트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 988/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
MOSFET N-CH 60V SOT23 |
4,572 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET N-CH 60V SOT23-3 |
6,390 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET N-CH 60V SOT523 |
6,894 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET N-CH 60V SOT523 |
7,812 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET N-CH SOT23 |
2,682 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET P-CH DFN-3 |
4,338 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET N-CH SOT23 |
3,544 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET N-CH SOT23 |
4,194 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET N-CH SOT23 |
4,680 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET N-CH SOT23 |
7,956 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET N-CH POWERDI3333-8 |
견적 요청 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 19A DPAK |
3,708 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 19A (Tc) | 4.5V, 10V | 74mOhm @ 19A, 10V | 2.2V @ 250µA | 40nC @ 10V | ±20V | 1nF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK (SINGLE GAUGE) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 25A DPAK |
3,636 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 25A (Tc) | 4.5V, 10V | 50mOhm @ 10A, 10V | 2V @ 250µA | 35nC @ 10V | ±20V | 1.024nF @ 25V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK (SINGLE GAUGE) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL |
4,698 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 2.5V, 4.5V | 55mOhm @ 4A, 4.5V | 1.4V @ 250µA | 9nC @ 4.5V | ±8V | 640pF @ 6V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
4,932 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4V @ 250µA | 45.8nC @ 10V | ±30V | 1738pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
4,644 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4V @ 250µA | 45.8nC @ 10V | ±30V | 1738pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
3,580 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4V @ 250µA | 45.8nC @ 10V | ±30V | 1738pF @ 25V | - | 166W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
7,542 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4V @ 250µA | 45.8nC @ 10V | ±30V | 1738pF @ 25V | - | 166W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL |
7,650 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 22A (Tc) | 4.5V, 10V | 140mOhm @ 20A, 10V | 3V @ 250µA | 42nC @ 10V | ±25V | 2250pF @ 30V | - | 48W (Tc) | 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL |
2,322 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 22A (Tc) | 4.5V, 10V | 140mOhm @ 20A, 10V | 3V @ 250µA | 42nC @ 10V | ±25V | 2250pF @ 30V | - | 125W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
4,770 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | 2.5V @ 250µA | 28nC @ 10V | ±20V | 1680pF @ 25V | - | 42W (Tc) | 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
4,284 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | 2.5V @ 250µA | 28nC @ 10V | ±20V | 1680pF @ 25V | - | 104W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
3,454 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4.5V, 10V | 34mOhm @ 15A, 10V | 2.5V @ 250µA | 16.6nC @ 10V | ±20V | 1180pF @ 30V | - | 27W (Tc) | 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
5,544 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4.5V, 10V | 34mOhm @ 15A, 10V | 2.5V @ 250µA | 16.6nC @ 10V | ±20V | 1180pF @ 30V | - | 66W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL |
2,808 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4.5V, 10V | 48mOhm @ 8A, 10V | 2.2V @ 250µA | 22.4nC @ 10V | ±20V | 1250pF @ 30V | - | 27W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL |
8,262 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4.5V, 10V | 48mOhm @ 8A, 10V | 2.2V @ 250µA | 22.4nC @ 10V | ±20V | 1250pF @ 30V | - | 66W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL |
3,526 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 4.5V, 10V | 68mOhm @ 6A, 10V | 2.2V @ 250µA | 16.4nC @ 10V | ±20V | 870pF @ 30V | - | 17W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL |
4,734 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 4.5V, 10V | 68mOhm @ 6A, 10V | 2.2V @ 250µA | 16.4nC @ 10V | ±20V | 870pF @ 30V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Micro Commercial Co |
TRANS NPN TO-92 |
2,790 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA | 10V | 5Ohm @ 500mA, 10V | 3V @ 1mA | - | ±20V | 60pF @ 25V | - | 625mW (Ta) | -55°C ~ 150°C | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
Infineon Technologies |
MOSFET N-CH D2PAK |
5,382 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |