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트랜지스터-FET, MOSFET-단일

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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 822/999
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
FET 유형
기술
드레인-소스 전압 (Vdss)
전류-25 ° C에서 연속 드레인 (Id)
드라이브 전압 (최대 Rds On, 최소 Rds On)
Rds On (최대) @ Id, Vgs
Vgs (th) (최대) @ Id
게이트 충전 (Qg) (최대) @ Vgs
Vgs (최대)
입력 커패시턴스 (Ciss) (최대) @ Vds
FET 기능
전력 손실 (최대)
작동 온도
장착 유형
공급자 장치 패키지
패키지 / 케이스
SPS03N60C3BKMA1
Infineon Technologies
MOSFET N-CH 650V 3.2A TO251-3
4,806
CoolMOS™
N-Channel
MOSFET (Metal Oxide)
650V
3.2A (Tc)
10V
1.4Ohm @ 2A, 10V
3.9V @ 135µA
17nC @ 10V
±20V
400pF @ 25V
-
38W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Stub Leads, IPak
SPS04N60C3BKMA1
Infineon Technologies
MOSFET N-CH 650V 4.5A TO251-3
7,974
CoolMOS™
N-Channel
MOSFET (Metal Oxide)
650V
4.5A (Tc)
10V
950mOhm @ 2.8A, 10V
3.9V @ 200µA
25nC @ 10V
±20V
490pF @ 25V
-
50W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Stub Leads, IPak
SPW07N60CFDFKSA1
Infineon Technologies
MOSFET N-CH 650V 6.6A TO-247
5,706
CoolMOS™
N-Channel
MOSFET (Metal Oxide)
650V
6.6A (Tc)
10V
700mOhm @ 4.6A, 10V
5V @ 300µA
47nC @ 10V
±20V
790pF @ 25V
-
83W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
SPW15N60CFDFKSA1
Infineon Technologies
MOSFET N-CH 650V 13.4A TO-247
5,580
CoolMOS™
N-Channel
MOSFET (Metal Oxide)
650V
13.4A (Tc)
10V
330mOhm @ 9.4A, 10V
5V @ 750µA
84nC @ 10V
±20V
1820pF @ 25V
-
156W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
NDB6020P
ON Semiconductor
MOSFET P-CH 20V 24A D2PAK
5,850
-
P-Channel
MOSFET (Metal Oxide)
20V
24A (Tc)
4.5V
50mOhm @ 12A, 4.5V
1V @ 250µA
35nC @ 5V
±8V
1590pF @ 10V
-
60W (Tc)
-65°C ~ 175°C (TJ)
Surface Mount
D²PAK (TO-263AB)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF1324SPBF
Infineon Technologies
MOSFET N-CH 24V 195A D2-PAK
5,220
HEXFET®
N-Channel
MOSFET (Metal Oxide)
24V
195A (Tc)
10V
1.65mOhm @ 195A, 10V
4V @ 250µA
240nC @ 10V
±20V
7590pF @ 24V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF6218SPBF
Infineon Technologies
MOSFET P-CH 150V 27A D2-PAK
4,536
HEXFET®
P-Channel
MOSFET (Metal Oxide)
150V
27A (Tc)
10V
150mOhm @ 16A, 10V
5V @ 250µA
110nC @ 10V
±20V
2210pF @ 25V
-
250W (Tc)
-
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF8734PBF
Infineon Technologies
MOSFET N-CH 30V 21A 8-SOIC
6,030
HEXFET®
N-Channel
MOSFET (Metal Oxide)
30V
21A (Ta)
4.5V, 10V
3.5mOhm @ 21A, 10V
2.35V @ 50µA
30nC @ 4.5V
±20V
3175pF @ 15V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRFS3004-7PPBF
Infineon Technologies
MOSFET N-CH 40V 240A D2PAK-7
2,070
HEXFET®
N-Channel
MOSFET (Metal Oxide)
40V
240A (Tc)
10V
1.25mOhm @ 195A, 10V
4V @ 250µA
240nC @ 10V
±20V
9130pF @ 25V
-
380W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
IRFS3004PBF
Infineon Technologies
MOSFET N-CH 40V 195A D2PAK
2,178
HEXFET®
N-Channel
MOSFET (Metal Oxide)
40V
195A (Ta)
10V
1.75mOhm @ 195A, 10V
4V @ 250µA
240nC @ 10V
±20V
9200pF @ 25V
-
380W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS4020PBF
Infineon Technologies
MOSFET N-CH 200V 18A D2PAK
8,406
-
N-Channel
MOSFET (Metal Oxide)
200V
18A (Tc)
10V
105mOhm @ 11A, 10V
4.9V @ 100µA
29nC @ 10V
±20V
1200pF @ 50V
-
100W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS4115-7PPBF
Infineon Technologies
MOSFET N-CH 150V 105A D2PAK-7
8,838
HEXFET®
N-Channel
MOSFET (Metal Oxide)
150V
105A (Tc)
10V
11.8mOhm @ 63A, 10V
5V @ 250µA
110nC @ 10V
±20V
5320pF @ 50V
-
380W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
IRFS4115PBF
Infineon Technologies
MOSFET N-CH 150V 195A D2-PAK
8,244
HEXFET®
N-Channel
MOSFET (Metal Oxide)
150V
195A (Tc)
10V
12.1mOhm @ 62A, 10V
5V @ 250µA
120nC @ 10V
±20V
5270pF @ 50V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS4127PBF
Infineon Technologies
MOSFET N-CH 200V 72A D2-PAK
3,582
HEXFET®
N-Channel
MOSFET (Metal Oxide)
200V
72A (Tc)
10V
22mOhm @ 44A, 10V
5V @ 250µA
150nC @ 10V
±20V
5380pF @ 50V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS4615PBF
Infineon Technologies
MOSFET N-CH 150V 33A D2-PAK
2,196
HEXFET®
N-Channel
MOSFET (Metal Oxide)
150V
33A (Tc)
10V
42mOhm @ 21A, 10V
5V @ 100µA
40nC @ 10V
±20V
1750pF @ 50V
-
144W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS5615PBF
Infineon Technologies
MOSFET N-CH 150V 33A D2PAK
5,544
-
N-Channel
MOSFET (Metal Oxide)
150V
33A (Tc)
10V
42mOhm @ 21A, 10V
5V @ 100µA
40nC @ 10V
±20V
1750pF @ 50V
-
144W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRLR3636PBF
Infineon Technologies
MOSFET N-CH 60V 50A D-PAK
6,336
HEXFET®
N-Channel
MOSFET (Metal Oxide)
60V
50A (Tc)
4.5V, 10V
6.8mOhm @ 50A, 10V
2.5V @ 100µA
49nC @ 4.5V
±16V
3779pF @ 50V
-
143W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
IRLS3034-7PPBF
Infineon Technologies
MOSFET N-CH 40V 240A D2PAK-7
6,264
HEXFET®
N-Channel
MOSFET (Metal Oxide)
40V
240A (Tc)
4.5V, 10V
1.4mOhm @ 200A, 10V
2.5V @ 250µA
180nC @ 4.5V
±20V
10990pF @ 40V
-
380W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
IRLS3034PBF
Infineon Technologies
MOSFET N-CH 40V 195A D2-PAK
8,820
HEXFET®
N-Channel
MOSFET (Metal Oxide)
40V
195A (Tc)
4.5V, 10V
1.7mOhm @ 195A, 10V
2.5V @ 250µA
162nC @ 4.5V
±20V
10315pF @ 25V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRLS3036PBF
Infineon Technologies
MOSFET N-CH 60V 195A D2-PAK
3,436
HEXFET®
N-Channel
MOSFET (Metal Oxide)
60V
195A (Tc)
4.5V, 10V
2.4mOhm @ 165A, 10V
2.5V @ 250µA
140nC @ 4.5V
±16V
11210pF @ 50V
-
380W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRLS4030-7PPBF
Infineon Technologies
MOSFET N-CH 100V 190A D2PAK-7
3,960
HEXFET®
N-Channel
MOSFET (Metal Oxide)
100V
190A (Tc)
4.5V, 10V
3.9mOhm @ 110A, 10V
2.5V @ 250µA
140nC @ 4.5V
±16V
11490pF @ 50V
-
370W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
IRLS4030PBF
Infineon Technologies
MOSFET N-CH 100V 180A D2PAK
8,460
HEXFET®
N-Channel
MOSFET (Metal Oxide)
100V
180A (Tc)
4.5V, 10V
4.3mOhm @ 110A, 10V
2.5V @ 250µA
130nC @ 4.5V
±16V
11360pF @ 50V
-
370W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF1324LPBF
Infineon Technologies
MOSFET N-CH 24V 195A TO262
2,358
HEXFET®
N-Channel
MOSFET (Metal Oxide)
24V
195A (Tc)
10V
1.65mOhm @ 195A, 10V
4V @ 250µA
240nC @ 10V
±20V
7590pF @ 24V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I²Pak, TO-262AA
IRFB3307ZGPBF
Infineon Technologies
MOSFET N-CH 75V 120A TO-220AB
5,220
HEXFET®
N-Channel
MOSFET (Metal Oxide)
75V
120A (Tc)
10V
5.8mOhm @ 75A, 10V
4V @ 150µA
110nC @ 10V
±20V
4750pF @ 50V
-
230W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRFB4321GPBF
Infineon Technologies
MOSFET N-CH 150V 83A TO-220AB
8,118
HEXFET®
N-Channel
MOSFET (Metal Oxide)
150V
83A (Tc)
10V
15mOhm @ 33A, 10V
5V @ 250µA
110nC @ 10V
±30V
4460pF @ 25V
-
330W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRFSL3004PBF
Infineon Technologies
MOSFET N-CH 40V 195A TO262
5,598
HEXFET®
N-Channel
MOSFET (Metal Oxide)
40V
195A (Ta)
10V
1.75mOhm @ 195A, 10V
4V @ 250µA
240nC @ 10V
±20V
9200pF @ 25V
-
380W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I²Pak, TO-262AA
IRFSL4020PBF
Infineon Technologies
MOSFET N-CH 200V 18A TO262
6,804
-
N-Channel
MOSFET (Metal Oxide)
200V
18A (Tc)
10V
105mOhm @ 11A, 10V
4.9V @ 100µA
29nC @ 10V
±20V
1200pF @ 50V
-
100W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I²Pak, TO-262AA
IRFSL4115PBF
Infineon Technologies
MOSFET N-CH 150V 195A TO262
5,184
HEXFET®
N-Channel
MOSFET (Metal Oxide)
150V
195A (Tc)
10V
12.1mOhm @ 62A, 10V
5V @ 250µA
120nC @ 10V
±20V
5270pF @ 50V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I²Pak, TO-262AA
IRFSL4615PBF
Infineon Technologies
MOSFET N-CH 150V 33A TO-262
2,592
HEXFET®
N-Channel
MOSFET (Metal Oxide)
150V
33A (Tc)
10V
42mOhm @ 21A, 10V
5V @ 100µA
40nC @ 10V
±20V
1750pF @ 50V
-
144W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I²Pak, TO-262AA
IRLSL3034PBF
Infineon Technologies
MOSFET N-CH 40V 195A TO262
4,788
HEXFET®
N-Channel
MOSFET (Metal Oxide)
40V
195A (Tc)
4.5V, 10V
1.7mOhm @ 195A, 10V
2.5V @ 250µA
162nC @ 4.5V
±20V
10315pF @ 25V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I²Pak, TO-262AA