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트랜지스터-FET, MOSFET-단일

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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 927/999
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
FET 유형
기술
드레인-소스 전압 (Vdss)
전류-25 ° C에서 연속 드레인 (Id)
드라이브 전압 (최대 Rds On, 최소 Rds On)
Rds On (최대) @ Id, Vgs
Vgs (th) (최대) @ Id
게이트 충전 (Qg) (최대) @ Vgs
Vgs (최대)
입력 커패시턴스 (Ciss) (최대) @ Vds
FET 기능
전력 손실 (최대)
작동 온도
장착 유형
공급자 장치 패키지
패키지 / 케이스
GP1M005A050FH
Global Power Technologies Group
MOSFET N-CH 500V 4.5A TO220F
2,754
-
N-Channel
MOSFET (Metal Oxide)
500V
4.5A (Tc)
10V
1.65Ohm @ 2.25A, 10V
4V @ 250µA
11nC @ 10V
±30V
627pF @ 25V
-
32W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP1M005A050H
Global Power Technologies Group
MOSFET N-CH 500V 4.5A TO220
4,014
-
N-Channel
MOSFET (Metal Oxide)
500V
4.5A (Tc)
10V
1.65Ohm @ 2.25A, 10V
4V @ 250µA
11nC @ 10V
±30V
627pF @ 25V
-
92.5W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GP1M005A050PH
Global Power Technologies Group
MOSFET N-CH 500V 4.5A IPAK
3,960
-
N-Channel
MOSFET (Metal Oxide)
500V
4.5A (Tc)
10V
1.65Ohm @ 2.25A, 10V
4V @ 250µA
11nC @ 10V
±30V
627pF @ 25V
-
92.5W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
I-PAK
TO-251-3 Short Leads, IPak, TO-251AA
GP1M006A065CH
Global Power Technologies Group
MOSFET N-CH 650V 5.5A DPAK
8,604
-
N-Channel
MOSFET (Metal Oxide)
650V
5.5A (Tc)
10V
1.6Ohm @ 2.75A, 10V
4V @ 250µA
17nC @ 10V
±30V
1177pF @ 25V
-
120W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
GP1M006A065F
Global Power Technologies Group
MOSFET N-CH 650V 5.5A TO220F
5,490
-
N-Channel
MOSFET (Metal Oxide)
650V
5.5A (Tc)
10V
1.6Ohm @ 2.75A, 10V
4V @ 250µA
17nC @ 10V
±30V
1177pF @ 25V
-
39W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP1M006A065PH
Global Power Technologies Group
MOSFET N-CH 650V 5.5A IPAK
5,706
-
N-Channel
MOSFET (Metal Oxide)
650V
5.5A (Tc)
10V
1.6Ohm @ 2.75A, 10V
4V @ 250µA
17nC @ 10V
±30V
1177pF @ 25V
-
120W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
I-PAK
TO-251-3 Short Leads, IPak, TO-251AA
GP1M006A070F
Global Power Technologies Group
MOSFET N-CH 700V 5A TO220F
6,426
-
N-Channel
MOSFET (Metal Oxide)
700V
5A (Tc)
10V
1.65Ohm @ 2.5A, 10V
4V @ 250µA
23nC @ 10V
±30V
1500pF @ 25V
-
39W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP1M008A025CG
Global Power Technologies Group
MOSFET N-CH 250V 8A DPAK
2,430
-
N-Channel
MOSFET (Metal Oxide)
250V
8A (Tc)
10V
600mOhm @ 4A, 10V
5V @ 250µA
8.4nC @ 10V
±30V
423pF @ 25V
-
52W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
GP1M008A025FG
Global Power Technologies Group
MOSFET N-CH 250V 8A TO220F
4,446
-
N-Channel
MOSFET (Metal Oxide)
250V
8A (Tc)
10V
600mOhm @ 4A, 10V
5V @ 250µA
8.4nC @ 10V
±30V
423pF @ 25V
-
17.3W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP1M008A025HG
Global Power Technologies Group
MOSFET N-CH 250V 8A TO220
6,642
-
N-Channel
MOSFET (Metal Oxide)
250V
8A (Tc)
10V
600mOhm @ 4A, 10V
5V @ 250µA
8.4nC @ 10V
±30V
423pF @ 25V
-
52W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GP1M008A050PG
Global Power Technologies Group
MOSFET N-CH 500V 8A IPAK
3,888
-
N-Channel
MOSFET (Metal Oxide)
500V
8A (Tc)
10V
850mOhm @ 4A, 10V
5V @ 250µA
21nC @ 10V
±30V
937pF @ 25V
-
120W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
I-PAK
TO-251-3 Short Leads, IPak, TO-251AA
GP1M008A080FH
Global Power Technologies Group
MOSFET N-CH 800V 8A TO220F
4,824
-
N-Channel
MOSFET (Metal Oxide)
800V
8A (Tc)
10V
1.4Ohm @ 4A, 10V
4V @ 250µA
46nC @ 10V
±30V
1921pF @ 25V
-
40.3W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP1M009A020CG
Global Power Technologies Group
MOSFET N-CH 200V 9A DPAK
3,258
-
N-Channel
MOSFET (Metal Oxide)
200V
9A (Tc)
10V
400mOhm @ 4.5A, 10V
5V @ 250µA
8.6nC @ 10V
±30V
414pF @ 25V
-
52W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
GP1M009A020HG
Global Power Technologies Group
MOSFET N-CH 200V 9A TO220
5,868
-
N-Channel
MOSFET (Metal Oxide)
200V
9A (Tc)
10V
400mOhm @ 4.5A, 10V
5V @ 250µA
8.6nC @ 10V
±30V
414pF @ 25V
-
52W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GP1M009A020PG
