Taiwan Semiconductor Corporation 정류기-싱글
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필터보기
필터 재설정
필터 적용
카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
제조업체Taiwan Semiconductor Corporation
기록 5,388
페이지 23/180
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AA |
2,844 |
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- | Standard | 200V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 200V | 46pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO214AB |
2,250 |
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- | Standard | 400V | 3A | 1.15V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 400V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 5A DO214AA |
5,472 |
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- | Schottky | 60V | 5A | 750mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 3A DO201AD |
2,628 |
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- | Schottky | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 3A DO214AB |
6,120 |
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- | Standard | 800V | 3A | 1.15V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 800V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 8A DO214AB |
3,580 |
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- | Standard | 1000V | 8A | 985mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 48pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 8A DO214AB |
8,208 |
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- | Standard | 800V | 8A | 985mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 800V | 48pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 8A DO214AB |
3,330 |
|
- | Standard | 1000V | 8A | 985mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 1000V | 48pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 5A 40V DO-214AB |
4,806 |
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- | Schottky | 40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO214AA |
2,034 |
|
- | Standard | 600V | 3A | 1.45V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 34pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO201AD |
2,808 |
|
- | Standard | 400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 60pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO214AB |
6,192 |
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- | Standard | 600V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 3A DO214AB |
4,536 |
|
- | Standard | 100V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 3A DO214AA |
3,042 |
|
- | Schottky | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 3A DO214AB |
8,424 |
|
- | Schottky | 60V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 10A DO214AB |
5,310 |
|
- | Standard | 400V | 10A | 1.1V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 400V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO214AB |
8,910 |
|
- | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 4A DO214AB |
5,202 |
|
- | Standard | 600V | 4A | 1.25V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 65pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 12A DO214AB |
5,706 |
|
- | Standard | 800V | 12A | 1.1V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 800V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 12A DO214AB |
3,384 |
|
- | Standard | 800V | 12A | 1.1V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 800V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 12A DO214AB |
2,466 |
|
- | Standard | 600V | 12A | 1.1V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 600V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 3A DO214AB |
8,640 |
|
- | Standard | 100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 6A TO277A |
8,370 |
|
- | Standard | 400V | 6A | 1.2V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 60pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 3A 200V DO-214AB |
8,550 |
|
- | Schottky | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 4A DO214AB |
3,114 |
|
- | Standard | 600V | 4A | 1.25V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 65pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 4A DO214AB |
2,592 |
|
- | Standard | 400V | 4A | 1.25V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 65pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 4A DO214AB |
5,940 |
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- | Standard | 200V | 4A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 65pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 15A DO214AB |
4,968 |
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- | Standard | 400V | 15A | 1.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 400V | 93pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 10A DO214AB |
4,086 |
|
- | Standard | 800V | 10A | 1.1V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 800V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 12A DO214AB |
2,124 |
|
- | Standard | 400V | 12A | 1.1V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 400V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |