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Taiwan Semiconductor Corporation 정류기-싱글

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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
제조업체Taiwan Semiconductor Corporation
기록 5,388
페이지 3/180
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
TSPB20U80S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 80V 20A SMPC4.0
15,648
-
Schottky
80V
20A
640mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 80V
-
Surface Mount
TO-277, 3-PowerDFN
SMPC4.0
-55°C ~ 150°C
TSSA5U50 E3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 5A DO214AC
46,212
-
Schottky
50V
5A
540mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 50V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
TSSA5U60 E3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 5A DO214AC
145,260
-
Schottky
60V
5A
560mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 60V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
739,926
-
Standard
75V
150mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
5µA @ 75V
4pF @ 0V, 1MHz
Surface Mount
SC-90, SOD-323F
SOD-323F
-65°C ~ 150°C
BAV21W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD123
21,894
-
Standard
250V
200mA
1.25V @ 200mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 200V
5pF @ 0V, 1MHz
Surface Mount
SOD-123F
SOD-123F
-65°C ~ 150°C
BAT54 RFG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOT23
24,906
-
Schottky
30V
200mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-55°C ~ 125°C
BAS70 RFG
Taiwan Semiconductor Corporation
DIODE GEN PURP 70V 70MA SOT-23
23,376
-
Standard
70V
70mA (DC)
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
5ns
100nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-55°C ~ 125°C
1N4005G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
232,836
-
Standard
600V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4007G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1A DO204AL
141,780
-
Standard
1000V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
FR104G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
27,378
-
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
S1GLWHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SOD123W
228,468
-
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 400V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 175°C
S1DLW RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SOD123W
118,404
-
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 200V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 175°C
S1GLW RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SOD123W
95,940
-
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 400V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 175°C
S1MLS RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1.2A SOD123HE
80,028
-
Standard
1000V
1.2A
1.3V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 1000V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
S1MLW RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1A SOD123W
99,096
-
Standard
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 1000V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 175°C
S1JLSHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.2A SOD123
42,204
-
Standard
600V
1.2A
1.3V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 600V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
S1JLW RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SOD123W
26,046
-
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 600V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 175°C
S15DLWHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A SOD123W
99,378
-
Standard
200V
1.5A
1.1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD123W
-55°C ~ 175°C
S15GLWHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1.5A SOD123W
118,506
-
Standard
400V
1.5A
1.1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD123W
-55°C ~ 175°C
RS1KL RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 800MA SUBSMA
315,906
-
Standard
800V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
S1B R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO214AC
112,596
-
Standard
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
1µA @ 100V
12pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C
S1MLHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1A SUB SMA
56,088
-
Standard
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 1000V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1AL RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
29,364
-
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 50V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
RS1GLW RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SOD123W
207,420
-
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 175°C
RS1JLW RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SOD123W
70,452
-
Standard
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 600V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 175°C
RS1MLW RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1A SOD123W
49,026
-
Standard
1000V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 1000V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 175°C
RSFJL RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 500MA SUBSMA
105,642
-
Standard
600V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFKL RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 500MA SUBSMA
81,216
-
Standard
800V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFML RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 500MA SUB SMA
25,254
-
Standard
1000V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1GLWHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SOD123W
622,182
-
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 175°C