트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 651/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 25V 50A D2PAK |
6,048 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 5.9mOhm @ 30A, 10V | 2V @ 40µA | 22nC @ 5V | ±20V | 2653pF @ 15V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 50A D2PAK |
4,896 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 8.9mOhm @ 30A, 10V | 2V @ 20µA | 13nC @ 5V | ±20V | 1642pF @ 15V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 30A D2PAK |
8,442 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 30A (Tc) | 4.5V, 10V | 13.6mOhm @ 30A, 10V | 2V @ 20µA | 8.3nC @ 5V | ±20V | 1043pF @ 15V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 50A DPAK |
8,154 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 3.8mOhm @ 50A, 10V | 2V @ 80µA | 41nC @ 5V | ±20V | 5199pF @ 15V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 50A DPAK |
8,172 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 5.1mOhm @ 30A, 10V | 2V @ 50µA | 25nC @ 5V | ±20V | 3110pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 50A DPAK |
5,886 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 5.7mOhm @ 30A, 10V | 2V @ 40µA | 22nC @ 5V | ±20V | 2653pF @ 15V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 50A DPAK |
6,570 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 8.6mOhm @ 30A, 10V | 2V @ 20µA | 13nC @ 5V | ±20V | 1642pF @ 15V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 30A DPAK |
8,730 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 30A (Tc) | 4.5V, 10V | 12.8mOhm @ 30A, 10V | 2V @ 20µA | 8.3nC @ 5V | ±20V | 1043pF @ 15V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 50A DPAK |
2,178 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 5.1mOhm @ 30A, 10V | 2V @ 50µA | 25nC @ 5V | ±20V | 3110pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | P-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 1.8A D2PAK |
4,572 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5nC @ 10V | ±20V | 200pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 3.2A D2PAK |
6,246 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17nC @ 10V | ±20V | 400pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 100A D2PAK |
8,622 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 3mOhm @ 80A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 7020pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 100A D2PAK |
3,454 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 2.7mOhm @ 80A, 10V | 2V @ 250µA | 220nC @ 10V | ±20V | 8180pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 21A D2PAK |
8,496 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 21A (Tc) | 10V | 80mOhm @ 15A, 10V | 4V @ 44µA | 38.4nC @ 10V | ±20V | 865pF @ 25V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 35A D2PAK |
5,328 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 44mOhm @ 26.4A, 10V | 4V @ 83µA | 65nC @ 10V | ±20V | 1570pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 35A DPAK |
5,994 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 44mOhm @ 26.4A, 10V | - | 65nC @ 10V | ±20V | 1570pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 73A D2PAK |
8,712 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 73A (Tc) | 4.5V, 10V | 8.1mOhm @ 36A, 10V | 2V @ 55µA | 46.2nC @ 10V | ±20V | 1710pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 80A D2PAK |
6,678 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 4.9mOhm @ 55A, 10V | 2V @ 110µA | 89.7nC @ 10V | ±20V | 3320pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 80A D2PAK |
4,590 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 5.9mOhm @ 80A, 10V | 2V @ 80µA | 68nC @ 10V | ±20V | 2530pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 560V 1.8A DPAK |
8,604 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 3.9V @ 80µA | 9nC @ 10V | ±20V | 190pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 1.8A DPAK |
5,652 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5nC @ 10V | ±20V | 200pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 560V 3.2A DPAK |
7,470 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 15nC @ 10V | ±20V | 350pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 3.2A DPAK |
8,982 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17nC @ 10V | ±20V | 400pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 560V 4.5A DPAK |
3,510 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 22nC @ 10V | ±20V | 470pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 4.5A DPAK |
4,392 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25nC @ 10V | ±20V | 490pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V 6A DPAK |
3,888 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Ta) | 10V | 900mOhm @ 3.8A, 10V | 3.9V @ 250µA | 41nC @ 10V | ±20V | 785pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A DPAK |
8,622 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27nC @ 10V | ±20V | 790pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 560V 7.6A DPAK |
8,136 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 7.6A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 32nC @ 10V | ±20V | 750pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V 9.7A DPAK |
4,554 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 9.7A (Tc) | 4.5V, 10V | 250mOhm @ 6.8A, 10V | 2V @ 250µA | 21nC @ 10V | ±20V | 450pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 100A DPAK |
6,660 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 4.2mOhm @ 50A, 10V | 2V @ 100µA | 89.7nC @ 10V | ±20V | 3320pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-5 | TO-252-5, DPak (4 Leads + Tab), TO-252AD |