Global Power Technologies Group
MOSFET N-CH 200V 9A IPAK
3,726
-
N-Channel
MOSFET (Metal Oxide)
200V
9A (Tc)
10V
400mOhm @ 4.5A, 10V
5V @ 250µA
8.6nC @ 10V
±30V
414pF @ 25V
-
52W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
I-PAK
TO-251-3 Short Leads, IPak, TO-251AA
GP1M009A050FSH
Global Power Technologies Group
MOSFET N-CH 500V 8.5A TO220F
6,480
-
N-Channel
MOSFET (Metal Oxide)
500V
8.5A (Tc)
10V
850mOhm @ 4.25A, 10V
4V @ 250µA
24nC @ 10V
±30V
1195pF @ 25V
-
39W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP1M009A050HS
Global Power Technologies Group
MOSFET N-CH 500V 8.5A TO220
4,140
-
N-Channel
MOSFET (Metal Oxide)
500V
8.5A (Tc)
10V
850mOhm @ 4.25A, 10V
4V @ 250µA
24nC @ 10V
±30V
1195pF @ 25V
-
127W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GP1M009A060FH
Global Power Technologies Group
MOSFET N-CH 600V 9A TO220F
4,914
-
N-Channel
MOSFET (Metal Oxide)
600V
9A (Tc)
10V
1Ohm @ 4.5A, 10V
4V @ 250µA
27nC @ 10V
±30V
1440pF @ 25V
-
51.4W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP1M009A070F
Global Power Technologies Group
MOSFET N-CH 700V 9A TO220F
6,408
-
N-Channel
MOSFET (Metal Oxide)
700V
9A (Tc)
10V
1.05Ohm @ 4.5A, 10V
4V @ 250µA
30nC @ 10V
±30V
1944pF @ 25V
-
52W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP1M009A090H
Global Power Technologies Group
MOSFET N-CH 900V 9A TO220
6,012
-
N-Channel
MOSFET (Metal Oxide)
900V
9A (Tc)
10V
1.4Ohm @ 4.5A, 10V
4V @ 250µA
65nC @ 10V
±30V
2324pF @ 25V
-
290W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GP1M010A060FH
Global Power Technologies Group
MOSFET N-CH 600V 10A TO220F
3,024
-
N-Channel
MOSFET (Metal Oxide)
600V
10A (Tc)
10V
750mOhm @ 5A, 10V
4V @ 250µA
36nC @ 10V
±30V
1891pF @ 25V
-
52W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP1M010A080N
Global Power Technologies Group
MOSFET N-CH 900V 10A TO3PN
6,912
-
N-Channel
MOSFET (Metal Oxide)
900V
10A (Tc)
10V
1.05Ohm @ 5A, 10V
4V @ 250µA
53nC @ 10V
±30V
2336pF @ 25V
-
312W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
GP1M011A050FSH
Global Power Technologies Group
MOSFET N-CH 500V 10A TO220F
8,514
-
N-Channel
MOSFET (Metal Oxide)
500V
10A (Tc)
10V
700mOhm @ 5A, 10V
3.5V @ 250µA
28nC @ 10V
±30V
1546pF @ 25V
-
51.4W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP1M011A050HS
Global Power Technologies Group
MOSFET N-CH 500V 10A TO220
4,860
-
N-Channel
MOSFET (Metal Oxide)
500V
10A (Tc)
10V
700mOhm @ 5A, 10V
3.5V @ 250µA
28nC @ 10V
±30V
1546pF @ 25V
-
158W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GP1M012A060FH
Global Power Technologies Group
MOSFET N-CH 600V 12A TO220F
7,776
-
N-Channel
MOSFET (Metal Oxide)
600V
12A (Tc)
10V
650mOhm @ 6A, 10V
4V @ 250µA
39nC @ 10V
±30V
2308pF @ 25V
-
53W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP1M013A050FH
Global Power Technologies Group
MOSFET N-CH 500V 13A TO220F
4,482
-
N-Channel
MOSFET (Metal Oxide)
500V
13A (Tc)
10V
480mOhm @ 6.5A, 10V
4V @ 250µA
36nC @ 10V
±30V
1918pF @ 25V
-
52W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP1M015A050H
Global Power Technologies Group
MOSFET N-CH 500V 14A TO220
7,146
-
N-Channel
MOSFET (Metal Oxide)
500V
14A (Tc)
10V
440mOhm @ 7A, 10V
4V @ 250µA
39nC @ 10V
±30V
2263pF @ 25V
-
231W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GP1M016A025PG
Global Power Technologies Group
MOSFET N-CH 250V 16A IPAK
3,960
-
N-Channel
MOSFET (Metal Oxide)
250V
16A (Tc)
10V
240mOhm @ 8A, 10V
5V @ 250µA
19nC @ 10V
±30V
944pF @ 25V
-
93.9W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
I-PAK
TO-251-3 Short Leads, IPak, TO-251AA
GP1M016A060FH
Global Power Technologies Group
MOSFET N-CH 600V 16A TO220F
6,768
-
N-Channel
MOSFET (Metal Oxide)
600V
16A (Tc)
10V
470mOhm @ 8A, 10V
4V @ 250µA
53nC @ 10V
±30V
3039pF @ 25V
-
48W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GP1M018A020CG
Global Power Technologies Group
MOSFET N-CH 200V 18A DPAK
2,988
-
N-Channel
MOSFET (Metal Oxide)
200V
18A (Tc)
10V
170mOhm @ 9A, 10V
5V @ 250µA
18nC @ 10V
±30V
950pF @ 25V
-
94W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63