262W | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Microsemi |
GEN2 SIC MOSFET 700V 15MOHM D3PA |
7,542 |
|
- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 700V | 166A | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
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|
Microsemi |
GEN2 SIC MOSFET 1200V 40MOHM SOT |
5,760 |
|
- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 53A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.8V @ 1mA | 137nC @ 20V | +25V, -10V | 1990pF @ 1000V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 (ISOTOP®) | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
GEN2 SIC MOSFET 1200V 25MOHM TO- |
5,778 |
|
- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 103A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | +25V, -10V | 3020pF @ 1000V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
STMicroelectronics |
SILICON CARBIDE POWER MOSFET 650 |
6,498 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 650V | 90A (Tc) | 18V | 25mOhm @ 50A, 18V | 5V @ 250µA | 157nC @ 18V | +22V, -10V | 3300pF @ 400V | - | 390W (Tc) | -55°C ~ 200°C (TJ) | Through Hole | HiP247™ | TO-247-3 |
|
|
|
Microsemi |
GEN2 SIC MOSFET 1200V 25MOHM D3P |
3,562 |
|
- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 100A | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
|
|
IXYS |
MOSFET 1000V 74A ULTRA JUNCTION |
4,626 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 74A (Tc) | 10V | 66mOhm @ 37A, 10V | 5.5V @ 8mA | 425nC @ 10V | ±30V | 17000pF @ 25V | - | 1170W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
GEN2 SIC MOSFET 1200V 25MOHM SOT |
8,982 |
|
- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 77A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | +25V, -10V | 3020pF @ 1000V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 (ISOTOP®) | SOT-227-4, miniBLOC |