트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 58/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 20V 6.7A SOT23 |
113,106 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 6.7A (Tc) | 1.8V, 4.5V | 25mOhm @ 4A, 4.5V | 800mV @ 250µA | 4nC @ 4.5V | ±10V | 600pF @ 10V | - | 1.56W (Tc) | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 5.5A SOT23 |
43,026 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 5.5A (Tc) | 2.5V, 4.5V | 32mOhm @ 4A, 4.5V | 900mV @ 250µA | 8.9nC @ 4.5V | ±12V | 792pF @ 15V | - | 1.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 20V 3.9A SOT23 |
189,330 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 3.9A (Tc) | 2.5V, 4.5V | 65mOhm @ 3.2A, 4.5V | 1.2V @ 250µA | 7.8nC @ 4.5V | ±8V | 587pF @ 10V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Texas Instruments |
MOSFET P-CH 20V 2.5A 3-PICOSTAR |
361,212 |
|
FemtoFET™ | P-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 1.8V, 8V | 94mOhm @ 500mA, 8V | 1.2V @ 250µA | 1.42nC @ 4.5V | -12V | 230pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
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Diodes Incorporated |
MOSFET N-CH 30V 4A SOT23-3 |
99,468 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 2.5V, 10V | 45mOhm @ 4A, 10V | 1.4V @ 250µA | 17.2nC @ 10V | ±12V | 676pF @ 15V | - | 760mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 20V 2.8A SOT-23 |
28,908 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 2.8A (Ta) | 2.5V, 4.5V | 85mOhm @ 3.6A, 4.5V | 1V @ 250µA | 3.5nC @ 4V | ±8V | 150pF @ 5V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 80V 1.1A 3DFN |
155,172 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 1.1A (Ta) | 4.5V, 10V | 450mOhm @ 1.1A, 10V | 2.7V @ 250µA | 4.5nC @ 10V | ±20V | 130pF @ 40V | - | 400mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1010D-3 | 3-XDFN Exposed Pad |
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Nexperia |
MOSFET P-CH 30V 2.4A 3DFN |
44,676 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.4A (Ta) | 4.5V, 10V | 120mOhm @ 2.4A, 10V | 2.5V @ 250µA | 11nC @ 10V | ±20V | 309pF @ 15V | - | 400mW (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1010D-3 | 3-XDFN Exposed Pad |
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Infineon Technologies |
MOSFET P-CH 20V 2.6A SOT23 |
544,686 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 2.6A (Ta) | 2.5V, 4.5V | 135mOhm @ 2.6A, 4.5V | 1.1V @ 10µA | 2.9nC @ 4.5V | ±12V | 220pF @ 16V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 60V 3.1A SOT23 |
227,940 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 3.1A (Tc) | 4.5V, 10V | 190mOhm @ 3A, 10V | 2.5V @ 250µA | 8.2nC @ 10V | ±20V | 425pF @ 30V | - | 1.56W (Tc) | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 20V 4.7A SOT23 |
22,980 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 4.7A (Tc) | 1.8V, 4.5V | 50mOhm @ 3A, 4.5V | 800mV @ 250µA | 9.6nC @ 4.5V | ±10V | 850pF @ 10V | - | 1.56W (Tc) | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 8V 1.4A SOT-323 |
2,010,822 |
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- | P-Channel | MOSFET (Metal Oxide) | 8V | 1.4A (Ta) | 1.8V, 4.5V | 100mOhm @ 1A, 4.5V | 700mV @ 250µA | 6.4nC @ 5V | ±8V | 640pF @ 8V | - | 290mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 (SOT323) | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET N-CH 12V 9.3A SC59 |
238,176 |
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- | N-Channel | MOSFET (Metal Oxide) | 12V | 9.3A (Ta) | 1.2V, 2.5V | 10mOhm @ 9.7A, 4.5V | 800mV @ 250µA | 50.6nC @ 8V | ±8V | 2426pF @ 10V | - | 680mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET N-CH 30V 8A HSMT8 |
23,670 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 8A (Ta) | 4.5V, 10V | 15.2mOhm @ 8A, 10V | 2.5V @ 1mA | 14.5nC @ 10V | ±20V | 660pF @ 15V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Nexperia |
MOSFET P-CH 20V 1A SOT323 |
1,069,356 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1A (Ta) | 4.5V | 200mOhm @ 1A, 4.5V | 1.15V @ 250µA | 3.9nC @ 4.5V | ±12V | 280pF @ 10V | - | 290mW (Ta), 1.67W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET P-CH 20V 1.5A 3-DFN |
319,638 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.8V, 4.5V | 150mOhm @ 950mA, 4.5V | 1V @ 250µA | - | ±12V | 320pF @ 16V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-DFN1411 (1.4x1.1) | 3-XDFN |
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Rohm Semiconductor |
MOSFET P-CH 30V 0.25A SOT-323 |
83,940 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 250mA (Ta) | 4V, 10V | 1.4Ohm @ 250mA, 10V | 2.5V @ 1mA | - | ±20V | 30pF @ 10V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | UMT3 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET N CH 30V 7.3A 8-SO |
47,328 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.3A (Ta) | 4.5V, 10V | 21mOhm @ 10A, 10V | 2.1V @ 250µA | 13.2nC @ 10V | ±25V | 697pF @ 15V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE MOSF |
27,024 |
|
π-MOSV | N-Channel | MOSFET (Metal Oxide) | 60V | 650mA (Ta) | 3V, 5V | 1.8Ohm @ 150mA, 5V | 2V @ 1mA | 1.5nC @ 5V | ±12V | 60pF @ 12V | - | 1W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Panasonic Electronic Components |
MOSFET N CH 20V 2A SMINI3-G1-B |
392,226 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 2.5V, 4V | 110mOhm @ 1A, 4V | 1.3V @ 1mA | - | ±10V | 290pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | SMini3-G1-B | SC-70, SOT-323 |
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Nexperia |
MOSFET N-CH 30V SOT23 |
98,412 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 5.7A (Ta) | 1.8V, 4.5V | 23mOhm @ 5.7A, 4.5V | 900mV @ 250µA | 18.6nC @ 4.5V | ±12V | 1150pF @ 15V | - | 510mW (Ta), 6.94W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 1.2A SOT23-3 |
197,118 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 1.2A (Ta) | 4.5V, 10V | 480mOhm @ 1.2A, 10V | 2.5V @ 25µA | 0.67nC @ 4.5V | ±16V | 64pF @ 25V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 30V 1.2A SC70-3 |
1,306,500 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 1.2A (Ta) | 2.5V, 10V | 150mOhm @ 1.2A, 10V | 1.5V @ 250µA | 10.1nC @ 10V | ±12V | 430pF @ 15V | - | 290mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 (SOT323) | SC-70, SOT-323 |
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ON Semiconductor |
MOSFET P-CH 20V 0.86A SOT-563 |
377,766 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 860mA (Ta) | 1.8V, 4.5V | 150mOhm @ 950mA, 4.5V | 1V @ 250µA | 5.6nC @ 4.5V | ±8V | 458pF @ 16V | - | 170mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563 | SOT-563, SOT-666 |
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ON Semiconductor |
MOSFET N-CH 20V 6.2A 6-SSOT |
27,306 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 20V | 6.2A (Ta) | 2.5V, 4.5V | 24mOhm @ 6.2A, 4.5V | 1.5V @ 250µA | 12nC @ 4.5V | ±12V | 895pF @ 10V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
|
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|
Vishay Siliconix |
MOSFET P-CH 60V 185MA TO-236 |
666,246 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 185mA (Ta) | 4.5V, 10V | 6Ohm @ 500mA, 10V | 3V @ 250µA | 1.7nC @ 15V | ±20V | 23pF @ 25V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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|
Nexperia |
MOSFET P-CH 20V SOT23 |
111,090 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 3.6A (Ta) | 1.5V, 4.5V | 60mOhm @ 3.6A, 4.5V | 900mV @ 250µA | 12nC @ 4.5V | ±12V | 744pF @ 20V | - | 490mW (Ta), 4.63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
|
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|
ON Semiconductor |
MOSFET N-CH 30V 2A MCPH3 |
50,610 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 1.8V, 4.5V | 165mOhm @ 1A, 4.5V | - | 1.7nC @ 4.5V | ±12V | 130pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | 3-MCPH | 3-SMD, Flat Leads |
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Infineon Technologies |
MOSFET P-CH 30V 3.6A SOT-23-3 |
245,898 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 3.6A (Ta) | 4.5V, 10V | 64mOhm @ 3.6A, 10V | 2.4V @ 10µA | 4.8nC @ 4.5V | ±20V | 388pF @ 25V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 20V SOT23 |
264,048 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 6.8A (Ta) | 1.8V, 4.5V | 20mOhm @ 6.8A, 4.5V | 900mV @ 250µA | 20.2nC @ 4.5V | ±12V | 1240pF @ 10V | - | 510mW (Ta), 6.94W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |