트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 912/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Microsemi |
MOSFET N-CH 200V TO-205AF |
4,032 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 3.5A (Tc) | 10V | 800mOhm @ 2.25A, 10V | 4V @ 250µA | 14.3nC @ 10V | ±20V | - | - | 800mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
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Microsemi |
MOSFET N-CH 200V 18LCC |
2,142 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 2.8A (Tc) | 10V | 800mOhm @ 2.25A, 10V | 4V @ 250µA | 14.3nC @ 10V | ±20V | - | - | 800mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
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Microsemi |
MOSFET N-CH 100V TO-205AF TO-39 |
6,228 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 8A (Tc) | 10V | 180mOhm @ 5A, 10V | 4V @ 250mA | 6.34nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
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Microsemi |
MOSFET N-CH 100V 18LCC |
3,150 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 8A (Tc) | 10V | 180mOhm @ 5A, 10V | 4V @ 250mA | 6.34nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
|
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|
Microsemi |
MOSFET N-CH 200V TO-205AF TO-39 |
7,218 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 10V | 400mOhm @ 3.5A, 10V | 4V @ 250µA | 5.29nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
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Microsemi |
MOSFET N-CH 200V 18LCC |
3,078 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 10V | 400mOhm @ 3.5A, 10V | 4V @ 250µA | 5.29nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
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Microsemi |
MOSFET N-CH 400V TO-205AF TO-39 |
5,256 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 3A (Tc) | 10V | 1Ohm @ 2A, 10V | 4V @ 250µA | 5.75nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
|
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|
Microsemi |
MOSFET N-CH 400V 18LCC |
3,870 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 3A (Tc) | 10V | 1Ohm @ 2A, 10V | 4V @ 250µA | 5.75nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
|
|
|
Microsemi |
MOSFET N-CH 500V TO-205AF TO-39 |
7,866 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 1.5Ohm @ 1.5A, 10V | 4V @ 250µA | 4.46nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
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Microsemi |
MOSFET N-CH 500V 18LCC |
2,664 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 1.5Ohm @ 1.5A, 10V | 4V @ 250µA | 4.46nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
|
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|
Microsemi |
MOSFET P-CH 100V TO-205AF TO-39 |
3,173 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 6.5A (Tc) | 10V | 320mOhm @ 6.5A, 10V | 4V @ 250µA | 34.8nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
|
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Microsemi |
MOSFET P-CH 100V 18-LCC |
6,192 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 6.5A (Tc) | 10V | 300mOhm @ 4.1A, 10V | 4V @ 250µA | 34.8nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
|
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|
ON Semiconductor |
MOSFET P-CH 30V 8-SOIC |
8,388 |
|
Automotive, AEC-Q101, PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 8.8A (Ta) | 4.5V, 10V | 20mOhm @ 8.8A, 10V | 3V @ 250µA | 40nC @ 10V | ±25V | 1845pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 85A 8-DFN |
7,380 |
|
AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta), 85A (Tc) | 4.5V, 10V | 1.4mOhm @ 20A, 10V | 2.2V @ 250µA | 120nC @ 10V | ±20V | 5910pF @ 15V | - | 7.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 10A TO-220 |
8,730 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 700mOhm @ 5A, 10V | 5V @ 250µA | 35nC @ 10V | ±30V | 1346pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 10A TO220F |
7,722 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 700mOhm @ 5A, 10V | 5V @ 250µA | 35nC @ 10V | ±30V | 1346pF @ 100V | - | 43W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 12A TO263 |
3,888 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 650mOhm @ 6A, 10V | 4V @ 250µA | 50nC @ 10V | ±30V | 2010pF @ 25V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
Infineon Technologies |
MOSFET N-CH 30V 14A SQ |
5,454 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 60A (Tc) | 4.5V, 10V | 7.3mOhm @ 14A, 10V | 2.4V @ 25µA | 14nC @ 4.5V | ±20V | 1430pF @ 15V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 38A TO220 |
4,896 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 38A (Tc) | 10V | 99mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127nC @ 10V | ±20V | 2780pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 16.1A TO-252 |
5,958 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 16.1A (Tc) | 10V | 250mOhm @ 4.4A, 10V | 3.5V @ 400µA | 44nC @ 10V | ±20V | 950pF @ 100V | - | 208.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
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Infineon Technologies |
MOSFET N-CH 650V 38A TO-262 |
5,580 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 38A (Tc) | 10V | 99mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127nC @ 10V | ±20V | 2780pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 22.4A TO-262 |
5,634 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | ±20V | 2340pF @ 100V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 3.2A TO220 |
5,130 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 1.4Ohm @ 1.1A, 10V | 3.5V @ 90µA | 1.1nC @ 10V | ±20V | 200pF @ 100V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 38A TO220 |
5,148 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 38A (Tc) | 10V | 99mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 15nC @ 10V | ±20V | 2780pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 500V 3.1A TO-251 |
8,208 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 3.1A (Tc) | 13V | 1.4Ohm @ 900mA, 13V | 3.5V @ 70µA | 8.2nC @ 10V | ±20V | 178pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 500V 2.4A TO-251 |
3,492 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 2.4A (Tc) | 13V | 2Ohm @ 600mA, 13V | 3.5V @ 50µA | 6nC @ 10V | ±20V | 124pF @ 100V | - | 22W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 500V 1.7A TO-251 |
2,070 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 1.7A (Tc) | 13V | 3Ohm @ 400mA, 13V | 3.5V @ 30µA | 4.3nC @ 10V | ±20V | 84pF @ 100V | - | 18W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 2.4A TO-251 |
4,770 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 2.4A (Tc) | 10V | 2Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7nC @ 10V | ±20V | 140pF @ 100V | - | 22.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 4.4A TO-251 |
7,704 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 130µA | 1.5nC @ 10V | ±20V | 280pF @ 100V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
IXYS |
MOSFET N-CH 60V 12A TO-252 |
4,086 |
|
TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 60V | 12A (Tc) | 10V | 85mOhm @ 6A, 10V | 4V @ 25µA | 3.4nC @ 10V | ±20V | 256pF @ 25V | - | 33W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |