트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 95/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 100V 97A D2PAK |
16,644 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 97A (Tc) | 10V | 9mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | ±20V | 4820pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 62A TO-220AB |
212,400 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 62A (Tc) | 2.8V, 10V | 12mOhm @ 15A, 10V | 2V @ 250µA | 24nC @ 4.5V | ±12V | 2417pF @ 15V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 40V 120A TO220 |
21,576 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 6V, 10V | 2.5mOhm @ 100A, 10V | 3.9V @ 100µA | 135nC @ 10V | ±20V | 4730pF @ 25V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 10A D2PAK |
16,110 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 4.5A, 10V | 4.5V @ 250µA | 70nC @ 10V | ±30V | 1370pF @ 25V | - | 115W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
N-CHANNEL 800 V, 1.50 OHM TYP., |
116,070 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.75Ohm @ 2A, 10V | 5V @ 100µA | 5nC @ 10V | ±30V | 177pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 200V 19A TO-220 |
16,896 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 19A (Tc) | 10V | 170mOhm @ 9.5A, 10V | 4V @ 250µA | 53nC @ 10V | ±30V | 1080pF @ 25V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 4A TO-220 |
12,312 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2Ohm @ 2A, 10V | 4.5V @ 50µA | 26nC @ 10V | ±30V | 510pF @ 25V | - | 70W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 75V 80A TO-220FP |
29,658 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 11mOhm @ 40A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 3700pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Nexperia |
MOSFET N-CH 30V 100A TO220AB |
27,864 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2.1mOhm @ 15A, 10V | 2.15V @ 1mA | 117nC @ 10V | ±20V | 6810pF @ 12V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 10A TO-220AB |
15,624 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1400pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 1000V 1.4A TO-220AB |
19,248 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 1.4A (Tc) | 10V | 11Ohm @ 840mA, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 500pF @ 25V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 42A TO-220AB |
16,788 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 36mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 1900pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 12A TO-220AB |
12,570 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 12A (Tc) | 10V | 300mOhm @ 7.2A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 860pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 10A DPAK |
25,218 |
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FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 450mOhm @ 5A, 10V | 5V @ 250µA | 30nC @ 10V | ±25V | 850pF @ 50V | - | 90W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 100V 120A D2PAK |
62,652 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 5mOhm @ 25A, 10V | 4V @ 1mA | 180nC @ 10V | ±20V | 11810pF @ 25V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 100V 120A D2PAK |
17,514 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 5V | 5.8mOhm @ 25A, 5V | 2.1V @ 1mA | 133nC @ 5V | ±10V | 17460pF @ 25V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 60V 17A TO-220F |
21,828 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 10V | 70mOhm @ 8.5A, 10V | 4V @ 250µA | 43nC @ 10V | ±25V | 1400pF @ 25V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB |
17,772 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | 3V @ 250µA | 60nC @ 5V | ±16V | 2880pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 97A TO-220AB |
23,760 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 97A (Tc) | 10V | 9mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | ±20V | 4820pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 59A TO-220AB |
16,458 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 59A (Tc) | 10V | 18mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 2900pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 6A TO220SIS |
17,220 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Ta) | 10V | 1.25Ohm @ 3A, 10V | 4V @ 1mA | 16nC @ 10V | ±30V | 800pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET P-CH 60V 18A D2PAK |
20,484 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 10V | 140mOhm @ 11A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 1100pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 52.4A TO-220 |
20,364 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 52.4A (Tc) | 5V, 10V | 21mOhm @ 26.2A, 10V | 2.5V @ 250µA | 32nC @ 5V | ±20V | 1630pF @ 25V | - | 121W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 180A TO-220AB |
51,630 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 4340pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 30A TO-220AB |
27,846 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 50mOhm @ 18A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 1200pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 800V 3A TO-220 |
15,228 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 3.5Ohm @ 1.5A, 10V | 4.5V @ 50µA | 22.5nC @ 10V | ±30V | 575pF @ 25V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 40V 195A TO220 |
13,146 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | ±20V | 7330pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 50A TO-220 |
12,978 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 22mOhm @ 25A, 10V | 4V @ 250µA | 41nC @ 10V | ±25V | 1540pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 50A TO-220AB |
13,824 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 22mOhm @ 50A, 10V | 4V @ 250µA | 150nC @ 20V | ±20V | 2020pF @ 25V | - | 131W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 19A TO-220AB |
23,100 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 19A (Tc) | 10V | 200mOhm @ 11A, 10V | 4V @ 250µA | 61nC @ 10V | ±20V | 1400pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |