트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 777/999
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설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Vishay Siliconix |
MOSFET N-CH 30V 50A 10-POLARPAK |
4,644 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 7.2mOhm @ 11A, 10V | 3V @ 250µA | 35nC @ 10V | ±20V | 1600pF @ 15V | - | 5.2W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (S) | 10-PolarPAK® (S) |
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Vishay Siliconix |
MOSFET N-CH 30V 60A 10-POLARPAK |
5,634 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 1.7mOhm @ 25A, 10V | 2V @ 250µA | 250nC @ 10V | ±12V | 13000pF @ 15V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (L) | 10-PolarPAK® (L) |
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Vishay Siliconix |
MOSFET N-CH 20V 50A 10-POLARPAK |
7,398 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 50A (Tc) | 2.5V, 4.5V | 3.5mOhm @ 18A, 4.5V | 2V @ 250µA | 143nC @ 10V | ±12V | 4300pF @ 10V | - | 5.2W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (S) | 10-PolarPAK® (S) |
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Vishay Siliconix |
MOSFET N-CH 20V 50A 10-POLARPAK |
2,790 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 50A (Tc) | 4.5V, 10V | 3.4mOhm @ 18.3A, 10V | 3V @ 250µA | 78nC @ 10V | ±20V | 4200pF @ 10V | - | 5.2W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (S) | 10-PolarPAK® (S) |
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Vishay Siliconix |
MOSFET N-CH 30V 50A 10-POLARPAK |
4,176 |
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WFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 4.2mOhm @ 16A, 10V | 2V @ 250µA | 115nC @ 10V | ±12V | 5500pF @ 15V | - | 5.2W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (S) | 10-PolarPAK® (S) |
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Vishay Siliconix |
MOSFET N-CH 40V 50A 10-POLARPAK |
8,298 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 5.5mOhm @ 14A, 10V | 3V @ 250µA | 77nC @ 10V | ±20V | 3800pF @ 20V | - | 5.2W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (S) | 10-PolarPAK® (S) |
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Vishay Siliconix |
MOSFET N-CH 20V SOT23-3 |
4,662 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | - | 2.5V, 4.5V | 400mOhm @ 600mA, 4.5V | 1V @ 50µA | 2nC @ 4.5V | ±8V | - | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 20V 420MA SOT23-3 |
8,100 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 420mA (Ta) | 4.5V, 10V | 1Ohm @ 300mA, 10V | 3V @ 250µA | 1.5nC @ 10V | ±20V | - | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 0.58A SOT23-3 |
8,010 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | - | 2.5V, 4.5V | 650mOhm @ 580mA, 4.5V | 1V @ 50µA | 2.2nC @ 4.5V | ±8V | - | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 30V 385MA SOT23-3 |
6,300 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 385mA (Ta) | 4.5V, 10V | 1.4Ohm @ 500mA, 10V | 3V @ 250µA | 1nC @ 10V | ±20V | 31pF @ 15V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 270MA TO92-3 |
4,086 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 4.5V, 10V | 6Ohm @ 500mA, 10V | 3V @ 250µA | 3nC @ 15V | ±20V | - | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-226AA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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ON Semiconductor |
MOSFET N-CH 40V 80A TO-262AB |
5,328 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 26A (Ta), 80A (Tc) | 10V | 2.7mOhm @ 80A, 10V | 4V @ 250µA | 280nC @ 10V | ±20V | 15000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET P-CH 30V 3A 8-SO |
7,560 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 3A (Ta) | 4.5V, 10V | 115mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 10V | ±25V | 455pF @ 15V | Schottky Diode (Isolated) | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 3A TO-3PN |
6,156 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 3A (Ta) | 10V | 4.3Ohm @ 1.5A, 10V | 4V @ 1mA | 25nC @ 10V | ±30V | 750pF @ 25V | - | 125W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 8A TO-3PN |
5,400 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 8A (Ta) | 10V | 1.4Ohm @ 4A, 10V | 4V @ 1mA | 58nC @ 10V | ±30V | 2040pF @ 25V | - | 85W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N)IS | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 14A TO-3PN |
3,348 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Ta) | 10V | 400mOhm @ 7A, 10V | 4V @ 1mA | 58nC @ 10V | ±30V | 2600pF @ 10V | - | 80W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N)IS | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 18A TO-3PN |
3,672 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 18A (Ta) | 10V | 270mOhm @ 10A, 10V | 4V @ 1mA | 80nC @ 10V | ±30V | 3720pF @ 10V | - | 90W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N)IS | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 30A TO-3PN |
7,344 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 30A (Ta) | 10V | 68mOhm @ 15A, 10V | 3.5V @ 1mA | 132nC @ 10V | ±20V | 5400pF @ 10V | - | 150W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 20A TO220SM |
6,246 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 20A (Ta) | 10V | 105mOhm @ 10A, 10V | 3.5V @ 1mA | 100nC @ 10V | ±20V | 4000pF @ 10V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | TO-220SM | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 30A TO-3PN |
2,268 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 30A (Ta) | 10V | 68mOhm @ 15A, 10V | 3.5V @ 1mA | 132nC @ 10V | ±20V | 5400pF @ 10V | - | 90W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N)IS | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 12A TO220SM |
6,570 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Ta) | 10V | 520mOhm @ 6A, 10V | 4V @ 1mA | 45nC @ 10V | ±30V | 2040pF @ 10V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | TO-220SM | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 45A TO220SM |
6,462 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta) | 10V | 12mOhm @ 25A, 10V | 3V @ 1mA | 66nC @ 10V | ±20V | 2300pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | TO-220SM | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 50A TO-3P(L) |
6,174 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 50A (Ta) | 10V | 95mOhm @ 25A, 10V | 3.4V @ 1mA | 280nC @ 10V | ±30V | 11000pF @ 10V | - | 250W (Tc) | 150°C (TJ) | Through Hole | TO-3P(L) | TO-3PL |
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ON Semiconductor |
MOSFET N-CH 500V 5.5A DPAK |
3,438 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 5.5A (Tc) | 10V | 1.15Ohm @ 2.75A, 10V | 5V @ 250µA | 19.8nC @ 10V | ±30V | 960pF @ 25V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 16.1A TO-263AB |
7,902 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 16.1A (Ta), 50A (Tc) | 4.5V, 10V | 7mOhm @ 17.6A, 10V | 3V @ 250µA | 66nC @ 10V | ±20V | 3545pF @ 20V | - | 3.1W (Ta), 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 30V 12A POWER56 |
7,488 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 28A (Tc) | 4.5V, 10V | 9mOhm @ 12A, 10V | 3V @ 250µA | 21nC @ 10V | ±20V | 1265pF @ 15V | - | 2.5W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 5A TO-220SIS |
5,328 |
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π-MOSIV | N-Channel | MOSFET (Metal Oxide) | 900V | 5A (Ta) | 10V | 2.5Ohm @ 3A, 10V | 4V @ 1mA | 28nC @ 10V | ±30V | 1150pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 200V 33A D2PAK |
7,290 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 33A (Tc) | 10V, 15V | 59mOhm @ 20A, 15V | 4.5V @ 250µA | 113nC @ 15V | ±25V | 2735pF @ 25V | - | 3.12W (Ta), 156W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 55V 75A TO-3PN |
7,848 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 208nC @ 20V | ±20V | 4855pF @ 25V | - | 288.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET N-CH 40V 160A D2PAK-7 |
3,418 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 1.6mOhm @ 160A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 6930pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |