트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 86/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET P-CH 60V 18.5A D2PAK |
112,878 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 18.5A (Ta) | 5V | 140mOhm @ 8.5A, 5V | 2V @ 250µA | 22nC @ 5V | ±20V | 1190pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CH 60V 270MA TO92-3 |
166,356 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 10V | 5Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 35pF @ 18V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 100V 320MA TO92-3 |
61,248 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 320mA (Ta) | 5V, 10V | 3Ohm @ 500mA, 10V | 1.5V @ 1mA | - | ±20V | 75pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 200V 180MA TO92-3 |
25,596 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 180mA (Ta) | 3V, 5V | 10Ohm @ 250mA, 5V | 1.5V @ 1mA | - | ±20V | 85pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 400V 0.12A TO92-3 |
13,398 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 120mA (Tj) | 0V | 25Ohm @ 120mA, 0V | - | - | ±20V | 300pF @ 25V | Depletion Mode | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 2.1A SOT223 |
29,502 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 2.1A (Ta) | 5V, 10V | 330mOhm @ 3A, 10V | 3V @ 1mA | - | ±20V | 350pF @ 25V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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STMicroelectronics |
MOSFET N-CH 900V 3A DPAK |
18,918 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 900V | 3A (Tc) | 10V | 4.8Ohm @ 1.5A, 10V | 4.5V @ 50µA | 22.7nC @ 10V | ±30V | 590pF @ 25V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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ON Semiconductor |
MOSFET P-CH 20V 6.5A 8-SOIC |
23,358 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | 2.7V, 4.5V | 35mOhm @ 6.5A, 4.5V | 1V @ 250µA | 80nC @ 4.5V | ±8V | 2330pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 60V 50A D-PAK |
52,542 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta), 50A (Tc) | 6V, 10V | 10.5mOhm @ 50A, 10V | 4V @ 250µA | 37nC @ 10V | ±20V | 1840pF @ 25V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Nexperia |
MOSFET N-CH 40V 75A D2PAK |
15,522 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 5V | 4.4mOhm @ 25A, 10V | 2.1V @ 1mA | 33.9nC @ 5V | ±10V | 4483pF @ 25V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 60V 64A SO8FL |
23,718 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 10A (Ta), 64A (Tc) | 4.5V, 10V | 14mOhm @ 17A, 10V | 2.5V @ 250µA | 83nC @ 10V | ±20V | 4400pF @ 25V | - | 3.8W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 40V 55A POWERFLAT |
26,232 |
|
Automotive, AEC-Q101, STripFET™ F6 | N-Channel | MOSFET (Metal Oxide) | 40V | 55A (Tc) | 10V | 3.6mOhm @ 13A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 3700pF @ 25V | - | 96W (Tc) | 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET TO263-3 |
19,896 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | 4V @ 140µA | 13nC @ 10V | ±20V | 555pF @ 400V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CH 60V 270MA TO92-3 |
55,230 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 1mA | - | ±20V | 60pF @ 10V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 55V 49A D2PAK |
16,206 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 49A (Tc) | 10V | 17.5mOhm @ 25A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1470pF @ 25V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 47A D2PAK |
17,388 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 47A (Tc) | 4V, 10V | 22mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | 1700pF @ 25V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 100V 13A DPAK |
82,956 |
|
Automotive, AEC-Q101, HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 760pF @ 25V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 30V 60A 8VSON |
19,458 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 2.3mOhm @ 25A, 10V | 1.8V @ 250µA | 30nC @ 4.5V | ±20V | 4420pF @ 15V | - | 2.8W (Ta), 108W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET P-CH 60V 160MA TO92-3 |
89,238 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 160mA (Ta) | 10V | 14Ohm @ 200mA, 10V | 3.5V @ 1mA | - | ±20V | 50pF @ 18V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 100V 10A I-PAK |
75,006 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Tc) | 4V, 10V | 185mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | ±16V | 440pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
N-CHANNEL 600 V, 0.310 OHM TYP., |
93,636 |
|
MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 365mOhm @ 5.5A, 10V | 5V @ 250µA | 19nC @ 10V | ±25V | 730pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 100A 8TDSON |
42,924 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 7V, 10V | 1.7mOhm @ 50A, 10V | 3.4V @ 60µA | 83nC @ 10V | ±20V | 4810pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 250V 24.2A SO-8 |
99,090 |
|
ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 24.2A (Tc) | 7.5V, 10V | 63mOhm @ 10A, 10V | 4V @ 250µA | 30nC @ 7.5V | ±20V | 1405pF @ 125V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 80V TRENCH DPAK |
53,028 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 8A (Ta), 37A (Tc) | 6V, 10V | 23mOhm @ 8A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 1035pF @ 50V | - | 3.1W (Ta), 62W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 32A TDSON-8 |
38,280 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 32A (Ta), 100A (Tc) | 4.5V, 10V | 1.4mOhm @ 50A, 10V | 2V @ 250µA | 61nC @ 10V | ±20V | 4300pF @ 20V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSO8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 500V 7.6A DPAK |
22,182 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 7.6A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 32nC @ 10V | ±20V | 750pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-1 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Microchip Technology |
MOSFET N-CH 100V 730MA SOT89-3 |
19,398 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 730mA (Tj) | 3V, 10V | 1.5Ohm @ 750mA, 10V | 2V @ 1mA | - | ±20V | 125pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Vishay Siliconix |
MOSFET N-CH 150V 53.7A PPAK SO-8 |
24,036 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 53.7A (Tc) | 7.5V, 10V | 18mOhm @ 20A, 10V | 4.5V @ 250µA | 47nC @ 10V | ±20V | 1286pF @ 75V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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|
Nexperia |
MOSFET N-CH 100V 63A D2PAK |
101,004 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 63A (Tc) | 4.5V, 10V | 18.5mOhm @ 25A, 10V | 2V @ 1mA | 53.4nC @ 5V | ±15V | 5657pF @ 25V | - | 203W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 100V 28A ATPAK |
22,686 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 28A (Ta) | 10V | 75mOhm @ 14A, 10V | - | 73nC @ 10V | ±20V | 4000pF @ 20V | - | 70W (Tc) | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |