트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 890/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 30V 100A TO-220AB |
5,418 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 1V @ 250µA | 60nC @ 4.5V | ±16V | 3290pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 2A SOT-223 |
25,705 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 2A (Ta) | 4V, 10V | 140mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | ±16V | 230pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 55V 3.1A SOT-223 |
6,012 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 3.1A (Ta) | 4V, 10V | 65mOhm @ 3.1A, 10V | 2V @ 250µA | 15.6nC @ 5V | ±16V | 510pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 55V 10A DPAK |
7,902 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 10A (Tc) | 4.5V, 10V | 140mOhm @ 6A, 10V | 3V @ 250µA | 7.9nC @ 5V | ±16V | 265pF @ 25V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 10A DPAK |
88,549 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Tc) | 4V, 10V | 185mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | ±16V | 440pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 80V 30A DPAK |
6,102 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 30A (Tc) | 4.5V, 10V | 28mOhm @ 23A, 10V | 2.5V @ 250µA | 33nC @ 4.5V | ±16V | 1890pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 25A DPAK |
7,434 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 25A (Tc) | 5V, 10V | 37mOhm @ 15A, 10V | 3V @ 250µA | 20nC @ 5V | ±16V | 710pF @ 25V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 63A DPAK |
6,876 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 4.5V, 10V | 14mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | ±16V | 3980pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 42A DPAK |
6,912 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 42A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | 2.5V @ 100µA | 56nC @ 4.5V | ±16V | 3810pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 99A DPAK |
8,964 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 6.8mOhm @ 50A, 10V | 2.5V @ 100µA | 49nC @ 4.5V | ±16V | 3779pF @ 50V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 61A DPAK |
4,194 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 5V, 10V | 14mOhm @ 30A, 10V | 3V @ 250µA | 92nC @ 10V | ±16V | 1870pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 343A D2PAK |
3,528 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 4.5V, 10V | 1.7mOhm @ 195A, 10V | 2.5V @ 250µA | 162nC @ 4.5V | ±20V | 10315pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK-7P |
7,740 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 4.5V, 10V | 1.4mOhm @ 200A, 10V | 2.5V @ 250µA | 180nC @ 4.5V | ±20V | 10990pF @ 40V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Infineon Technologies |
MOSFET N-CH 60V 270A D2PAK |
4,446 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | ±16V | 11210pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 300A D2PAK-7P |
7,848 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 240A (Tc) | 4.5V, 10V | 1.9mOhm @ 180A, 10V | 2.5V @ 250µA | 160nC @ 4.5V | ±16V | 11270pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 40V 42A D2PAK |
6,066 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 56A (Tc) | 10V | 4.9mOhm @ 56A, 10V | 2.5V @ 100µA | 53nC @ 4.5V | ±16V | 3617pF @ 25V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 180A D2PAK |
6,030 |
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Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 4.5V, 10V | 4.3mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | ±16V | 11360pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 190A D2PAK-7P |
4,266 |
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Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 190A (Tc) | 4.5V, 10V | 3.9mOhm @ 110A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | ±16V | 11490pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 60V 270A TO262 |
7,758 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | ±16V | 11210pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 42A IPAK |
8,370 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4V, 10V | 27mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | 1700pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 100V 63A IPAK |
7,488 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | - | 14mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | - | 3980pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 51A TO-262 |
7,596 |
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- | - | - | - | - | 4.5V, 10V | - | - | - | ±16V | - | - | - | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 51A D2PAK |
7,902 |
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- | - | - | - | - | 4.5V, 10V | - | - | - | ±16V | - | - | - | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
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Infineon Technologies |
MOSFET N-CH 20V 4.2A 8SOIC |
6,750 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | - | 85mOhm @ 4A, 4.5V | 700mV @ 250µA | 7.5nC @ 4.5V | - | 310pF @ 15V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 59A TO-220AB |
3,798 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 59A (Tc) | 10V | 18mOhm @ 35A, 10V | 4V @ 250mA | 120nC @ 10V | ±20V | 2900pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 40V 75A TO220AB |
2,592 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 5.5mOhm @ 75A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 3000pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 20V 12A SC70-6L |
6,912 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 12A (Tc) | 1.5V, 4.5V | 15mOhm @ 12.4A, 4.5V | 1V @ 250µA | 35nC @ 8V | ±8V | 1380pF @ 1V | - | 3.5W (Ta), 19.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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ON Semiconductor |
MOSFET N-CH 600V 4.1A DPAK |
4,626 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4.1A (Tc) | 10V | 2Ohm @ 2A, 10V | 4.5V @ 50µA | 29nC @ 10V | ±30V | 640pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 11.3A DPAK |
8,478 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 11.3A (Ta), 79A (Tc) | 4.5V, 11.5V | 6mOhm @ 30A, 10V | 2.5V @ 250µA | 23nC @ 4.5V | ±20V | 2142pF @ 12V | - | 1.4W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 10.3A SGL DPAK |
4,194 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 10.3A (Ta), 54A (Tc) | 4.5V, 10V | 5.5mOhm @ 30A, 10V | 2.2V @ 250µA | 24nC @ 10V | ±20V | 1932pF @ 15V | - | 1.38W (Ta), 37.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |