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트랜지스터-FET, MOSFET-단일

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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 813/999
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
FET 유형
기술
드레인-소스 전압 (Vdss)
전류-25 ° C에서 연속 드레인 (Id)
드라이브 전압 (최대 Rds On, 최소 Rds On)
Rds On (최대) @ Id, Vgs
Vgs (th) (최대) @ Id
게이트 충전 (Qg) (최대) @ Vgs
Vgs (최대)
입력 커패시턴스 (Ciss) (최대) @ Vds
FET 기능
전력 손실 (최대)
작동 온도
장착 유형
공급자 장치 패키지
패키지 / 케이스
TLC530TU
ON Semiconductor
MOSFET N-CH 330V 7A TO-220
6,444
-
N-Channel
MOSFET (Metal Oxide)
330V
7A (Ta)
-
-
-
-
-
-
-
-
-
Through Hole
TO-220-3
TO-220-3
2SJ304(F)
Toshiba Semiconductor and Storage
MOSFET P-CH 60V 14A TO220NIS
6,246
-
P-Channel
MOSFET (Metal Oxide)
60V
14A (Ta)
4V, 10V
120mOhm @ 7A, 10V
2V @ 1mA
45nC @ 10V
±20V
1200pF @ 10V
-
40W (Tc)
150°C (TJ)
Through Hole
TO-220NIS
TO-220-3 Full Pack
2SJ360(F)
Toshiba Semiconductor and Storage
MOSFET P-CH 60V 1A SC-62
4,824
-
P-Channel
MOSFET (Metal Oxide)
60V
1A (Ta)
4V, 10V
730mOhm @ 500mA, 10V
2V @ 1mA
6.5nC @ 10V
±20V
155pF @ 10V
-
500mW (Ta)
150°C (TJ)
Surface Mount
PW-MINI
TO-243AA
2SJ360(TE12L,F)
Toshiba Semiconductor and Storage
MOSFET P-CH 60V 1A SC-62
3,726
-
P-Channel
MOSFET (Metal Oxide)
60V
1A (Ta)
4V, 10V
730mOhm @ 500mA, 10V
2V @ 1mA
6.5nC @ 10V
±20V
155pF @ 10V
-
500mW (Ta)
150°C (TJ)
Surface Mount
PW-MINI
TO-243AA
2SJ380(F)
Toshiba Semiconductor and Storage
MOSFET P-CH 100V 12A TO220NIS
6,606
-
P-Channel
MOSFET (Metal Oxide)
100V
12A (Ta)
4V, 10V
210mOhm @ 6A, 10V
2V @ 1mA
48nC @ 10V
±20V
1100pF @ 10V
-
35W (Tc)
150°C (TJ)
Through Hole
TO-220NIS
TO-220-3 Full Pack
2SJ610(TE16L1,NQ)
Toshiba Semiconductor and Storage
MOSFET P-CH 250V 2A PW-MOLD
8,262
-
P-Channel
MOSFET (Metal Oxide)
250V
2A (Ta)
10V
2.55Ohm @ 1A, 10V
3.5V @ 1mA
24nC @ 10V
±20V
381pF @ 10V
-
20W (Ta)
150°C (TJ)
Surface Mount
PW-MOLD
TO-252-3, DPak (2 Leads + Tab), SC-63
2SJ681(Q)
Toshiba Semiconductor and Storage
MOSFET P-CH 60V 5A PW-MOLD
8,892
-
P-Channel
MOSFET (Metal Oxide)
60V
5A (Ta)
4V, 10V
170mOhm @ 2.5A, 10V
2V @ 1mA
15nC @ 10V
±20V
700pF @ 10V
-
20W (Ta)
150°C (TJ)
Through Hole
PW-MOLD2
TO-251-3 Stub Leads, IPak
2SK1119(F)
Toshiba Semiconductor and Storage
MOSFET N-CH 1000V 4A TO-220AB
6,462
-
N-Channel
MOSFET (Metal Oxide)
1000V
4A (Ta)
10V
3.8Ohm @ 2A, 10V
3.5V @ 1mA
60nC @ 10V
±20V
700pF @ 25V
-
100W (Tc)
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
2SK2507(F)
Toshiba Semiconductor and Storage
MOSFET N-CH 50V 25A TO220NIS
2,376
-
N-Channel
MOSFET (Metal Oxide)
50V
25A (Ta)
4V, 10V
46mOhm @ 12A, 10V
2V @ 1mA
25nC @ 10V
±20V
900pF @ 10V
-
30W (Tc)
150°C (TJ)
Through Hole
TO-220NIS
TO-220-3 Full Pack
2SK2544(F)
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 6A TO-220AB
3,526
-
N-Channel
MOSFET (Metal Oxide)
600V
6A (Ta)
10V
1.25Ohm @ 3A, 10V
4V @ 1mA
30nC @ 10V
±30V
1300pF @ 10V
-
80W (Tc)
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
2SK2744(F)
Toshiba Semiconductor and Storage
MOSFET N-CH 50V 45A TO-3PN
6,750
-
N-Channel
MOSFET (Metal Oxide)
50V
45A (Ta)
10V
20mOhm @ 25A, 10V
3.5V @ 1mA
68nC @ 10V
±20V
2300pF @ 10V
-
125W (Tc)
150°C (TJ)
Through Hole
TO-3P(N)
TO-3P-3, SC-65-3
2SK2845(TE16L1,Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 900V 1A DP
5,202
-
N-Channel
MOSFET (Metal Oxide)
900V
1A (Ta)
10V
9Ohm @ 500mA, 10V
4V @ 1mA
15nC @ 10V
±30V
350pF @ 25V
-
40W (Tc)
150°C (TJ)
Surface Mount
DP
TO-252-3, DPak (2 Leads + Tab), SC-63
2SK2866(F)
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 10A TO-220AB
7,218
-
N-Channel
MOSFET (Metal Oxide)
600V
10A (Ta)
10V
750mOhm @ 5A, 10V
4V @ 1mA
45nC @ 10V
±30V
2040pF @ 10V
-
125W (Tc)
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
2SK2883(TE24L,Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 800V 3A TO220SM
8,010
-
N-Channel
MOSFET (Metal Oxide)
800V
3A (Ta)
10V
3.6Ohm @ 1.5A, 10V
4V @ 1mA
25nC @ 10V
±30V
750pF @ 25V
-
75W (Tc)
150°C (TJ)
Surface Mount
TO-220SM
TO-252-3, DPak (2 Leads + Tab), SC-63
2SK3313(Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 500V 12A TO220NIS
6,984
-
N-Channel
MOSFET (Metal Oxide)
500V
12A (Ta)
10V
620mOhm @ 6A, 10V
4V @ 1mA
45nC @ 10V
±30V
2040pF @ 10V
-
40W (Tc)
150°C (TJ)
Through Hole
TO-220NIS
TO-220-3 Full Pack
2SK3342(TE16L1,NQ)
Toshiba Semiconductor and Storage
MOSFET N-CH 250V 4.5A PW-MOLD
3,400
-
N-Channel
MOSFET (Metal Oxide)
250V
4.5A (Ta)
10V
1Ohm @ 2.5A, 10V
3.5V @ 1mA
10nC @ 10V
±20V
440pF @ 10V
-
20W (Tc)
150°C (TJ)
Surface Mount
PW-MOLD
TO-252-3, DPak (2 Leads + Tab), SC-63
2SK3388(TE24L,Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 250V 20A SC-97
2,466
-
N-Channel
MOSFET (Metal Oxide)
250V
20A (Ta)
10V
105mOhm @ 10A, 10V
3.5V @ 1mA
100nC @ 10V
±20V
4000pF @ 10V
-
125W (Tc)
150°C (TJ)
Surface Mount
4-TFP (9.2x9.2)
SC-97
2SK3403(Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 450V 13A TO220FL
3,996
-
N-Channel
MOSFET (Metal Oxide)
450V
13A (Ta)
10V
400mOhm @ 6A, 10V
5V @ 1mA
34nC @ 10V
±30V
1600pF @ 25V
-
100W (Tc)
150°C (TJ)
Through Hole
TO-220FL
TO-220-3, Short Tab
2SK3462(TE16L1,NQ)
Toshiba Semiconductor and Storage
MOSFET N-CH 250V 3A PW-MOLD
6,354
-
N-Channel
MOSFET (Metal Oxide)
250V
3A (Ta)
10V
1.7Ohm @ 1.5A, 10V
3.5V @ 1mA
12nC @ 10V
±20V
267pF @ 10V
-
20W (Tc)
150°C (TJ)
Surface Mount
PW-MOLD
TO-252-3, DPak (2 Leads + Tab), SC-63
2SK3466(TE24L,Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 500V 5A SC-97
3,204
-
N-Channel
MOSFET (Metal Oxide)
500V
5A (Ta)
10V
1.5Ohm @ 5A, 10V
4V @ 1mA
17nC @ 10V
±30V
780pF @ 10V
-
50W (Tc)
150°C (TJ)
Surface Mount
4-TFP (9.2x9.2)
SC-97
2SK3662(F)
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 35A TO220NIS
4,356
U-MOSIII
N-Channel
MOSFET (Metal Oxide)
60V
35A (Ta)
4V, 10V
12.5mOhm @ 18A, 10V
2.5V @ 1mA
91nC @ 10V
±20V
5120pF @ 10V
-
35W (Tc)
150°C (TJ)
Through Hole
TO-220NIS
TO-220-3 Full Pack
2SK3844(Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 45A TO220NIS
5,508
-
N-Channel
MOSFET (Metal Oxide)
60V
45A (Ta)
10V
5.8mOhm @ 23A, 10V
4V @ 1mA
196nC @ 10V
±20V
12400pF @ 10V
-
45W (Tc)
150°C (TJ)
Through Hole
TO-220NIS
TO-220-3 Full Pack
2SK3868(Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 500V 5A TO220SIS
3,456
-
N-Channel
MOSFET (Metal Oxide)
500V
5A (Ta)
10V
1.7Ohm @ 2.5A, 10V
4V @ 1mA
16nC @ 10V
±30V
550pF @ 25V
-
35W (Tc)
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack
2SK3906(Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 20A TO-3PN
8,064
-
N-Channel
MOSFET (Metal Oxide)
600V
20A (Ta)
10V
330mOhm @ 10A, 10V
4V @ 1mA
60nC @ 10V
±30V
4250pF @ 25V
-
150W (Tc)
150°C (TJ)
Through Hole
TO-3P(N)
TO-3P-3, SC-65-3
2SK4016(Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 13A TO220SIS
6,012
-
N-Channel
MOSFET (Metal Oxide)
600V
13A (Ta)
10V
500mOhm @ 6.5A, 10V
4V @ 1mA
62nC @ 10V
±30V
3100pF @ 25V
-
50W (Tc)
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack
2SK4017(Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 5A PW-MOLD2
3,418
U-MOSIII
N-Channel
MOSFET (Metal Oxide)
60V
5A (Ta)
4V, 10V
100mOhm @ 2.5A, 10V
2.5V @ 1mA
15nC @ 10V
±20V
730pF @ 10V
-
20W (Tc)
150°C (TJ)
Through Hole
PW-MOLD2
TO-251-3 Stub Leads, IPak
2SK4021(Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 250V 4.5A PW-MOLD2
2,178
-
N-Channel
MOSFET (Metal Oxide)
250V
4.5A (Ta)
10V
1Ohm @ 2.5A, 10V
3.5V @ 1mA
10nC @ 10V
±20V
440pF @ 10V
-
20W (Tc)
150°C (TJ)
Through Hole
PW-MOLD2
TO-251-3 Stub Leads, IPak
TPC8026(TE12L,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 13A 8-SOIC
4,572
-
N-Channel
MOSFET (Metal Oxide)
30V
13A (Ta)
4.5V, 10V
6.6mOhm @ 6.5A, 10V
2.5V @ 1mA
42nC @ 10V
±20V
1800pF @ 10V
-
1W (Ta)
150°C (TJ)
Surface Mount
8-SOP (5.5x6.0)
8-SOIC (0.173", 4.40mm Width)
TPC8036-H(TE12L,QM
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 18A 8-SOIC
3,204
U-MOSVI-H
N-Channel
MOSFET (Metal Oxide)
30V
18A (Ta)
4.5V, 10V
4.5mOhm @ 9A, 10V
2.3V @ 1mA
49nC @ 10V
±20V
4600pF @ 10V
-
1W (Ta)
150°C (TJ)
Surface Mount
8-SOP (5.5x6.0)
8-SOIC (0.173", 4.40mm Width)
TPCA8025(TE12L,Q,M
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 40A 8SOIC ADV
3,708
U-MOSIV
N-Channel
MOSFET (Metal Oxide)
30V
40A (Ta)
4.5V, 10V
3.5mOhm @ 20A, 10V
2.5V @ 1mA
49nC @ 10V
±20V
2200pF @ 10V
-
1.6W (Ta), 45W (Tc)
150°C (TJ)
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN