Taiwan Semiconductor Corporation 정류기-싱글

시리즈

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다이오드 유형

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전압-DC 역방향 (Vr) (최대)

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전류-평균 정류 (Io)

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전압-순방향 (Vf) (최대) @ If

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속도

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역 복구 시간 (trr)

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전류-역방향 누설 @ Vr

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커패시턴스 @ Vr, F

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장착 유형

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패키지 / 케이스

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공급자 장치 패키지

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작동 온도-접합

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필터보기

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필터 적용

카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글

제조업체Taiwan Semiconductor Corporation

기록 5,388

페이지 102/180

부품 번호	제조업체	설명	재고 있음	시리즈	다이오드 유형	전압-DC 역방향 (Vr) (최대)	전류-평균 정류 (Io)	전압-순방향 (Vf) (최대) @ If	속도	역 복구 시간 (trr)	전류-역방향 누설 @ Vr	커패시턴스 @ Vr, F	장착 유형	패키지 / 케이스	공급자 장치 패키지	작동 온도-접합
SRAS20150 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 20A TO263AB	5,238	-	Schottky	150V	20A	1.02V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRA20150 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 20A TO220AC	8,406	-	Schottky	150V	20A	1.02V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SF2004PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 20A TO247AD	5,436	-	Standard	200V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2005PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 20A TO247AD	4,068	-	Standard	300V	20A	1.5V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2006PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 20A TO247AD	3,744	-	Standard	400V	20A	1.5V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2008PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 20A TO247AD	6,552	-	Standard	600V	20A	1.9V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF1606PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 16A TO247AD	5,922	-	Standard	400V	16A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	85pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SRAS20150HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 20A TO263AB	2,592	Automotive, AEC-Q101	Schottky	150V	20A	1.02V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SF2001PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 20A TO247AD	7,146	Automotive, AEC-Q101	Standard	50V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2002PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 20A TO247AD	5,040	Automotive, AEC-Q101	Standard	100V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2003PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 20A TO247AD	6,948	Automotive, AEC-Q101	Standard	150V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2004PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 20A TO247AD	4,968	Automotive, AEC-Q101	Standard	200V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2005PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 20A TO247AD	3,078	Automotive, AEC-Q101	Standard	300V	20A	1.5V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2006PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 20A TO247AD	4,302	Automotive, AEC-Q101	Standard	400V	20A	1.5V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2007PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 20A TO247AD	3,436	Automotive, AEC-Q101	Standard	500V	20A	1.9V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2008PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 20A TO247AD	7,740	Automotive, AEC-Q101	Standard	600V	20A	1.9V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
UGA15120 C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 15A TO220AC	3,024	-	Standard	-	15A	2.9V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	5µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
UGA15120HC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 15A TO220AC	5,760	Automotive, AEC-Q101	Standard	-	15A	2.9V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	5µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SF3006PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 30A TO247AD	5,724	-	Standard	400V	30A	1.3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF3008PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 30A TO247AD	8,892	Automotive, AEC-Q101	Standard	600V	30A	1.7V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
BAS85 L1G	Taiwan Semiconductor Corporation	DIODE SCHTKY 30V 200MA MINI MELF	2,682	-	Schottky	30V	200mA	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 30V	10pF @ 1V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	125°C (Max)
ES1JF R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SMA-FL	4,086	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMA-FL	-55°C ~ 150°C
S1MFL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A SOD123FL	6,786	-	Standard	1000V	1A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 1000V	7pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
LL4001G L0	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A MELF	4,212	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
LL4002G L0	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A MELF	5,490	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
LL4003G L0	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A MELF	4,014	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
LL4005G L0	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A MELF	6,606	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
LL4006G L0	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A MELF	4,500	-	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
LL4007G L0	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A MELF	3,996	-	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
1N4001G R1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	4,032	-	Standard	50V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C

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